IXYS IXTA260N055T2-7

Preliminary Technical Information
TrenchT2TM
Power MOSFET
IXTA260N055T2-7
VDSS
ID25
= 55V
= 260A
Ω
≤ 3.3mΩ
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (7-lead)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
55
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
55
V
VGSM
Transient
± 20
V
ID25
TC = 25°C
260
A
ILRMS
Lead Current Limit, RMS
160
A
IDM
TC = 25°C, pulse width limited by TJM
780
A
IA
TC = 25°C
100
A
EAS
TC = 25°C
600
mJ
PD
TC = 25°C
480
W
-55 ... +175
°C
TJ
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
3
g
TL
Tsold
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Weight
1
7
(TAB)
Pins: 1 - Gate
2, 3 - Source
5,6,7 - Source
TAB (8) - Drain
Features
z
z
z
z
z
International standard package
175°C Operating Temperature
High current handling capability
Avalanche rated
Low RDS(on)
Advantages
z
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
55
VGS(th)
VDS = VGS, ID = 250μA
2.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
TJ = 150°C
VGS = 10V, ID = 50A, Notes 1, 2
z
z
V
4.0
V
±200
nA
5
μA
150
μA
3.3 mΩ
pplications
z
z
z
z
© 2008 IXYS CORPORATION, All rights reserved
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching Applications
DS100071(11/08)
IXTA260N055T2-7
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS = 10V, ID = 60A, Note 1
55
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 2Ω (External)
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
TO-263 (7-lead) (IXTA..7) Outline
94
S
10.8
nF
1460
pF
215
pF
20
ns
27
ns
36
ns
24
ns
140
nC
52
nC
32
nC
0.31 °C/W
RthJC
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse width limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IRM
QRM
260
A
1000
A
1.3
V
60
IF = 130A, VGS = 0V
-di/dt = 100A/μs
VR = 27V
ns
3.4
A
102
nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA260N055T2-7
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
350
260
VGS = 15V
10V
9V
8V
240
220
200
8V
250
ID - Amperes
180
ID - Amperes
VGS = 15V
10V
9V
300
160
140
7V
120
100
80
40
7V
150
6V
100
6V
60
200
50
5V
5V
20
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.9
0.4
0.8
1.2
Fig. 3. Output Characteristics
@ 150ºC
2.4
2.8
3.2
3.6
2.2
VGS = 15V
10V
9V
8V
240
220
200
VGS = 10V
2.0
RDS(on) - Normalized
1.8
180
ID - Amperes
2.0
Fig. 4. RDS(on) Normalized to ID = 130A Value
vs. Junction Temperature
260
7V
160
140
120
100
6V
80
I D = 260A
1.6
I D = 130A
1.4
1.2
1.0
60
40
0.8
5V
20
0
0.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
VDS - Volts
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 130A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
2.2
External Lead Current Limit
2.1
160
TJ = 175ºC
2.0
140
1.9
1.8
120
1.7
ID - Amperes
RDS(on) - Normalized
1.6
VDS - Volts
VDS - Volts
VGS = 10V
1.6
15V - - - -
1.5
1.4
1.3
100
80
60
1.2
TJ = 25ºC
1.1
40
1.0
20
0.9
0
0.8
0
50
100
150
200
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
250
300
350
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
200
IXTA260N055T2-7
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
140
TJ = - 40ºC
180
120
25ºC
160
100
g f s - Siemens
ID - Amperes
140
120
100
TJ = 150ºC
25ºC
- 40ºC
80
60
150ºC
80
60
40
40
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
20
40
60
80
VGS - Volts
100
120
140
160
180
200
220
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
360
VDS = 28V
9
320
I D = 130A
8
280
I G = 10mA
6
VGS - Volts
IS - Amperes
7
240
200
160
5
4
TJ = 150ºC
120
3
80
TJ = 25ºC
2
40
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
10
20
30
Fig. 11. Capacitance
50
60
70
80
90 100 110 120 130 140
Fig. 12. Forward-Bias Safe Operating Area
1,000
100,000
RDS(on) Limit
f = 1 MHz
25µs
Ciss
10,000
I D - Amperes
Capacitance - PicoFarads
40
QG - NanoCoulombs
VSD - Volts
Coss
1,000
100µs
100
External Lead Current Limit
1ms
10
TJ = 175ºC
Crss
10ms
100ms
TC = 25ºC
Single Pulse
100
DC
1
0
5
10
15
20
25
30
35
40
VDS - Volts
1
10
100
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_260N055T2(V6)11-10-08-A
IXTA260N055T2-7
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
350
260
VGS = 15V
10V
9V
8V
240
220
200
8V
250
ID - Amperes
180
ID - Amperes
VGS = 15V
10V
9V
300
160
140
7V
120
100
80
40
7V
150
6V
100
6V
60
200
50
5V
5V
20
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.9
0.4
0.8
1.2
Fig. 3. Output Characteristics
@ 150ºC
2.4
2.8
3.2
3.6
2.2
VGS = 15V
10V
9V
8V
240
220
200
VGS = 10V
2.0
RDS(on) - Normalized
1.8
180
ID - Amperes
2.0
Fig. 4. RDS(on) Normalized to ID = 130A Value
vs. Junction Temperature
260
7V
160
140
120
100
6V
80
I D = 260A
1.6
I D = 130A
1.4
1.2
1.0
60
40
0.8
5V
20
0
0.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
VDS - Volts
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 130A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
90
2.2
2.1
TJ = 175ºC
2.0
External Lead Current Limit
80
1.9
70
1.8
1.7
ID - Amperes
RDS(on) - Normalized
1.6
VDS - Volts
VDS - Volts
VGS = 10V
1.6
15V - - - -
1.5
1.4
1.3
60
50
40
30
1.2
TJ = 25ºC
1.1
20
1.0
10
0.9
0
0.8
0
50
100
150
200
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
250
300
350
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
200
IXTA260N055T2-7
Fig. 19. Maximum Transient Thermal Impedance
1.000
Z (th )J C - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_260N055T2(V6)11-10-08-A