DSEI 20-12A IFAVM = Fast Recovery Epitaxial Diode (FRED) VRSM VRRM Type 1200V 1200V DSEI 20-12A VRRM = 1200 V trr = 40 ns C A TO-220 AC Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 70 17 220 A A A IFSM TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 130 140 A A TVJ = 150°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 110 120 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 85 80 A2s A2 s TVJ = 150°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 60 60 A2s A2 s -40...+150 150 -40...+150 °C °C °C 78 W ∫i2dt 17 A Maximum Ratings TVJ TVJM Tstg Ptot TC = 25°C Md Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. C C A A = Anode C = Cathode Features Low IRM-values Planar passivated chips Very short recovery time Soft recovery behaviour Epoxy meet UL 94V-0. Extremely low switching losses International standard package JEDEC TO-220 AC ● ● ● ● ● ● ● Weight 2 g Applications Snubber diode Anti saturation diode Inductive heating and melting Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Antiparallel diode for high frequency switching devices Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ● Symbol Test Conditions Characteristic Values Typ. Max. VR = VRRM VR = 0.8 V RRM VR = 0.8 V RRM TVJ = 25°C TVJ = 25°C TVJ = 125°C 750 250 7 µA µA mA VF IF TVJ = 150°C TVJ = 25°C 1.87 2.15 V V V T0 rT For power-loss calculations only T VJ = T VJM 1.65 18.2 V mΩ IR = 12 A RthJC RthCK RthJA IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C I RM VR = 540 V; I F = 20 A; -diF/dt = 100 A/µs L ≤ 0.05 µH TVJ = 100°C ● ● ● ● ● 0.5 trr ● 40 7 1.6 K/W K/W 60 K/W 60 ns A ● Advantages Low losses Low noise switching High reliability circuit operation Low voltage peaks for reduced protection circuits Operating at lower temperature or space saving by reduced cooling ● ● ● ● ● ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to DIN/IEC 747 ©1996 IXYS Corporation. All rights reserved. 96501 (7/96) IXYS Corporation 3540 Bassett Street, Santa Clara, CA 95054 Phone: (408) 982-0700 Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-5030 Fax: +49-6206-503627 DSEI 20-12A Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF /dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -di F /dt. Fig. 6 Peak forward voltage versus -diF /dt. Dim. Dimensions miniBLOC SOT-227 B M4 screws (4x) supplied Fig. 7 Transient thermal impedance junction to case. A B C D E F G H J K L M N O P Millimeter Min. Max. 31.5 7.8 4.0 4.1 4.1 14.9 30.1 38.0 11.8 8.9 0.75 12.6 25.2 1.95 - 31.7 8.2 4.3 4.3 15.1 30.3 38.2 12.2 9.1 0.85 12.8 25.4 2.05 5.0 Inches Min. Max. 1.241 0.307 0.158 0.162 0.162 0.587 1.186 1.497 0.465 0.351 0.030 0.496 0.993 0.077 - 1.249 0.323 0.169 0.169 0.595 1.193 1.505 0.481 0.359 0.033 0.504 1.001 0.081 0.197 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara, CA 95054 Phone: (408) 982-0700 Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-5030 Fax: +49-6206-503627