LRC LNTS4409NWT1G

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
LNTS4409NWT1G
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
3
Features
• Advance Planar Technology for Fast Switching, Low RDS(on)
• Higher Efficiency Extending Battery Life
• This is a Pb−Free Device
1
2
SC-70
Applications
• Boost and Buck Converter
• Load Switch
• Battery Protection
V(BR)DSS
RDS(on) Typ
ID Max
249 mW @ 4.5 V
25 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
V
Gate−to−Source Voltage
VGS
"8.0
V
Drain Current
Continuous Drain Current
(Note 1)
t<5s
TA = 25°C
ID
0.75
A
Steady
State
TA = 25°C
ID
0.7
A
TA = 75°C
Steady State
PD
0.28
W
Power Dissipation (Note 1)
tv5s
PD
0.33
W
tp = 10 ms
IDM
3.0
A
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) (Note 1)
IS
0.3
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
250
V
Operating Junction and Storage Temperature
SC-70 (3-Leads)
Gate
0.6
Power Dissipation (Note 1)
Pulsed Drain Current
PIN CONNECTIONS
1
3
Source
2
(Top View)
MARKING DIAGRAM
3
ESD Rating − Machine Model
T4
THERMAL RESISTANCE RATINGS
Rating
Drain
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
450
°C/W
Junction−to−Ambient − t v 5 s (Note 1)
RqJA
375
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
T4
M
M
Rating
0.75 A
299 mW @ 2.7 V
2
= Specific Device Code
= Month Code
Device
Package
Shipping
LNTS4409NWT1G
SC−70
(Pb−Free)
3000/Tape & Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
30
IDSS
VGS = 0 V,
VDS = 20 V
Gate−to−Source Leakage Current
V
mV/°C
TJ = 25°C
0.5
TJ = 70°C
2.0
TJ = 125°C
5.0
IGSS
VDS = 0 V, VGS = 8.0 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
3
uA
1.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.65
−2.0
mV/°C
VGS = 4.5 V, ID = 0.6 A
249
350
VGS = 2.7 V, ID = 0.2 A
299
400
VGS = 4.5 V, ID = 1.2 A
260
VDS = 5.0 V, ID = 0.5 A
0.5
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
49
60
22.4
30
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
8.0
12
Total Gate Charge
QG(TOT)
1.2
1.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
VGS = 4.5 V, VDS = 15 V,
ID = 0.8 A
pF
nC
0.2
0.28
0.50
QGD
0.3
0.40
td(ON)
5.0
12
8.2
8.0
23
35
41
60
0.82
1.20
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 0.7 A, RG = 51 W
tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 0.6 A
TJ = 25°C
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Rev .O 2/5
V
LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
3.2
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
3.2
TJ = 25°C
8V
4.5 V
3V
2.4
2.5 V
VGS = 2 V
1.6
0.8
VGS = 1.5 V
2.4
1.6
0.8
25°C
TJ = 125°C
0
0
0.8
1
0.5
2
1.5
3
2.5
0.8
1.6
3.2
2.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
0.8
VGS = 4.5 V
0.6
TJ = 125°C
0.4
TJ = 25°C
TJ = −55°C
0
3.2
0.8
1.6
2.4
ID, DRAIN CURRENT (AMPS)
0.6
TJ = 125°C
0.4
TJ = 25°C
TJ = −55°C
0
0.8
1.6
2.4
ID, DRAIN CURRENT (AMPS)
0
100
2
TJ = 25°C
VGS = 0 V
ID = 0.75 A
1.8
VGS = 2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
3.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
1.4
VGS = 4.5 V
1.2
1
80
60
Ciss
40
Coss
20
0.8
0.6
−50
4
VGS = 2.5 V
0.2
0.2
0
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
Crss
0
−25
0
25
50
75
100
125
150
0
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
Rev .O 3/5
25
LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G
3.2
5
QG(TOT)
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = 0.8 A
TJ = 25°C
0
0
0.2
0.8
1.0
0.4
0.6
Qg, TOTAL GATE CHARGE (nC)
1.2
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS = 0 V
2.4
1.6
0.8
TJ = 125°C
TJ = 25°C
0
1.4
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
Rev .O 4/5
1.2
LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
2
b
e
A
0.05 (0.002)
c
A2
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
Rev .O 5/5