HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE(SAT) = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G = Gate E = Emitter IC25 TC = 25°C A Features IC110 TC = 110°C 26 A ID110 TC = 110°C (40N60C2D1) 27 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V ICM = 80 A PC TC = 25°C 170 W Maximum Ratings -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 °C VISOL 50/60 Hz, RMS, t = 1 minute, IISOL < 1 mA 2500 V~ FC Mounting force 20..120/4.5..25 N/lb. 56 G z TJ z z z z Weight 4 g z z z z Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. BVCES IC = 250μA, VGE = 0 V 600 VGE(th) IC = 250 μA, VCE = VGE 3.0 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 30 A, VGE = 15 V © 2005 IXYS All rights reserved ISOLATED TAB C = Collector DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers z z Easy assembly High power density Very fast switching speeds for high frequency applications V 40N60C2 40N60C2/D1 TJ = 25°C TJ = 125°C E Advantages z Test Conditions C Applications z Symbol 600 V 56 A 2.7 V 32 ns 2.2 2.0 5.0 V 50 100 μA μA ±100 nA 2.7 V V DS99052C(10/05) IXGR 40N60C2 IXGR 40N60C2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. gfs IC = 30 A; VCE = 10 V, Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % 20 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 36 S 2500 pF 180 220 pF pF 54 pF 95 nC 14 nC 36 nC 40N60C2 40N60C2D1 Cres Qg Qge IC = 30 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) 18 ns tri Inductive load, TJ = 25°°C 20 ns td(off) IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 Ω 90 tfi Eoff td(on) tri Eon td(off) Inductive load, TJ = 125°°C 40N60C2 40N60C2D1 IC = 30 A, VGE = 15 V VCE = 400 V, RG = Roff = 3 Ω tfi RthJ-DCB RthJC RthCS (Note 1) (Note 2) ns 0.20 0.37 mJ 18 ns 20 ns 0.3 0.6 mJ mJ 130 ns 240 ns 0.50 mJ 0.26 K/W 0.74 K/W K/W 0.15 Reverse Diode (FRED) (D1 Version Only) ns 32 80 Eoff 140 ISOPLUS 247 Outline Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 30 A, VGE = 0 V, Pulse test t ≤ 300 μs, duty cycle d ≤ 2 % IRM t rr t rr IF = 30 A, VGE = 0 V, -diF/dt =100 A/μs, TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 100 A/μs; VR = 30 V TJ =150°C TJ = 25°C 1.6 2.5 V V 4 A ns ns 100 25 RthJC 1.5 K/W RthCS 0.15 K/W Notes: 1. RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate 2. RthJC is the thermal resistance junction-to-external side of DCB substrate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXGR 40N60C2 IXGR 40N60C2D1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 210 60 VG E = 15V 13V 11V 50 VG E = 15V 13V 11V 9V 180 9V 150 I C - Amperes I C - Amperes 40 7V 30 20 120 90 7V 60 10 30 5V 5V 0 0 0.5 1 1.5 2 2.5 3 0 3.5 1 2 3 Fig. 3. Output Characteristics @ 125 Deg. C 6 7 1.3 VG E = 15V 13V 11V 9V 1.2 40 VC E (sat) - Normalized 50 I C - Amperes 5 Fig. 4. Temperature Dependence of V CE(sat) 60 7V 30 20 5V 10 I C = 60A 1.1 VG E = 15V 1 0.9 I C = 30A 0.8 0.7 I C = 15A 0.6 0 0.5 1 1.5 2 2.5 25 3 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Fig. 6. Input Admittance 4 210 T J = 25º C 180 3.5 150 3 2.5 I C - Amperes VC E - Volts 4 V C E - Volts V C E - Volts I C = 60A 2 120 90 T J = 125º C 60 30A 25º C 1.5 30 15A 1 -40º C 0 5 6 7 8 9 10 11 V G E - Volts © 2005 IXYS All rights reserved 12 13 14 15 4 5 6 7 V G E - Volts 8 9 10 IXGR 40N60C2 IXGR 40N60C2D1 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 70 125º C 40 30 20 I C = 60A TJ = 125º C VG E = 15V VC E = 400V 1.4 25º C 50 g f s - Siemens 1.6 T J = -40º C E off - milliJoules 60 1.8 1.2 1 I C = 45A 0.8 0.6 I C = 30A 0.4 10 0.2 0 I C = 15A 0 0 30 60 90 120 150 180 2 4 6 I C - Amperes Fig. 9. Dependence of Eoff on I c 1.6 R G = 3 Ohms R G= 10 Ohms - - - - - E off - milliJoules E off - MilliJoules T J = 125ºC 0.6 0.2 16 I C = 60A 1 0.8 I C = 45A 0.6 I C = 30A 0.4 0.4 0.2 T J = 25ºC I C = 15A 0 0 10 20 30 40 50 25 60 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 12. Capacitance Fig. 11. Gate Charge 10000 15 f = 1M Hz Capacitance - p F VC E = 300V I C = 30A I G = 10mA 12 VG E - Volts 14 VG E = 15V VC E = 400V 1.2 1 0.8 12 R G = 3 Ohms R G = 10 Ohms - - - - - 1.4 VG E = 15V VC E = 400V 1.2 10 Fig. 10. Dependence of Eoff on Temperature 1.6 1.4 8 R G - Ohms 9 6 C ies 1000 C oes 100 3 C res 0 10 0 20 40 60 80 100 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. 0 5 10 15 20 25 V C E - Volts 30 35 40 IXGR 40N60C2 IXGR 40N60C2D1 Fig. 13. Maximum Transient Thermal Resistance 0.8 0.7 R (th) J C - (ºC/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 Pulse Width - milliseconds © 2005 IXYS All rights reserved 1000 IXGR 40N60C2 IXGR 40N60C2D1 60 A 50 IF 30 1000 T = 100°C VJ nC VR = 300V 40 TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 800 Qr TVJ= 100°C VR = 300V A IF= 60A IF= 30A IF= 15A IRM 20 600 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V VF Fig. 14. Forward current IF versus VF 0 A/μs 1000 -diF/dt Fig. 15. Reverse recovery charge Qr versus -diF/dt 90 2.0 tfr 80 1.0 IF= 60A IF= 30A IF= 15A IRM 400 600 A/μs 800 1000 -diF/dt Fig. 16. Peak reverse current IRM versus -diF/dt VFR 15 trr Kf 200 20 TVJ= 100°C IF = 30A V TVJ= 100°C VR = 300V ns 1.5 0 1.00 VFR μs tfr 0.75 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/μs -diF/dt Fig. 17. Dynamic parameters Qr, IRM versus TVJ Fig. 18. Recovery time trr versus -diF/dt 1 K/W 1 ZthJC - K/W 0.1 ZthJC 0.1 0.01 0.01 0.001 0.00001 0.001 0.0001 DSEP 29-06 0.0001 0.001 0.001 0.01 0.01 0.1 0.1 Time - Seconds Fig. 20. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. s t 1 1 0 200 400 0.00 600 A/μs 800 1000 diF/dt Fig. 19. Peak forward voltage VFR and tfr versus diF/dt