KEC KDV273UL

SEMICONDUCTOR
KDV273UL
TECHNICAL DATA
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
VCO FOR UHF/VHF BAND.
TENTATIVE
FEATURES
High Capacitance Ratio : C1V/C4V =2.0(Typ.)
Low Series Resistance : rs=0.39
(Typ.)
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
A
SYMBOL
RATING
UNIT
Reverse Voltage
VR
10
V
Junction Temperature
Tj
150
Tstg
-55 150
Storage Temperature Range
DIM MILLIMETERS
_ 0.05
A
1.0 +
_ 0.05
B
0.6 +
0.36 +0.02
C
- 0.03
_ 0.03
D
0.5 +
_ 0.03
0.25 +
E
_ 0.03
G
0.65 +
H
0.05
B
H
E
G
E
H
D
1. ANODE
2. CATHODE
ULP-2
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
VR
IR=1 A
10
-
-
V
Reverse Current
IR
VR=10V
-
-
10
nA
C1V
VR=1V, f=1MHz
15
16
17
C4V
VR=4V, f=1MHz
7.3
8.0
8.7
1.8
2.0
-
-
0.39
0.5
Capacitance
pF
Capacitance Ratio
K
-
Series Resistance
rS
VR=1V, f=470MHz
Marking
Type Name
VB
2007. 5. 16
Revision No : 0
1/2
KDV273UL
IR - VR
C T - VR
1K
f=1MHz
Ta=25 C
Ta=25 C
REVERSE CURRENT I R (pA)
CAPACITANCE C T (pF)
100
10
10
1
1
0
1
2
3
4
5
6
7
8
REVERSE VOLTAGE VR (V)
2007. 5. 16
100
Revision No : 0
9
10
0
2
4
6
8
10
12
REVERSE VOLTAGE VR (V)
2/2