NTE NTE985

NTE985
Integrated Circuit
TV Luminance Processor
Description:
The NTE985is a monolithic silicon integrated circuit that performs the luminance processing functions
of amplification; contrast, brightness and peaking control; blanking; and black−level clamping.
Features:
D Black−Level Clamping
D Linear DC Controls for Brightness, Contrast and Peaking
D Horizontal and Vertical Blanking
D “Hermetic Chip” Construction
D Silicon Nitride Passivated
D Platinum Silicide Ohmic Contacts
D Operates with Standard or Tapped Delay Line
Absolute Maximum Ratings:
DC Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57mA
Device Dissipation:
Up to TA = +55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Above TA = +55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly 7.9mW/°C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . . +265°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Bias
Parameter
Volts
Test Conditions
S1
S2
S3
S4
S5
S6
S7
Limits
S8
S9
Min
Typ
Max
U
n
i
t
S10 S11
Switching Positions for Characteristics Measurements
Static Characteristics
Voltage At Term. 13
6.5
2
1
1
2
2
4
1
2
2
1
1
11
12.3
13.2
V
Quiescent Voltage At Term. 4
6.5
2
1
1
2
2
3
1
2
2
1
1
3.3
4
5.7
V
Quiescent Voltage At Term 7
6.5
2
1
1
2
2
2
1
2
2
1
1
7.1
7.7
8.3
V
Current into Term. 13 (Term 13
Connected to 11V)
6.5
2
1
1
2
2
3
1
2
2
1
2
10
18
30
mA
Wide−Band Gain (Note 1)
7.3
1
1
1
2
1
2
1
1
1
2
1
1
3
5
dB
Contrast Gain Reduction
(Note 2)
7.3
1
1
1
2
1
2
1
1
2
2
1
27
30
−
dB
Peaking Gain (Note 1)
7.3
1
1
2
2
1
2
1
1
1
2
1
9
13
17
dB
Peaking Gain Reduction
(Note 3)
7.3
1
1
2
2
1
2
1
1
1
2
1
16
18
−
dB
7.3
1
−
1
1
1
2
−
2
1
2
1
−
20
−
%
7.3
1
−
1
1
1
2
−
2
1
2
1
−
40
−
%
Dynamic Characteristics
Max. Intermodulation Distortion
3.8V (Note 4)
5V (Note 5)
Note 1 Set 50kHz generator for 200mVrms. Adjust R1 Peaking control for minimum setting, measure
wide−band gain at terminal 7.
Note 2 Set 50kHz generator for 200mVrms. Adjust R1 for minimum setting, measure contrast gain
reduction at terminal 7.
Note 3 Set 50kHz generator for 200mVrms. Adjust R1 for minimum setting, measure peaking gain
reduction at terminal 7.
Note 4 Adjust R1 for minimum setting. With S2 at switch position 1 and S7 at switch position 3, set
50kHz generator for 3.8Vp−p. Then with S2, set 1MHz generator for 200mVrms. Then with
S7 at switch position 2, measure downward modulation of the 1MHz signal due to the 50kHz
signal.
A
B
Modulated
I−MHz Signal
A = Amplitude of 50kHz signal at deepest trough
B = Peak amplitude of 50kHz signal
Downward Modulation =
B−A
B
Note 5 Repeat step 4 except that the 50kHz generartor must be set at 5Vp−p
Pin Connection Diagram
Video Input
1
16 N.C.
Peaking Input
2
15 N.C.
Peaking Input
3
14 N.C.
Video Output
4
13 Shunt Reg and Bias
Substrate
5
12 Clamp Inhibit Input
Clamp Input
6
11
Clamp Video Output
7
10 Contrast Control
Blanking Input
8
9
Peaking Control
Brightness Control
16
9
.260 (6.6) Max
1
8
.785 (19.9) Max
.300 (7.62)
.200 (5.08)
Max
.245
(6.22)
Min
.100 (2.54)
.700 (17.7)