IXYS IXRH40N120

IXRH 40N120
VCES = ±1200 V
IC25
= 55 A
VCE(sat) = 2.3 V typ.
IGBT with Reverse
Blocking capability
C
TO-247 AD
G
C
E
G
E
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
IGBT
Conditions
VCES
TVJ = 25°C to 150°C
Maximum Ratings
VGES
± 1200
V
± 20
V
55
35
A
A
IC25
IC90
TC = 25°C
TC = 90°C
ICM
VCEK
VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
80
600
A
V
Ptot
TC = 25°C
300
W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 30 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 2 mA; VGE = VCE
ICES
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IGES
VCE = 0 V; VGE = ± 20 V
QGon
VCE = 120V; VGE = 15 V; IC = 35 A
2.3
2.8
4
2.7
V
V
8
V
50
µA
mA
500
nA
3.0
90
• IGBT with NPT (non punch through)
structure
• reverse blocking capability
- function of series diode monolithically
integrated, no external series diode
required
- soft reverse recovery
• positive temperature coefficient of
saturation voltage
• Epoxy of TO-247 package meets
UL 94V-0
Applications
converters requiring reverse blocking
capability:
- current source inverters
- matrix converters
- bi-directional switches
- resonant converters
- induction heating
- auxiliary switches for soft switching
in the main current path
nC
0526
Symbol
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-5
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXRH 40N120
TO-247 AD Outline
IGBT
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
typ.
External diode DSEP30-12 - diagram see Fig. 17
td(on)
tr
td(off)
tf
Eon
Eoff
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 15 Ω
31
54
184
24
3.0
0.7
ns
ns
ns
ns
mJ
mJ
29.5
47
183
46
19.2
1.0
7
ns
ns
ns
ns
mJ
mJ
mJ
28.5
2.1
A
µs
Internal diode - diagram see Fig. 18
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 15 Ω
IRM
t rr
IF = 35 A; diC/dt = -50 A/µs; TVJ = 125°C
VCE = -600 V; VGE = 15 V
RthJC
0.42 K/W
Component
Symbol
Conditions
TVJ
Tstg
Md
FC
mounting torque
mounting force with clip
Symbol
Conditions
RthCH
with heatsink compound
Maximum Ratings
-55...+150
-55...+125
°C
°C
0.8 - 1.2
20...120
Nm
N
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Characteristic Values
min.
typ. max.
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
Dim.
0.25
K/W
6
g
0526
td(on)
tr
td(off)
tf
Eon
Eoff
Erec int
2-5
IXRH 40N120
70
VGE = 19
17
15
13
11
TJ = 25°C
A
60
VGE =
19 V
TJ = 125°C
A
60
17 V
15 V
13 V
50
11 V
IC
IC
50
70
V
V
V
V
V
40
40
30
30
20
20
10
10
9V
0
0
2
4
6
9V
0
8
V
0
2
4
VCE
Fig. 1 Typical output characteristics
8
V
Fig. 2 Typical output characteristics
5
90
VCE = 20 V
A
80
VGE = 15 V
V
4
70
60
IC = 70 A
VCE
3
50
IC = 35 A
40
2
TJ = 125°C
30
IC = 17.5 A
20
TJ = 25°C
10
1
TJ = -40°C
0
0
5
6
7
8
9
10
11
V
12
-50
13
-25
0
25
50
Fig. 3 Typical transfer characteristics
VCE = 600 V
VGE = ±15 V
12
tr
RG = 15 Ω
TJ = 125°C
Eon
°C 150
100 125
Fig. 4 Typ. collector emitter saturation
as a function of case temperature
15
mJ
75
TVJ
VGE
350
3
ns
280
mJ
t
9
240
ns
td(off)
Eoff
160 t
2
210
6
VCE = 600 V
VGE = ±15 V
140
RG = 15 Ω
TJ = 125°C
1
Eon
3
Eoff
70
tf
td(on)
0
0
0
10
20
30
40
50
60
70
A
IC
Fig. 5 Typ. turn on energy and switching times
vs. collector current, inductive switching
with ext. free wheeling diode (Fig. 17)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
80
0
0
0
10
20
30
40
50
60
70
A
IC
Fig. 6 Typ. turn off energy and switching times vs.
