Agilent HMMC-3040 20 – 43 GHz Double-Balanced Mixer and LO-Amplifier Data Sheet Features • Both up and downconverting functions • Harmonic LO mixing capability • Large bandwidth: Chip Size: 2520 x 730 µm (99.2 x 28.7 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) RF port: 20–43 GHz LO port match: DC–43 GHz LO amplifier: 20–43 GHz IF port: DC–5 GHz • Repeatable conversion loss: 9.5 dB typical at 30 GHz • Low LO drive required • 50Ω port matching networks Description The HMMC-3040 is a broadband MMIC Double-Balanced Mixer (DBM) with an integrated highgain LO amplifier. It can be used as either an up-converter or as a down-converter in microwave/ millimeter-wave transceivers. If desired, the LO amplifier can be biased to function as a frequency multiplier to enable harmonic mixing of a LO source. This three-port device has input and output matching circuitry for use in 50 ohm environments. The MMIC provides repeatable conversion loss (requiring no tuning), thereby making it suitable for automated assembly processes. Absolute Maximum Ratings [1] Symbol Parameters/Conditions Units Min. Max. VD1,2 Drain Supply Voltages V VG1,2 Gate Supply Voltages V IDD Total Drain Current mA 400 Pin RF Input Power dBm 21 Tch Channel Temperature[2] °C 160 TA Backside Ambient Temperature °C -55 +75 Tst Storage Temperature °C -65 +165 Tmax Max. Assembly Temperature °C 5 -3.0 Notes: 1. Absolute maximum ratings for continuous operation unless otherwise noted. 2. Refer to DC Specifications/Physical Properties table for deratinginformation. 0.5 300 HMMC-3040 DC Specifications/Physical Properties[1] Symbol Parameters and Test Conditions Units Min. Typ. Max. VD1,2 Drain Supply Operating Voltages V 2 4.5 5 I D1 First Stage Drain Supply Current (VDD = 4.5 V, VG1 ≅ -0.8 V) mA 27 ID2 Total Drain Supply Current for Stage 2 (VDD = 4.5 V, VGG ≅ -0.8 V) mA 123 VG1,2 Gate Supply Operating Voltages (IDD ≅ 150mA) V -0.8 VP Pinch-off Voltage (VDD = 4.5 V, VDD ≤ 10 mA) V θch-bs Thermal Resistance (Channel-to-Backside at Tch = 160°C)[2] °C/Watt 62 Tch Channel Temperature (TA = 75°C, MTTF > 106 hrs VDD = 4.5V, IDD = 300 mA)[3] °C 160 -2 -1.2 -0.8 Notes: 1. Backside ambient operating temperature TA = 25°C, unless otherwise noted. 2. Thermal resistance (°C/Watt) at a channel temperature T(°C) can be estimated using the equation: θ(T) ≅ 62x [T(°C)+273]/[160°C+273]. 3. Derate MTTF by a factor of two for every 8°C above Tch. RF Specifications (TA = 25°C, ZO = 50 Ω, VDD = 4.5 V, IDD = 150 mA) Symbol Parameters and Test Conditions Units Min. Typ. Max. BW Operating Bandwidth GHz GHz 20 DC 20– 43 DC – 5 43 5 C.L. Conversion Loss dB 9.5 12 PLO LO Drive Level dBm 2 dB 18 dBm dBm 15 8 RF and LO IF [1] LO/RF Isolation LO-to-RF Isolation P-1dB Input Power (@ 1 dB increase in C.L.) Down-Convert (RF/IF) Up-Convert (IF/RF) Note: 1. Reference: LO input. Does not include LO amplifier gain (-20dB). 2 Applications The HMMC-3040 MMIC is a broadband double-balanced mixer (DBM) with an integrated LO amplifier. It can be used as either a frequency up-converter or down-converter. This mixer was designed specifically for microwave/millimeter-wave point-to-point and point-tomultipoint (including LMDS/ LMCS/MVDS) communication systems that operated in the 20–43 GHz frequency range. The LO amplifier can also be biased to provide frequency multiplication of the LO source (Figure 2). The integrated LO amplifier will provide a good impedance match to low frequency input signals. Frequencies below approximately 18 GHz will not be passed by the LO network, enhancing LO rejection. Biasing and Operation The recommended DC bias condition is with all drains connected to a single 3.5–4.5 volt supply and all gates connected to an adjustable negative voltage supply. The gate voltage is adjusted for a total drain supply current of typically 150–230 mA. An assembly diagram is shown in Figure 4. The