IXYS IXTQ30N60P

PolarHVTM
Power MOSFET
VDSS = 600
V
ID25 = 30
A
RDS(on) ≤ 240 m Ω
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
30
A
IDM
TC = 25° C, pulse width limited by TJM
80
A
IAR
TC = 25° C
30
A
EAR
TC = 25° C
50
mJ
EAS
TC = 25° C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
Maximum Ratings
TC = 25° C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
FC
Mounting torque
Mounting force
Weight
TO-247
TO-3P
PLUS220
TO-268
(TO-3P, TO-247)
(PLUS220)
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb.
6.0
5.5
4.0
5.0
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
g
g
g
g
G
VGS = 0 V, ID = 250 µA
600
VGS(th)
VDS = VGS, ID = 250µA
3.0
IGSS
VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
TJ = 125° C
V
±100
nA
25
250
µA
µA
240
mΩ
S
TO-3P (IXTQ)
G
D
D (TAB)
S
TO-268 (IXTT)
G
S
D (TAB)
PLUS220 (IXTV)
G
D
D (TAB)
S
PLUS220 (IXTV...S)
G
V
5.0
D (TAB)
D
Characteristic Values
Min. Typ.
Max.
BVDSS
© 2006 IXYS All rights reserved
540
TO-247 (IXTH)
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
l
Fast Recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
International standard packages
l
Low package inductance
- easy to drive and to protect
DS99251E(12/05)
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
22
Ciss
25
S
5050
pF
540
pF
53
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
Crss
td(on)
29
ns
tr
VGS = 10 V, VDS = 0.5 ID25
20
ns
td(off)
RG = 4 Ω (External)
80
ns
25
ns
82
nC
28
nC
30
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.23 ° C/W
RthJC
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
30
A
ISM
Repetitive
80
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
500
ns
QRM
VR = 100V
4.0
µC
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
30
60
VGS = 10V
27
VGS = 10V
55
8V
7V
24
8V
7V
50
45
21
6.5V
I D - Amperes
I D - Amperes
° C/W
0.21
RthCS
18
15
6V
12
9
6.5V
35
30
25
6V
20
15
5.5V
6
40
10
3
5V
5.5V
5
0
5V
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12
15
18
21
24
V D S - Volts
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
27
30
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Fig. 3. Output Characteristics
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
@ 125ºC
30
3.4
VGS = 10V
27
3.1
7V
21
R D S ( o n ) - Normalized
I D - Amperes
24
6V
18
5.5V
15
12
9
5V
6
3
VGS = 10V
2.8
2.5
2.2
1.9
I D = 30A
1.6
I D = 15A
1.3
1
0.7
4.5V
0
0.4
0
2
4
6
8
10
V D S - Volts
12
14
16
18
-50
-25
100
125
150
30
TJ = 125º C
2.4
25
I D - Amperes
R D S ( o n ) - Normalized
75
35
3
VGS = 10V
50
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
2.6
25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
2.8
0
2.2
2
1.8
1.6
20
15
10
1.4
1.2
TJ = 25º C
5
1
0
0.8
0
5
10 15 20 25
30 35 40 45
I D - Amperes
-50
50 55 60
-25
0
25
50
75
100
125
150
35
40
TC - Degrees Centigrade
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
35
50
45
30
40
g f s - Siemens
I D - Amperes
25
20
15
10
TJ = 125º C
5
-40º C
25º C
TJ = -40º C
35
25º C
30
125º C
25
20
15
10
5
0
0
3.5
4
4.5
5
5.5
V G S - Volts
© 2006 IXYS All rights reserved
6
6.5
7
0
5
10
15
20
25
I D - Amperes
30
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Fig. 9. Source Curre nt vs .
Source -To-Drain V oltage
Fig. 10. Gate Charge
90
10
80
9
60
V G S - Volts
I S - Amperes
70
50
40
TJ = 125 º C
30
V DS = 300V
8
I D = 15A
7
I G = 10m A
6
5
4
3
20
TJ = 25 º C
2
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
20
40
V S D - V olts
60
80
100
120
140
160
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Ope rating Are a
Fig. 11. Capacitance
10000
100
25µs
C iss
1000
I D - Amperes
Capacitance - picoFarads
R DS(on) Lim it
C oss
100
100µs
1m s
10
10m s
DC
TJ = 150ºC
f = 1MH z
C rss
TC = 25ºC
1
10
0
5
10
15
20
25
30
35
10
40
100
V D S - V olts
1000
V D S - V olts
Fig. 13. Maximum Transient Thermal Resistance
R ( t h ) J C - ºC / W
1.00
0.10
0.01
0.1
1
10
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
100
1000
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Package Outline Drawings
TO-247AD (IXTH) Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXTT) Outline
© 2006 IXYS All rights reserved
TO-3P (IXTQ) Outline
PLUS220 (IXTV) Outline
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Package Outline Drawings
PLUS220SMD (IXTV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.