SEMICONDUCTOR TECHNICAL DATA KDV262 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. L K H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.6 (Typ.) 1 E High Capacitance Ratio : C2V/C25V=12.5(Typ.) G B CATHODE MARK FEATURES Useful for Small Size Tuner. 2 J D C I MAXIMUM RATING (Ta=25 CHARACTERISTIC DIM A ) SYMBOL RATING UNIT VR 34 V Peak Reverse Voltage VRM 36 (RL=10k ) V Junction Temperature Tj 125 Tstg -55 125 Reverse Voltage Storage Temperature Range MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + B C M D M 0.30+0.06/-0.04 _ 0.05 1.70 + E MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + F G H I 1. ANODE 2. CATHODE J K L M _ 0.05 0.4 + 2 +4/-2 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1 A 34 - - V Reverse Current IR VR=28V - - 10 nA Capacitance C2V VR=2V, f=1MHz 33 35.5 38 pF Capacitance C25V VR=25V, f=1MHz 2.6 2.85 3.0 pF C2V/C25V 12.0 12.5 - C25V/C28V 1.03 - - - 0.6 0.8 Capacitance Ratio rS Series Resistance VR=5V, f=470MHz - Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) 0.02 (VR=2~25V) Marking Type Name UQ 2003. 10. 16 Revision No : 2 1/2 KDV262 IR C V - VR REVERSE CURRENT I R (A) f=1MHz CAPACITANCE CV (pF) VR 1000p 50 Ta=25 C 10 5 5 C Ta=7 0 C Ta=5 100p 25 Ta= 10p C 1p 0.1p 1 0 10 20 0 30 rs 8 16 - VR rs 1.0 - 32 f 1.0 SERIES RESISTANCE r s (Ω) f=470MHz Ta=25 C 0.8 24 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) SERIES RESISTANCE rs (Ω) - 0.6 0.4 0.2 VR =5V Ta=25 C 0.8 0.6 0.4 0.2 0 0 1 3 5 10 30 50 100 300 500 FREQUENCY f (MHz) REVERSE VOLTAGE VR (V) CAPACITANCE CHANGE RATIO C (%) C - Ta 3 f=1MHz VR =2V 2 1 10V 0 20V 25V -1 -2 -40 -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta ( C) 2003. 10. 16 Revision No : 2 2/2