Preliminary Technical Information IXTP64N055T IXTY64N055T TrenchMVTM Power MOSFET VDSS ID25 = = RDS(on) ≤ 55 V 64 A Ω 13 mΩ N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) G Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM D (TAB) D S 55 55 V V Transient ± 20 V ID25 IL IDM TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM 64 25 170 A A A G IAR EAS TC = 25°C TC = 25°C 10 250 A mJ G = Gate S = Source 3 V/ns 130 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω PD TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-252 1.13 / 10 Nm/lb.in. 3 0.35 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 55 VGS(th) VDS = VGS, ID = 25 μA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) g g TJ = 150°C VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 V 4.0 V ± 100 nA 1 100 μA μA 13 mΩ TO-252 (IXTY) S D (TAB) D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99498 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTP64N055T IXTY64N055T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, Note 1 17 Ciss Coss TO-220 (IXTP) Outline 28 S 1420 pF 255 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 68 pF td(on) 19 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 52 ns td(off) RG = 18Ω (External) 37 ns tf 30 ns Qg(on) 37 nC Pins: Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A Qgd 10 nC 11 nC 2 - Drain 4, TAB - Drain 1.15 °C/W RthJC RthCS 1 - Gate 3 - Source TO-220 °C/W 0.5 Source-Drain Diode Symbol Test Conditions Values (TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Repetitive VSD IF =25 A, VGS = 0 V, Note 1 t rr IF = 25 A, -di/dt = 100 A/μs Characteristic Min. Typ. Max. 64 A 170 A 1.2 V 30 ns VR = 30 V, VGS = 0 V Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-252 (IXTY) Outline Dim. 1 Anode 2 NC 3 Anode 4 Cathode A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 0.090 0.180 0.370 0.020 0.025 0.035 0.100 PRELIMINARYTECHNICAL INFORMATION 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 BSC BSC 0.410 0.040 0.040 0.050 0.115 The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTP64N055T IXTY64N055T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 65 VGS = 10V 9V 8V 60 55 160 50 9V 140 ID - Amperes 45 ID - Amperes V GS = 10V 180 40 35 7V 30 25 120 8V 100 7V 80 6V 20 60 15 6V 40 10 5V 5 5V 20 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 6 8 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 2.4 65 V GS = 10V 9V 8V 60 55 V GS = 10V 2.2 2 RDS(on) - Normalized 50 45 ID - Amperes 10 VDS - Volts VDS - Volts 40 35 7V 30 25 6V 20 15 1.8 1.6 I D = 64A 1.4 I D = 32A 1.2 1 10 5V 0.8 5 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 70 3.2 VGS = 10V 15V - - - - 3 60 TJ = 175ºC 2.6 50 ID - Amperes RDS(on) - Normalized 2.8 2.4 2.2 2 1.8 40 30 1.6 1.4 20 1.2 1 10 TJ = 25ºC 0.8 0.6 0 0 20 40 60 80 100 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 120 140 160 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXTP64N055T IXTY64N055T Fig. 8. Transconductance Fig. 7. Input Admittance 40 80 35 30 g f s - Siemens 60 ID - Amperes TJ = - 40ºC TJ = - 40ºC 25ºC 150ºC 70 50 40 30 25 150ºC 20 15 20 10 10 5 0 25ºC 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 10 20 VGS - Volts 40 50 60 70 80 90 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 140 10 VDS = 27.5V 9 120 I D = 10A 8 100 I G = 1mA 7 VGS - Volts IS - Amperes 30 80 60 6 5 4 TJ = 150ºC 3 40 2 TJ = 25ºC 20 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 5 10 VSD - Volts 15 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10.00 10,000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1.00 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTP64N055T IXTY64N055T Fig. 14. Resistiv e Turn-on Rise Time v s. Drain Current Fig. 13. Resistiv e Turn-on Rise Time v s. Junction Temperature 65 65 RG = 18 Ω 60 60 TJ = 25ºC V GS = 10V 55 V DS = 27.5V t r - Nanoseconds t r - Nanoseconds 55 50 45 40 I D = 30A 35 I D = 10A 30 RG = 18 Ω 50 V GS = 10V 45 V DS = 27.5V 40 35 30 TJ = 125ºC 25 25 20 20 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 T J - Degrees Centigrade Fig. 15. Resistiv e Turn-on Switching Times v s. Gate Resistance 22 24 26 28 30 30 42 54 28 40 50 38 46 td(on) - - - - TJ = 125ºC, V GS = 10V 22 40 20 30 42 I D = 10A 34 38 32 34 I D = 30A 30 18 td(off) - - - - tf RG = 18 Ω , V GS = 10V 28 30 - Nanoseconds I D = 10A 50 36 d(off) 24 - Nanoseconds 60 d(on) 26 I D = 30A t t V DS = 27.5V 70 t f - Nanoseconds tr t r - Nanoseconds 20 Fig. 16. Resistiv e Turn-off Switching Times v s. Junction Temperature 90 80 18 I D - Amperes 26 V DS = 27.5V 20 16 15 20 25 30 35 40 45 50 55 26 60 25 35 R G - Ohms 58 22 125 30 38 28 34 TJ = 25ºC 26 30 22 24 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 26 28 30 t f - Nanoseconds 100 80 90 I D = 10A 70 80 60 70 I D = 30A 50 60 40 50 30 40 20 - Nanoseconds 42 110 90 d(off) TJ = 125ºC 32 120 t 46 - Nanoseconds 34 d(off) t f - Nanoseconds 115 V DS = 27.5V t 50 20 105 TJ = 125ºC, V GS = 10V 100 V DS = 27.5V 18 95 130 54 36 16 85 td(off) - - - - tf 110 RG = 18 Ω , V GS = 10V 14 75 120 td(off) - - - - tf 12 65 Fig. 18. Resistiv e Turn-off Switching Times v s. Gate Resistance 40 10 55 T J - Degrees Centigrade Fig. 17. Resistiv e Turn-off Switching Times v s. Drain Current 38 45 30 15 20 25 30 35 40 45 50 55 60 R G - Ohms IXYS REF: T_64N055T (1V) 7-14-06.xls