High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE(sat) tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, 33 A IC90 TC = 90°C 20 A ICM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω; VCE = 0.8 VCES Clamped inductive load, L = 100 mH ICM = 40 A PC TC = 25°C 350 W -55 ... +150 °C TJ G C E G = Gate C = Collector E = Emitter TAB = Collector Features l l TJM 150 °C Tstg -55 ... +150 °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque l 1.15/10 Nm/lb.in. Weight 6 g C (TAB) l l Leaded TO-268 package High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) Monolithic construction - high blocking voltage capability - very fast turn-off characteristics MOS Gate turn-on - drive simplicity Intrinsic diode Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l BVCES IC = 1 mA, VGE = 0 V VGE(th) IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 40N140 40N160 = 2 mA, VCE = VGE 1400 1600 4 8 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V 6.2 TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. C4 - 26 V V V 400 3 µA mA ± 500 nA 7.1 7.8 V V l l l l AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies CRT deflection Lamp ballasts Advantages l l Space savings High power density 98662 (10/99) © 2000 IXYS All rights reserved IXBJ 40N140 IXBJ 40N160 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. C ies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg td(on) t ri td(off) t fi IC = 20 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 960 V, RG = 22 Ω 3300 pF 220 pF 30 pF 130 nC 200 ns 60 ns 270 ns 40 ns RthCK 0.25 Reverse Conduction VF All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) 0.35 K/W RthJC Symbol Leaded TO-268 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 % © 2000 IXYS All rights reserved min. typ. max. 2.5 5 V Dim. Inches Min Max Millimeters Min Max A A1 b b2 .193 .106 .045 .075 .201 .114 .057 .083 4.90 2.70 1.15 1.90 5.10 2.90 1.45 2.10 C C2 .016 .057 .026 .063 .040 1.45 .065 1.60 D D1 E E1 e .543 .551 .488 .500 .624 .632 .524 .535 .215 BSC H 1.365 1.395 34.67 35.43 L L1 L2 .780 .079 .039 .800 .091 .045 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15 C4 - 27 IXBJ 40N140 IXBJ 40N160 70 70 VGE = 17V TJ = 25°C VGE = 17V TJ = 125°C 60 60 15V 13V IC - Amperes IC - Amperes 15V 50 40 30 20 13V 40 30 20 10 10 0 50 0 2 4 6 8 10 12 14 16 0 18 0 2 4 Fig. 1 Output Characteristics 10 12 14 16 18 Fig. 2 High Temperature Output Chacteristics 70 70 VCE = 20V 60 60 50 IF - Amperes IC - Amperes 8 VCE - Volts VCE - Volts 40 TJ = 25°C TJ = 125°C 30 20 50 40 30 TJ = 25°C 20 TJ = 125°C 10 10 0 6 5 6 7 8 9 10 11 12 0 0.0 13 0.5 1.0 VGE - Volts 2.5 3.0 3.5 4.0 Fig. 4 Forward voltage drop of the Intrinsic Diode 100 VCE = 600V IC = 20A 14 2.0 VF - Volts Fig. 3 Transfer Characteristics 16 1.5 ICM - Amperes VGE - Volts 12 10 8 6 4 10 TJ = 125°C VCEK < VCES IXBH 40N140 IXBH 40N160 1 2 0 0 20 40 60 80 100 120 QG - nanocoulombs Fig. 5 Gate Charge Characteristics C4 - 28 140 0.1 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Based Safe Operating Area © 2000 IXYS All rights reserved IXBJ 40N140 IXBJ 40N160 50 VCE = 960V VGE = 15V RG = 22 TJ = 125°C 2 tfi - nanoseconds Eoff - milijoules 3 1 VCE = 960V VGE = 15V 40 RG = 22 TJ = 125°C 30 20 10 0 0 0 10 20 30 40 0 10 IC - Amperes td(off) - nanoseconds Eoff - milijoules 40 Fig. 8 Collector Current Fall Time 400 VCE = 960V VGE = 15V IC = 20A TJ = 125°C 2 30 IC - Amperes Fig. 7 Turn off Energy vs. Collector Current 3 20 1 0 VCE = 960V VGE = 15V IC = 20A TJ = 125°C 300 200 100 0 0 10 20 30 40 0 RG - Ohms 10 20 30 40 RG - Ohms Fig. 9 Turn-off Energy vs. Gate Resistance Fig.10 Turn Off Delay Time vs. Gate Resistance 1 ZthJC - K/W 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 IXBH40 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig.11 Transient Thermal Impedance © 2000 IXYS All rights reserved C4 - 29