Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM 128 75 512 A A A IAR TC = 25°C 90 A EAR TC = 25°C 60 mJ EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns 540 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ ≤ 150°C, RG = 2 Ω PD TO-264 AA (IXTK) G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Motor controls DC choppers Switched-mode power supplies Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values Min. Typ. Max. 150 4.0 V ±100 nA TJ = 25°C TJ = 125°C 50 2 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 15 mΩ © 2003 IXYS All rights reserved 2.0 V Easy to mount with one screw (isolated mounting screw hole) Space savings High power density DS98952(03/03) IXTK 128N15 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 60A, pulse test 50 65 S 6000 pF 1700 pF C rss 680 pF td(on) 28 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 2 Ω (External) 30 ns 115 ns 17 ns 240 nC 50 nC 95 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.23 RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 128 A ISM Repetitive; pulse width limited by TJM 512 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V Trr IF = 25A, -di/dt = 100 A/µs, VR = 100V QRM 250 ns 3 µC TO-264 AA Outline Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343