IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES ± 1200 V ± 20 V 55 35 A A IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 80 600 A V Ptot TC = 25°C 300 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V QGon VCE = 120V; VGE = 15 V; IC = 35 A 2.3 2.8 4 2.7 V V 8 V 50 µA mA 500 nA 3.0 90 • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epoxy of TO-247 package meets UL 94V-0 Applications converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path nC 0526 Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-5 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXRH 40N120 TO-247 AD Outline IGBT Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) typ. External diode DSEP30-12 - diagram see Fig. 17 td(on) tr td(off) tf Eon Eoff Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 Ω 31 54 184 24 3.0 0.7 ns ns ns ns mJ mJ 29.5 47 183 46 19.2 1.0 7 ns ns ns ns mJ mJ mJ 28.5 2.1 A µs Internal diode - diagram see Fig. 18 Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 Ω IRM t rr IF = 35 A; diC/dt = -50 A/µs; TVJ = 125°C VCE = -600 V; VGE = 15 V RthJC 0.42 K/W Component Symbol Conditions TVJ Tstg Md FC mounting torque mounting force with clip Symbol Conditions RthCH with heatsink compound Maximum Ratings -55...+150 -55...+125 °C °C 0.8 - 1.2 20...120 Nm N Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Characteristic Values min. typ. max. Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Dim. 0.25 K/W 6 g 0526 td(on) tr td(off) tf Eon Eoff Erec int 2-5 IXRH 40N120 70 VGE = 19 17 15 13 11 TJ = 25°C A 60 VGE = 19 V TJ = 125°C A 60 17 V 15 V 13 V 50 11 V IC IC 50 70 V V V V V 40 40 30 30 20 20 10 10 9V 0 0 2 4 6 9V 0 8 V 0 2 4 VCE Fig. 1 Typical output characteristics 8 V Fig. 2 Typical output characteristics 5 90 VCE = 20 V A 80 VGE = 15 V V 4 70 60 IC = 70 A VCE 3 50 IC = 35 A 40 2 TJ = 125°C 30 IC = 17.5 A 20 TJ = 25°C 10 1 TJ = -40°C 0 0 5 6 7 8 9 10 11 V 12 -50 13 -25 0 25 50 Fig. 3 Typical transfer characteristics VCE = 600 V VGE = ±15 V 12 tr RG = 15 Ω TJ = 125°C Eon °C 150 100 125 Fig. 4 Typ. collector emitter saturation as a function of case temperature 15 mJ 75 TVJ VGE 350 3 ns 280 mJ t 9 240 ns td(off) Eoff 160 t 2 210 6 VCE = 600 V VGE = ±15 V 140 RG = 15 Ω TJ = 125°C 1 Eon 3 Eoff 70 tf td(on) 0 0 0 10 20 30 40 50 60 70 A IC Fig. 5 Typ. turn on energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (Fig. 17) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 80 0 0 0 10 20 30 40 50 60 70 A IC Fig. 6 Typ. turn off energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (Fig. 17) 0526 IC 6 VCE 3-5 IXRH 40N120 14 mJ 12 Eon 10 4 140 tr VCE = 600 V VGE = ±15 V IC = 35 A TJ = 125°C td(on) mJ ns 120 100 t 8 800 VCE = 600 V VGE = ±15 V IC = 35 A TJ = 125°C 3 Eoff ns 600 td(off) 80 2 6 60 4 40 20 0 0 0 20 40 Eoff 200 tf 0 80 Ω 100 60 400 1 Eon 2 0 20 40 RG 50 Fig. 8 Typ. turn off energy and switching times vs. gate resistor, inductive switching with ext. free wheeling diode (Fig. 17) 6 150 VCE = 600 V VGE = ±15 V 40 Eon Erecint ns RG = 15 Ω TJ = 125°C tr 240 td(off) mJ 120 t 30 Eoff Eon 4 90 VCE = 600 V VGE = ±15 V 60 RG = 15 Ω TJ = 125°C 2 10 160 t 80 30 0 20 int 40 60 80 Eoff 0 0 0 A 20 40 60 IC IC Fig. 9 Typ. turn on energy and switching times vs. collector current, inductive switching with internal diode (Fig. 18) 30 Fig. 10 Typ. turn off energy and switching times vs. collector current, inductive switching with internal diode (Fig. 18) 3 150 tr mJ 25 td(on) 20 Eon VCE = 600 V VGE = ±15 V IC = 35 A TJ = 125°C 15 10 Erecint 100 50 0 0 40 t 80 Ω 100 60 RG Fig. 11 Typ. turn on energy and switching times vs. gate resistor, inductive switching with internal diode (Fig. 18) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Eoff 2 ns td(off) 600 t 75 25 20 900 VCE = 600 V VGE = ±15 V IC = 35 A TJ = 125°C mJ ns 125 5 0 0 100 A 80 Eoff 1 300 tf 0 0 20 40 60 80 0 Ω RG Fig. 12 Typ. turn off energy and switching times vs. gate resistor, inductive switching with internal diode (Fig. 18) 0526 Erec 0 Eon ns tf td(on) 20 0 80 Ω 100 60 RG Fig. 7 Typ. turn on energy and switching times vs. gate resistor, inductive switching with ext. free wheeling diode (Fig. 17) mJ t 4-5 IXRH 40N120 60 A 50 36 2400 VCE = -600 V VGE = ±15 V IC = 35 A TJ = 125°C trr 35 2100 t IRM VCE = -600 V VGE = ±15 V TJ = 125°C C ns Qrr 34 1800 33 40 1500 32 30 IRM 20 0 100 200 300 400 1200 31 900 30 0 500 A/µs 100 200 300 400 500 A/µs diF/dt diF/dt Fig. 13 Typ. turn off characteristics of the internal diode Fig. 14 Typ. turn off characteristics of the internal diode 20 0.45 V 0.4 16 K/W 0.3 12 VGE ZthJC 0.2 VCE = 120 V IC = 35 A 8 0.1 4 0.04 0.08 0.12 0.0 0.001 C 0.16 IXRH40N120 0.01 0.1 1 QG Fig. 16 Typ. transient thermal impedance Fig. 15 Typical gate charge Ri 0.034 τ 0.0001 0.048 0.0035 0.092 0.02 0.174 0.142 U current sensing Inductance U Inductance Gate Resistor Device under test Driver U current sensing Fig. 17 turn-on/turn-off with external diode (DSEP 30-12) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved IGBT is on Voltage source 0.075 0.18 current sensing +15 V Free wheeling diode Voltage source 10 s t DUT DUT Gate Resistor Driver Fig. 18 turn-on/turn-off with internal diode 0526 0 0.00 5-5