KDV251M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO FOR C/P, CB PLL B A FEATURES Low Series Resistance : 0.6 (Max.) O F High Capacitance Ratio : 1.7(Min.) 2.2(Max.) H G M RATING UNIT Reverse Voltage VR 12 V Junction Temperature Tj 150 Tstg -55 150 E E D SYMBOL 2 1 K CHARACTERISTIC C ) J MAXIMUM RATING (Ta=25 N DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ 0.15 D 2.40 + E 1.27 F 2.30 _ 0.50 G 14.00+ H 0.60 MAX J 1.05 K 1.45 L 25 0.80 M N 0.55 MAX O 0.75 L Storage Temperature Range 1. ANODE 2. CATHODE 1 2 CLASSIFICATION OF CAPACITANCE RATIO GRADE TO-92M CAPACITANCE RATIO (C1.6V/C5V) NONE 1.70 2.20 A 1.70 1.82 B 1.80 1.92 C 1.90 2.020 D 2.00 2.12 E B L L D GRADE 2 2.20 3 H G 2.10 A E 1 Grade J K C Marking P N P Lot No. DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 Type Name Q3 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Voltage VR IR=10 A Reverse Current IR VR=9V MIN. TYP. MAX. UNIT 12 - - V - - 200 nA Capacitance C1.6V VR=1.6V, f=1MHz 23 - 38 pF Capacitance C5V VR=5V, f=1MHz 11 - 19 pF 1.7 - 2.2 - - 0.6 Capacitance Ratio C1.6V/C5V Series Resistance rS 2002. 6. 25 Revision No : 4 VR=1V, f=50MHz 1/2 KDV251M/S C - VR Q - VR 100 2k f=50MHz Ta=25 C Ta=25 C 50 FIGURE OF MERIT Q CAPACITANCE C (pF) f=1MHz 30 10 5 500 300 100 0 2 4 6 8 REVERSE VOLTAGE V R (V) 2002. 6. 25 1k Revision No : 4 10 0 2 4 6 8 10 REVERSE VOLTAGE V R (V) 2/2