SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. K L H F Variations of Capacitance Values is Little. A Excellent C-V Characteristics. 1 E High Capacitance Ratio : C1V/C5V=5.0(Min.) G B CATHODE MARK FEATURES Small Package. 2 J D C I MAXIMUM RATING (Ta=25 CHARACTERISTIC DIM A ) SYMBOL RATING UNIT Reverse Voltage VR 16 V Junction Temperature Tj 150 Tstg -55 150 MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + B C D Storage Temperature Range M M 0.30+0.06/-0.04 _ 0.05 1.70 + E MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + F G H I 1. ANODE 2. CATHODE J K L M _ 0.05 0.4 + 2 +4/-2 4~6 USC GRADE CAPACITANCE(CIV) A 30.16~33.63 B 33.30~37.13 C 36.77~40.99 UNIT pF Marking Type Name Grade B ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=10 A 16 - - V Reverse Current IR VR=10V - - 50 nA 30.16 35.60 40.99 C1V VR=1V, f=1MHz C4.5V VR=4.5V, f=1MHz 6.2 7.7 9.2 Capacitance Ratio K C1V/C5V, f=1MHz 5.0 - - Series Resistance rS VR=1.5V, f=100MHz - 0.8 1.0 Capacitance 2002. 6. 25 Revision No : 2 pF 1/2 KDV1472 I R - VR C - VR 1n 100 REVERSE CURRENT I R (A) f=1MHz CAPACITANCE C (pF) Ta=25 C 50 30 10 5 100p Ta=85 C 10p Ta=55 C 1p Ta=25 C 100f 10f 0 1 2 3 4 0 5 REVERSE VOLTAGE VR (V) 2 4 6 8 16 1 SERIES RESISTANCE r s (Ω) Ta=25 C 300 FIGURE OF MERIT Q 14 rs - f 500 z MH f=50 Hz 0M f=7 MHz 00 f=1 100 50 30 10 VR=1.5V Ta=25 C 0.7 0.5 0 1 2 3 4 5 20 50 100 300 500 1K FREQUENCY f (MHz) REVERSE VOLTAGE VR (V) C(Ta)/C(25 C) - VR (V) (ppm/ C) - VR 1.08 1k f=1MHz 1.06 VARIATION OF CAPACITANCE (ppm/ C) VARIATION OF CAPACITANCE C(Ta)/C(25 C) 12 REVERSE VOLTAGE VR (V) QR - V Ta=85 C 1.04 Ta=55 C 1.02 Ta=25 C 1 0.98 Ta=-15 C 0.96 Ta=-55 C 0.94 0.92 700 500 300 f=1MHz Ta=-55 C~+85 C 100 0 1 2 3 REVERSE VOLTAGE VR (V) 2002. 6. 25 10 Revision No : 2 4 5 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2/2