IXYS IXFN56N90P

Preliminary Technical Information
IXFN56N90P
PolarTM Power MOSFET
HiPerFETTM
VDSS
ID25
=
=
≤
≤
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
900
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
900
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
56
A
IDM
TC = 25°C, pulse width limited by TJM
168
A
IA
TC = 25°C
28
A
EAS
TC = 25°C
2
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
1000
W
-55 ... +150
°C
150
°C
z
-55 ... +150
°C
z
300
°C
z
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
TJ
TJM
Tstg
TL
1.6mm (0.062 in.) from case for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting torque
Terminal connection torque
S
G
S
D
G = Gate
S = Source
Weight
30
g
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z
t = 1min
t = 1s
900V
56A
Ω
135mΩ
300ns
z
International standard package
miniBLOC, with Aluminium nitride
isolation
Avalanche Rated
Low package inductance
Fast intrinsic diode
Advantages
z
z
Low gate drive requirement
High power density
Applications:
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 8mA
900
VGS(th)
VDS = VGS, ID = 3mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 28A, Note 1
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
V
6.5
V
± 200
nA
z
z
z
z
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
50 μA
5 mA
135 mΩ
DS100066(10/08)
IXFN56N90P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 28A, Note 1
27
RGi
44
S
Gate input resistance
0.85
Ω
23
nF
VGS = 0V, VDS = 25V, f = 1MHz
1385
pF
106
pF
Ciss
Coss
SOT-227B (IXFN) Outline
Crss
td(on)
Resistive Switching Times
74
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
80
ns
td(off)
RG = 1Ω (External)
93
ns
38
ns
375
nC
80
nC
145
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
0.125 °C/W
RthJC
RthCS
0.05
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
(M4 screws (4x) supplied)
°C/W
Characteristic Values
Min.
Typ.
Max.
56
A
Repetitive, pulse width limited by TJM
224
A
IF = IS, VGS = 0V, Note 1
1.5
V
300
ns
IF = 28A, -di/dt = 100A/μs
VR = 100V
1.8
μC
15
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN56N90P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
120
VGS = 10V
9V
VGS = 10V
9V
100
40
8V
ID - Amperes
ID - Amperes
50
30
7V
20
80
8V
60
40
10
7V
20
6V
6V
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
15
18
21
24
27
30
Fig. 4. RDS(on) Normalized to ID = 28A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
2.8
60
VGS = 10V
8V
2.6
VGS = 10V
2.4
RDS(on) - Normalized
50
ID - Amperes
12
VDS - Volts
VDS - Volts
40
7V
30
20
2.2
2.0
I D = 56A
1.8
I D = 28A
1.6
1.4
1.2
1.0
6V
10
0.8
0.6
5V
0
0.4
0
2
4
6
8
10
12
14
16
18
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 28A Value
vs. Drain Current
50
75
100
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
60
2.6
VGS = 10V
2.4
50
TJ = 125ºC
2.2
40
2.0
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.6
30
20
1.4
1.2
10
TJ = 25ºC
1.0
0.8
0
0
10
20
30
40
50
60
70
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
80
90
100
110
120
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFN56N90P
Fig. 7. Input Admittance
Fig. 8. Transconductance
90
90
80
80
70
70
50
g f s - Siemens
TJ = 125ºC
25ºC
- 40ºC
60
ID - Amperes
TJ = - 40ºC
40
30
125ºC
50
40
30
20
20
10
10
0
25ºC
60
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0
8.5
10
20
VGS - Volts
30
40
50
60
70
80
90
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
180
160
9
VDS = 450V
8
I G = 10mA
I D = 28A
140
VGS - Volts
IS - Amperes
7
120
100
80
60
TJ = 125ºC
6
5
4
3
40
2
TJ = 25ºC
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
50
100
VSD - Volts
200
250
300
350
400
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
Ciss
10,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
150
QG - NanoCoulombs
1,000
Coss
0.100
0.010
100
Crss
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_56N90P(99)10-24-08