Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current V(BR)GSS Max Max Unit V IG = – 1 µA, VDS = ØV – 100 – 100 pA VGS = – 15V, VDS = ØV – 250 – 250 nA VGS = – 15V, VDS = ØV – 100 – 100 pA VDG = 10V, ID = 5 mA – 100 – 100 nA VDG = 10V, ID = 5 mA – 25 IGSS IG Process NJ30L – 25 Test Conditions Gate Source Cutoff Voltage VGS(OFF) – 1.0 –5 – 1.0 –5 V VDS = 15V, ID = 5 nA Gate Source Voltage VGS – 0.3 –4 – 0.3 –4 V VDS = 15V, ID = 5 mA Drain Saturation Current (Pulsed) IDSS 7 40 7 40 mA VDS = 10V, VGS = ØV 3000 10000 3000 10000 µS VDG = 10V, ID = 5 mA 3000 10000 3000 10000 TA = 150°C TA = 125°C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs f = 1 kHz µS VDG = 10V, ID = 5 mA f = 100 MHz 100 100 µS VDG = 10V, ID = 5 mA f = 1 kHz Common Source Output Conductance gos 150 150 µS VDG = 10V, ID = 5 mA f = 100 MHz Common Source Input Capacitance Ciss 5 5 pF VDG = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 pF VDG = 10V, ID = 5 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 20 20 nV/√Hz VDG = 10V, ID = 5 mA f = 10 kHz Noise Figure NF 1 1 dB VDG = 10V, ID = 5 mA RG = 100 KΩ f = 10 kHz Gate Source Differential Voltage VGS1 – VGS2 10 15 mV VDG = 10V, ID = 5 mA Gate Differential Current IG1 – IG2 20 20 nA VDG = 10V, ID = 5 mA TA = 125°C Drain Saturation Current Ratio IDSS1 / IDSS2 0.95 1 0.95 1 VDG = 10V, VGS = ØV Transconductance Ratio gfs1 / gfs2 1 0.95 1 VDG = 10V, ID = 5 mA f = 1 kHz Gate Source Differential Voltage With Temperature ∆VGS1 – VGS2 ∆T 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 0.95 20 40 µV/°C VDG = 10V, ID = 5 mA TA = 25°C 20 40 µV/°C VDG = 10V, ID = 5 mA TB = 125°C 20 40 µV/°C VDG = 10V, ID = 5 mA TA = 35°C 20 40 µV/°C VDG = 10V, ID = 5 mA TB = 25°C SOIC-8 Package Pin Configuration See Section G for Outline Dimensions 1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted www.interfet.com