P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS ±30 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current Pulsed Drain Current 7 ID TC = 70 °C 1 6 IDM TC = 25 °C Power Dissipation 40 2 PD TC = 70 °C A W 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 1 TL 275 Lead Temperature ( /16” from case for 10 sec.) °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL MAXIMUM UNITS 62.5 °C / W RθJA 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 VGS(th) VDS = VGS, ID = 250µA 0.7 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS On-State Drain Current1 ID(ON) Gate Threshold Voltage 1 1.4 ±100 nA VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 VDS = 5V, VGS = 10V 1 V 25 µA A OCT-14-2002 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Drain-Source On-State Resistance1 Forward Transconductance RDS(ON) 1 gfs P07D03LV SOP-8 VGS = 2.5V, ID = 5A 40 48 VGS = 4.5V, ID = 6A 23 30 VGS = 10V, ID = 7A 18 25 VDS = 15V, ID = 5A 16 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 80 Total Gate Charge2 Qg 9 Gate-Source Charge 2 Gate-Drain Charge2 Turn-On Delay Time 2 Rise Time2 Turn-Off Delay Time 2 Fall Time2 830 VGS = 0V, VDS = 15V, f = 1MHz Qgs VDS = 0.5V(BR)DSS, VGS = 5V, 2.8 Qgd ID = 7A 3.1 td(on) pF 185 13 nC 5.7 tr VDS = 15V 10 td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 18 tf nS 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 3 Pulsed Current3 ISM 6 Forward Voltage1 VSD IF = 1A, VGS = 0V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / µS Reverse Recovery Charge Qrr 1 A V 15.5 nS 7.9 nC 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 2 REMARK: THE PRODUCT MARKED WITH “P07D03LV”, DATE CODE or LOT # 2 OCT-14-2002 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P07D03LV SOP-8 TYPICAL PERFORMANCE CHARACTERISTICS 3 OCT-14-2002 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor 4 P07D03LV SOP-8 OCT-14-2002 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P07D03LV SOP-8 SOIC-8 (D) MECHANICAL DATA Dimension mm Min. Typ. Max. A 4.8 4.9 5.0 B 3.8 3.9 C 5.8 D 0.38 E Dimension mm Min. Typ. Max. H 0.5 0.715 0.83 4.0 I 0.18 0.254 0.25 6.0 6.2 J 0.445 0.51 K 1.27 0.22 0° 4° 8° L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N 5 OCT-14-2002