collector current, inductive switching
with ext. free wheeling diode (Fig. 17)
0526
IC
6
VCE
3-5
IXRH 40N120
14
mJ
12
Eon 10
4
140
tr
VCE = 600 V
VGE = ±15 V
IC = 35 A
TJ = 125°C
td(on)
mJ
ns
120
100 t
8
800
VCE = 600 V
VGE = ±15 V
IC = 35 A
TJ = 125°C
3
Eoff
ns
600
td(off)
80
2
6
60
4
40
20
0
0
0
20
40
Eoff
200
tf
0
80 Ω 100
60
400
1
Eon
2
0
20
40
RG
50
Fig. 8 Typ. turn off energy and switching times
vs. gate resistor, inductive switching
with ext. free wheeling diode (Fig. 17)
6
150
VCE = 600 V
VGE = ±15 V
40
Eon
Erecint
ns
RG = 15 Ω
TJ = 125°C
tr
240
td(off)
mJ
120
t
30
Eoff
Eon
4
90
VCE = 600 V
VGE = ±15 V
60
RG = 15 Ω
TJ = 125°C
2
10
160 t
80
30
0
20
int
40
60
80
Eoff
0
0
0
A
20
40
60
IC
IC
Fig. 9 Typ. turn on energy and switching times
vs. collector current, inductive switching
with internal diode (Fig. 18)
30
Fig. 10 Typ. turn off energy and switching times
vs. collector current, inductive switching
with internal diode (Fig. 18)
3
150
tr
mJ
25
td(on)
20
Eon
VCE = 600 V
VGE = ±15 V
IC = 35 A
TJ = 125°C
15
10
Erecint
100
50
0
0
40
t
80 Ω 100
60
RG
Fig. 11 Typ. turn on energy and switching times
vs. gate resistor, inductive switching
with internal diode (Fig. 18)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
Eoff
2
ns
td(off)
600
t
75
25
20
900
VCE = 600 V
VGE = ±15 V
IC = 35 A
TJ = 125°C
mJ
ns
125
5
0
0
100
A
80
Eoff
1
300
tf
0
0
20
40
60
80
0
Ω
RG
Fig. 12 Typ. turn off energy and switching times
vs. gate resistor, inductive switching
with internal diode (Fig. 18)
0526
Erec
0
Eon
ns
tf
td(on)
20
0
80 Ω 100
60
RG
Fig. 7 Typ. turn on energy and switching times
vs. gate resistor, inductive switching
with ext. free wheeling diode (Fig. 17)
mJ
t
4-5
IXRH 40N120
60
A
50
36
2400
VCE = -600 V
VGE = ±15 V
IC = 35 A
TJ = 125°C
trr
35
2100
t
IRM
VCE = -600 V
VGE = ±15 V
TJ = 125°C
C
ns
Qrr
34
1800
33
40
1500
32
30
IRM
20
0
100
200
300
400
1200
31
900
30
0
500 A/µs
100
200
300
400
500 A/µs
diF/dt
diF/dt
Fig. 13 Typ. turn off characteristics
of the internal diode
Fig. 14 Typ. turn off characteristics
of the internal diode
20
0.45
V
0.4
16
K/W
0.3
12
VGE
ZthJC
0.2
VCE = 120 V
IC = 35 A
8
0.1
4
0.04
0.08
0.12
0.0
0.001
C
0.16
IXRH40N120
0.01
0.1
1
QG
Fig. 16 Typ. transient thermal impedance
Fig. 15 Typical gate charge
Ri 0.034
τ 0.0001
0.048
0.0035
0.092
0.02
0.174
0.142
U
current
sensing
Inductance
U
Inductance
Gate
Resistor
Device
under
test
Driver
U
current
sensing
Fig. 17 turn-on/turn-off with
external diode (DSEP 30-12)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
IGBT
is on
Voltage
source
0.075
0.18
current
sensing
+15 V
Free
wheeling
diode
Voltage
source
10
s
t
DUT
DUT
Gate
Resistor
Driver
Fig. 18 turn-on/turn-off with internal diode
0526
0
0.00
5-5