SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. TENTATIVE FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) C MAXIMUM RATING (Ta=25 CHARACTERISTIC ) A SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range DIM MILLIMETERS _ 0.05 A 1.0 + _ 0.05 B 0.6 + 0.36 +0.02 C - 0.03 _ 0.03 D 0.5 + _ 0.03 0.25 + E _ 0.03 G 0.65 + H 0.05 B H E G E H D 1. ANODE 2. CATHODE ULP-2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1 A 10 - - V Reverse Current IR VR=10V - - 10 nA C1V VR=1V, f=1MHz 15 16 17 C4V VR=4V, f=1MHz 7.3 8.0 8.7 1.8 2.0 - - 0.39 0.5 Capacitance pF Capacitance Ratio K - Series Resistance rS VR=1V, f=470MHz Marking Type Name VB 2007. 5. 16 Revision No : 0 1/2 KDV273UL IR - VR C T - VR 1K f=1MHz Ta=25 C Ta=25 C REVERSE CURRENT I R (pA) CAPACITANCE C T (pF) 100 10 10 1 1 0 1 2 3 4 5 6 7 8 REVERSE VOLTAGE VR (V) 2007. 5. 16 100 Revision No : 0 9 10 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V) 2/2