IXYS IXTK120N25

Advance Technical Information
IXTK 120N25
High Current
MegaMOSTMFET
VDSS
ID25
= 250 V
= 120 A
Ω
= 22 mΩ
RDS(on)
N-Channel Enhancement Mode
Symbol
Test conditions
Maximum ratings
VDSS
TJ = 25°C to 150°C
250
V
VDGR
TJ = 25°C to 150°C; RGS = 1.0 MΩ
250
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
ID(RMS)
IDM
IAR
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
120
75
480
90
A
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
64
3.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC
560
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
= 25°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-264
0.7/6
Nm/lb.in.
10
g
TO-264 AA (IXTK)
D (TAB)
G
D
S
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times
Applications
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
V GS = 0 V, ID = 1 mA
VGS(th)
V DS = VGS, ID = 250 µA
IGSS
V GS = ±20 V DC, VDS = 0
IDSS
V DS = VDSS
V GS = 0 V
RDS(on)
V GS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2002 IXYS All rights reserved
250
2.0
TJ = 25°C
TJ = 125°C
V
•
•
•
Motor controls
DC choppers
Switched-mode power supplies
Advantages
4.0
V
±200
nA
•
50 µA
3 mA
•
•
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
22 mΩ
98879A (02/02)
IXTK 120N25
Symbol
Test Conditions
(T J = 25°C unless otherwise specified)
gfs
Characteristic values
Min. Typ.
Max.
V DS = 10 V; ID = 0.5 ID25, pulse test
Ciss
85
S
9400
pF
1730
pF
Crss
550
pF
td(on)
35
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
65
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
td(off)
RG = 1.5 Ω (External)
38
ns
175
ns
35
ns
tf
400
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
nC
70
nC
155
nC
0.22 K/W
RthJC
0.15
RthCK
Source-Drain Diode
K/W
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0V
120
A
ISM
Repetitive; pulse width limited by TJM
480
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 30A, -di/dt = 100 A/µs, VR = 100V
350
ns
6
µC
Qrr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1