DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3230 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES • Compact package G 0.8 ± 0.1 1.6 ± 0.1 • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) D S • Includes diode and high resistance at G - S 1.0 1.6 ± 0.1 PART NUMBER PACKAGE 2SK3230 SC-89 (TUSM) 0.5 ± 0.05 ORDERING INFORMATION ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note1 0.2 +0.1 –0 VDSX 20 V VGDO –20 V ID 10 mA IG 10 mA PT 200 mW Junction Temperature Tj 125 °C Storage Temperature Tstg –55 to +125 °C Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Note2 EQUIVALENT CIRCUIT Drain Gate Source Notes 1. VGS = –1.0 V 2 2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15942EJ1V0DS00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan © 2002 2SK3230 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Cut-off Current TEST CONDITIONS IDSS MIN. VDS = 5.0 V, VGS = 0 V TYP. MAX. UNIT 40 600 µA −1.0 V Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA −0.1 Forward Transfer Admittance | yfs1 | VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 350 µS Forward Transfer Admittance | yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 350 µS Input Capacitance Ciss VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 7.0 8.0 pF Noise Voltage NV See Test Circuit 1.8 3.0 µV IDSS RANK MARKING J2 J3 J4 J5 J6 J7 40 to 70 60 to 110 90 to 180 150 to 300 200 to 450 300 to 600 IDSS (µA) NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1 kΩ JIS A NV (r.m.s) C = 10 pF 2 Data Sheet D15942EJ1V0DS 2SK3230 TYPICAL CHARACTERISTICS (TA = 25°C) GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 40 DERATING FACTOR OF POWER DISSIPATION IG - Gate Current - µ A dT - Derating Factor - % 30 100 80 60 40 20 10 −1.0 −0.8 −0.6 −0.4 −0.2 −30 −40 0 20 40 60 80 100 120 140 160 VGS - Gate to Source Voltage - V TA - Ambient Temperature - ˚C INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE CiSS - Input Capacitance - pF IDS IDSS = S = 2 30 0 µ =1 0 00 µ 0 µ A A A 0.8 0.6 S 0.4 IDS ID - Drain Current - mA 100 VDS = 0 V f = 1.0 MHz VDS = 5 V 0.2 −0.6 −0.4 −0.2 0 50 20 10 5 2 1 1 +0.2 2 5 10 20 50 100 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS (off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - µ S 0.2 0.4 0.6 0.8 1.0 −20 20 1.0 0 −10 GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE DRAIN CURRENT CO-RELATION 10.0 VDS = 5 V 5.0 2.0 |yfs| 1.0 0.5 0.2 VGS (off) 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1000 Zero-Gate Voltage Drain Current - µ A Data Sheet D15942EJ1V0DS 3 2SK3230 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J2 ID - Drain Current - µA 0.10 V 150 0.05 V 100 VGS = 0 V 50 −0.15 V −0.05 V −0.10 V 0 2 4 6 2 6 8 0.10 V 300 0.05 V ID - Drain Current - µA 400 −0.15 V 4 6 8 0.15 V VGS = 0 V 200 −0.05 V 100 0 2 10 −0.10 V 0 2 4 −0.15 V 6 8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J6 0.15 V 0.05 V 420 VGS = 0 V 280 −0.05 V −0.10 V −0.15 V 140 2 4 6 10 RANK: J7 900 0.10 V 560 10 RANK: J5 0.15 V 0.10 V 720 0.05 V 540 VGS = 0 V −0.05 V 360 −0.10 V 180 −0.15 V 8 10 0 0 VDS - Drain to Source Voltage - V 4 4 0.10 V −0.10 V ID - Drain Current - µA 0 500 −0.05 V 0 −0.15 V −0.05 V −0.10 V 0.15 V VGS = 0 V 700 VGS = 0 V 60 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.05 V 0 0.05 V 120 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 0 0.10 V 180 VDS - Drain to Source Voltage - V 240 160 240 0 10 0.15 V VDS - Drain to Source Voltage - V 320 0 8 RANK: J4 400 RANK: J3 300 200 0 ID - Drain Current - µA 0.15 V ID - Drain Current - µA ID - Drain Current - µA 250 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2 4 6 8 VDS - Drain to Source Voltage - V Data Sheet D15942EJ1V0DS 10 2SK3230 [MEMO] Data Sheet D15942EJ1V0DS 5 2SK3230 [MEMO] 6 Data Sheet D15942EJ1V0DS 2SK3230 [MEMO] Data Sheet D15942EJ1V0DS 7 2SK3230 • The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4