SEMICONDUCTOR KDV241E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE ANTENNA TUNNING APPLICATION High Capacitance Ratio : C0.5V/C3V=3.5(Min.) Excellent C-V Characteristics, and Small Tracking Error. C E 1 A Low Tuning Voltage : VT=3V. B CATHODE MARK FEATURES 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range DIM A B C D E F ) 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC Marking Type Name TM ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL IR Reverse Current Capacitance TYP. MAX. UNIT - - 10 nA VR=0.5V, f=1MHz 7.2 - 8.9 C1.5V VR=1.5V, f=1MHz 3.3 - 4.2 C3V VR=3V, f=1MHz 1.8 - 2 3.5 - - - - 1.3 C0.5V/C3V Series Resistance rS Revision No : 0 VR=25V MIN. C0.5V Capacitance Ratio 2007. 6. 11 TEST CONDITION VR=0.5V, f=470MHz pF - 1/2 KDV241E I R - Tj 2 14 REVERSE CURRENT I R (nA) TOTAL CAPACITANCE CT (pF) 10 C T - VR 10 12 10 8 6 4 2 0 0 20 40 60 80 JUNCTION TEMPERATURE T j ( C) 2007. 6. 11 f=1MHz Ta=25 C Revision No : 0 100 0 1 10 REVERSE VOLTAGE VR (V) 2/2