SEMICONDUCTOR TECHNICAL DATA KDV1484E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING. FEATURES Small Package : ESC 1 A Low Series Resistance E C B CATHODE MARK High Capacitance Ratio 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage VR 15 V Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range F DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC Marking Type Name V1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL IR Reverse Current Capacitance Capacitance Ratio VR=15V MIN. TYP. MAX. UNIT - - 10 nA C2V VR=2V, f=1MHz 14.15 - 15.75 C6V VR=6V, f=1MHz 6.26 - 8.20 C8V VR=8V, f=1MHz - 5.4 - C2V/C6V - 1.9 - - C2V/C8V - 2.5 - - - - 0.57 rS Series Resistance TEST CONDITION VR=5V, f=470MHz pF - Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) 8V (VR=2V~8V) 2006. 10. 11 Revision No : 0 1/2 KDV1484E IR - V R 10 -10 TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A) 10 CT - VR -11 10 -12 10 -13 0 10 20 30 15 10 5 0 1 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) rs - V R ∆(LOG CT) / ∆(LOG VR) - VR 50 0 f=470MHz 0.5 ∆(LOG CT) / ∆(LOG VR) SERIES RESISTANCE rs (Ω) f=1MHz 40 0.6 0.4 0.3 0.2 0.1 -0.5 -1.0 -1.5 0 1 10 REVERSE VOLTAGE VR (V) 2006. 10. 11 20 Revision No : 0 50 1 10 50 REVERSE VOLTAGE VR (V) 2/2