IXYS DSEI20-12A

DSEI 20-12A
IFAVM =
Fast Recovery Epitaxial Diode
(FRED)
VRSM
VRRM
Type
1200V
1200V
DSEI 20-12A
VRRM = 1200 V
trr
=
40 ns
C
A
TO-220 AC
Symbol
Test Conditions
IFRMS
IFAVM ①
IFRM
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
70
17
220
A
A
A
IFSM
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
130
140
A
A
TVJ = 150°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
110
120
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
80
A2s
A2 s
TVJ = 150°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
60
60
A2s
A2 s
-40...+150
150
-40...+150
°C
°C
°C
78
W
∫i2dt
17 A
Maximum Ratings
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
C
C
A
A = Anode
C = Cathode
Features
Low IRM-values
Planar passivated chips
Very short recovery time
Soft recovery behaviour
Epoxy meet UL 94V-0.
Extremely low switching losses
International standard package
JEDEC TO-220 AC
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Weight
2
g
Applications
Snubber diode
Anti saturation diode
Inductive heating and melting
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Antiparallel diode for high frequency
switching devices
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
●
Symbol
Test Conditions
Characteristic Values
Typ.
Max.
VR = VRRM
VR = 0.8 V RRM
VR = 0.8 V RRM
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
750
250
7
µA
µA
mA
VF
IF
TVJ = 150°C
TVJ = 25°C
1.87
2.15
V
V
V T0
rT
For power-loss calculations only
T VJ = T VJM
1.65
18.2
V
mΩ
IR
= 12 A
RthJC
RthCK
RthJA
IF
= 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C
I RM
VR = 540 V; I F = 20 A; -diF/dt = 100 A/µs
L ≤ 0.05 µH
TVJ = 100°C
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0.5
trr
●
40
7
1.6 K/W
K/W
60 K/W
60
ns
A
●
Advantages
Low losses
Low noise switching
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Operating at lower temperature or
space saving by reduced cooling
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① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to DIN/IEC 747
©1996 IXYS Corporation. All rights reserved.
96501 (7/96)
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
DSEI 20-12A
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF /dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di F /dt.
Fig. 6 Peak forward voltage versus
-diF /dt.
Dim.
Dimensions
miniBLOC SOT-227 B
M4 screws (4x) supplied
Fig. 7 Transient thermal impedance junction to case.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Millimeter
Min. Max.
31.5
7.8
4.0
4.1
4.1
14.9
30.1
38.0
11.8
8.9
0.75
12.6
25.2
1.95
-
31.7
8.2
4.3
4.3
15.1
30.3
38.2
12.2
9.1
0.85
12.8
25.4
2.05
5.0
Inches
Min.
Max.
1.241
0.307
0.158
0.162
0.162
0.587
1.186
1.497
0.465
0.351
0.030
0.496
0.993
0.077
-
1.249
0.323
0.169
0.169
0.595
1.193
1.505
0.481
0.359
0.033
0.504
1.001
0.081
0.197
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627