SEMICONDUCTOR TECHNICAL DATA KDV310E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES Small Package : ESC. 1 A Low Series Resistance : rs=1.1 (Max.) E C B CATHODE MARK High Capacitance Ratio : C2V/C25V=17.0(Min.) 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage VR 34 V Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range F DIM A B C D E F 1. ANODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + 2. CATHODE ESC Marking Type Name VD ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Capacitance SYMBOL TEST CONDITION MIN. TYP. MAX. IR1 VR=32V - - 10 IR2 VR=32V, Ta=60 - - 100 C2V VR=2V, f=1MHz 47.0 - 53.0 C25V VR=25V, f=1MHz 2.65 - 3.0 17.0 - - - - 1.1 Capacitance Ratio C2V/C25V Series Resistance rS VR=5V, f=470MHz UNIT nA pF Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) 0.02 (VR=2~25V) 2004. 4. 20 Revision No : 0 1/2 KDV310E I R - VR 10 10 10 80 TOTAL CAPACITANCE CT (pF) REVERSE CURRENT I R (A) 10 C T - VR -10 -11 -12 -13 0 10 20 30 40 20 1 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) r s - VR ∆(LOG CT ) / ∆(LOG VR ) - VR 50 0 f=470MHz ∆(LOG CT) / ∆(LOG VR) SERIES RESISTANCE rs (Ω) 60 0 40 1.0 0.8 0.6 0.4 0.2 -1.0 -2.0 -3.0 1 3 5 10 REVERSE VOLTAGE VR (V) 2004. 4. 20 f=1MHz Revision No : 0 30 1 10 50 REVERSE VOLTAGE VR (V) 2/2