LO amplifier has effectively two gain stages as indicated in Figure 1. One wire connection is needed to each DC drain bias supply pad, VD1 and VD2, and one to each DC gate bias pad, VG1 and VG2. Harmonic LO mixing is possible in some limited cases. The integrated LO amplifier’s stages can be individually biased to provide optimum harmonic output. When considering the HMMC-3040 as a harmonic mixer, it is important to realize that the integrated double balanced mixer diodes need ~18 dBm (15 to 22 dBm) to obtain optimum mixer conversion. Agilent product note #15, “HMMC-3040 Multiplier Operation” provides two examples of harmonic mixing. Also, Agilent application note #50, “HMMC-5040 As a 20 to 40 GHz Multiplier” provides additional information on multiplier operation and is a good reference when considering the HMMC-3040 as a harmonic mixer; the HMMC-3040 integrated LO amplifier is similar to the HMMC-5040. No impedance matching network is needed because the LO port provides a good match to signals having frequency from DC to approximately 43 GHz. DBM IF DBM RF VD2 2 VG2 VD1 1 VG1 LO Figure 1. HMMC-3040 Simplified Block Diagram. 3 IF RF VD2 VG2 VD1 VG1 LO Figure 2. HMMC-3040 Harmonic Mixing Block Diagram. The microwave/millimeter-wave ports are not AC-coupled. A DC blocking capacitor is required on any RF port that may be exposed to DC voltages. No ground wires are needed because ground connections are made with plated through-holes to the backside of the device. Assembly Techniques It is recommended that the electrical connections to the bonding pads be made using 0.7-1.0 mil diameter gold wire. The microwave/millimeter-wave connections should be kept as short as possible to minimize inductance. For assemblies requiring long bond wires, multiple wires can be attached to the RF bonding pads. GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. Agilent application note #54, “GaAs MMIC ESD, Die Attach and Bonding Guidelines” provides basic information on these subjects. Additional References PN #15, “HMMC-5040 Multiplier Operation,” and AN # 50, “HMMC-5040 As a 20-40 GHz Multiplier.” 0 70 330 860 1190 2020 760 660 480 430 250 80 0 0 0 90 1210 Note: 1. Numbers relate to (X,Y) reference. (Demensions are micrometers) Figure 3. HMMC-3040 Bonding Pad Positions. >0.1 µF VDD IF >100 pF VD1 VD2 LO RF VG1 VG2 >100 pF >0.1 µF Optional I.F., wire support pads. (Stitch bond connect IF pad, support pad, and trans line) VGG Figure 4. HMMC-3040 Common Assembly Diagram. 4 Additional HMMC-3040 Performance Characteristics (Data refer to Figure 1) 13 9 8 7 6 IF = 3 GHz LO = 25 GHz, 0 dBm 5 4 -20 -15 -10 -5 0 5 10 15 20 CONVERSION LOSS (dB) 11 I DD = 150 mA I DD = 230 mA I DD = 290 mA 10 9 8 7 6 RF = 28 GHz, 0 dBm LO = 25 GHz, 0 dBm 5 4 2 2.5 3 3.5 4 4.5 5 VDD (Volt) Figure 8. Conversion Loss vs. VDD for Various LO Amplifier Drain Currents. Note: All data measured on individual devices mounted in a 50 GHz test package TA = 25°C and under Figure 1 condition (except where noted). 5 11 10 9 10 9 8 8 7 7 -30 6 -12 -20 -10 0 10 20 Figure 6. Down-Conversion Loss vs. RF Input Power. Figure 5. Up-Conversion Loss vs. IF Input Power for Various LO Amplifier Bias Conditions. VDD = 4.5 V, I DD = 230 mA 11 RF-INPUT POWER (dBm) IF-INPUT POWER (dBm) 12 12 VDD = 3.0 V, I DD = 150 mA VDD = 3.5 V, I DD = 230 mA 12 VDD = 4.5 V, I DD = 230 mA CONVERSION LOSS (dB) VDD = 3.0 V, I DD = 150 mA 11 VDD = 3.5 V, I DD = 230 mA VDD = 4.5 V, I DD = 230 mA 10 DOWN-CONVERSION LOSS (dB) UP-CONVERSION LOSS (dB) 12 RF = 28 GHz, 0 dBm LO = 25 GHz, 0 dBm -8 -4 0 4 8 LO INPUT POWER (dBm) Figure 7. Conversion Loss vs. LO Input Power. 6 This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent Technologies’ sales representative. www.semiconductor.agilent.com Data subject to change. Copyright © 2002 Agilent Technologies, Inc. Obsoletes 5988-1906EN May 20, 2002 5988-6895EN