HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N07 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM Continuous Transient ID25 IL(RMS) IDM TC = 25°C Terminal current limit TC = 25°C, pulse width limited by TJM IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C PD TC = 25°C Maximum Ratings 70 70 TJ TJM Tstg 1.6mm (0.062 in.) from case for 10s VISOL 50/60Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque 70V 280A Ω 5mΩ 250ns miniBLOC, SOT-227 B (IXFN) E153432 ±20 ±30 TL = = ≤ ≤ t = 1min t = 1s Weight S G V V V V 280 100 1120 A A A 180 60 3 A mJ J 20 V/ns 600 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ 1.5/13 1.3/ 11.5 Nm/lb.in. Nm/lb.in. 30 g S D G = Gate S = Source Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z z z z z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 70 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 120A, Note 1 International standard package miniBLOC with Aluminium nitride isolation Low RDS(on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped inductive switching (UIS) rated Low package inductance Fast intrinsic Rectifier Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D = Drain Easy to mount Space savings High power density Applications V z DC-DC converters Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z Temperature and lighting controls z Low voltage relays z TJ = 125°C © 2008 IXYS Corporation, All rights reserved 4.0 V ±200 nA 100 2 μA mA 5 mΩ DS98555C(4/08) IXFN280N07 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 47 VDS = 15V, ID = 60A , Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 90A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 35V, ID = 100A Qgd 78 SOT-227B Outline S 11.5 nF 4800 pF 2650 pF 0.74 Ω 40 ns 90 ns 85 ns 50 ns 360 nC 60 nC 182 nC 0.22 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr QRM IRM IF = 50A, -di/dt = 100A/μs, VR= 50V 280 A 1120 A 1.3 V 250 ns μC A 1.2 10 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN280N07 Fig. 2. Output Characteristics @ 125ºC Fig. 1. Extended Output Characteristics @ 25ºC 280 350 VGS = 15V 10V 9V 300 240 8V 200 ID - Amperes 250 ID - Amperes VGS = 15V 10V 9V 8V 7V 200 150 6V 7V 160 6V 120 80 100 5V 50 40 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 3.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 140A Value vs. Junction Temperature Fig. 3. RDS(on) Normalized to ID = 140A Value vs.Drain Current 1.9 1.8 VGS = 10V 1.7 15V 1.6 1.8 ---- VGS = 10V 1.7 RDS(on) - Normalized RDS(on) - Normalized 1.6 1.5 TJ = 125ºC 1.4 1.3 1.2 1.1 1.0 I D = 280A 1.4 I D = 140A 1.3 1.2 1.1 1.0 0.9 TJ = 25ºC 0.9 1.5 0.8 0.8 0.7 0.7 0.6 0 50 100 150 200 250 300 350 -50 -25 ID - Amperes 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Forward Voltage Drop of Intrinsic Diode Fig. 5. Maximum Drain Current vs. Case Temperature 120 330 110 300 External-Lead Current Limit 100 270 90 240 80 IS - Amperes ID - Amperes 0 70 60 50 40 210 180 150 TJ = 125ºC 120 TJ = 25ºC 90 30 60 20 30 10 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2008 IXYS Corporation, All rights reserved 100 125 150 0.4 0.5 0.6 0.7 0.8 VSD - Volts 0.9 1.0 1.1 1.2 IXFN280N07 Fig. 8. Transconductance Fig. 7. Input Admittance 140 130 TJ = - 40ºC 120 120 110 100 g f s - Siemens ID - Amperes 100 TJ = 125ºC 25ºC - 40ºC 80 60 25ºC 90 80 125ºC 70 60 50 40 40 30 20 20 10 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 VGS - Volts 60 80 100 120 140 160 180 ID - Amperes Fig. 9. Capacitance Fig. 10. Gate Charge 10 100,000 f = 1 MHz VDS = 35V 9 8 I G = 10mA 7 Ciss VGS - Volts Capacitance - PicoFarads I D = 100A 10,000 Coss 6 5 4 3 2 Crss 1 1,000 0 0 5 10 15 20 25 30 35 40 0 50 100 VDS - Volts 150 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 10,000 1.000 TJ = 150ºC TC = 25ºC Single Pulse 100µs 1,000 25µs RDS(on) Limit 100 Z(th)JC - ºC / W ID - Amperes 1ms 10ms External-Lead Limit 0.100 0.010 DC 10 1 10 100 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_280N07(9X)4-01-08