KEC KDV241E

SEMICONDUCTOR
KDV241E
TECHNICAL DATA
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
ANTENNA TUNNING APPLICATION
High Capacitance Ratio : C0.5V/C3V=3.5(Min.)
Excellent C-V Characteristics, and Small Tracking Error.
C
E
1
A
Low Tuning Voltage : VT=3V.
B
CATHODE MARK
FEATURES
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
VR
10
V
Junction Temperature
Tj
125
Tstg
-55 125
Storage Temperature Range
DIM
A
B
C
D
E
F
)
1. ANODE
2. CATHODE
MILLIMETERS
_ 0.10
1.60 +
_ 0.10
1.20 +
_ 0.10
0.80 +
_ 0.05
0.30 +
_ 0.10
0.60 +
_ 0.05
0.13 +
ESC
Marking
Type Name
TM
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
IR
Reverse Current
Capacitance
TYP.
MAX.
UNIT
-
-
10
nA
VR=0.5V, f=1MHz
7.2
-
8.9
C1.5V
VR=1.5V, f=1MHz
3.3
-
4.2
C3V
VR=3V, f=1MHz
1.8
-
2
3.5
-
-
-
-
1.3
C0.5V/C3V
Series Resistance
rS
Revision No : 0
VR=25V
MIN.
C0.5V
Capacitance Ratio
2007. 6. 11
TEST CONDITION
VR=0.5V, f=470MHz
pF
-
1/2
KDV241E
I R - Tj
2
14
REVERSE CURRENT I R (nA)
TOTAL CAPACITANCE CT (pF)
10
C T - VR
10
12
10
8
6
4
2
0
0
20
40
60
80
JUNCTION TEMPERATURE T j ( C)
2007. 6. 11
f=1MHz
Ta=25 C
Revision No : 0
100
0
1
10
REVERSE VOLTAGE VR (V)
2/2