NIKO-SEM P2103HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30 21mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current Pulsed Drain Current 7 ID TC = 70 °C 1 6 IDM TC = 25 °C Power Dissipation 40 2 PD TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) A W 1.3 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL MAXIMUM UNITS 62.5 °C / W RθJA 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage 1.5 3 ±100 nA VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 1 V µA Jun-29-2004 NIKO-SEM P2103HVG Dual N-Channel Enhancement Mode Field Effect Transistor On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 VDS = 5V, VGS = 10V SOP-8 Lead-Free 25 A VGS = 4.5V, ID = 6A 21 35 VGS = 10V, ID = 7A 15 21 VDS = 15V, ID = 5A 24 gfs mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 170 Qg 18 Total Gate Charge 2 Gate-Source Charge2 Gate-Drain Charge 2 Turn-On Delay Time 2 Rise Time2 Turn-Off Delay Time 2 Fall Time2 1650 VGS = 0V, VDS = 15V, f = 1MHz pF 365 Qgs VDS = 0.5V(BR)DSS, VGS = 5V, 5.5 Qgd ID = 7A 6.7 td(on) 25 nC 11 20 tr VDS = 15V 9 18 td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 25 40 11 20 tf nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 1.3 Pulsed Current ISM 2.5 Forward Voltage1 VSD IF = 1A, VGS = 0V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / µS Reverse Recovery Charge Qrr 3 1.2 15.5 A V nS 7.9 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 2 REMARK: THE PRODUCT MARKED WITH “P2103HVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2103HVG SOP-8 Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS 3 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor 4 P2103HVG SOP-8 Lead-Free Jun-29-2004 NIKO-SEM P2103HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA Dimension mm Min. Typ. Max. A 4.8 4.9 5.0 B 3.8 3.9 C 5.8 D 0.38 Dimension Min. Typ. Max. H 0.5 0.715 0.83 4.0 I 0.18 0.254 0.25 6.0 6.2 J 0.445 0.51 K 1.27 E mm 0.22 0° 4° 8° L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N J F D E I G B H K C A 5 Jun-29-2004