NB675 The Future of Analog IC Technology 24V, High Current Synchronous Buck Converter With +/-1.5A LDO and Buffed Reference DESCRIPTION FEATURES The NB675 provides a complete power supply for DDR3, DDR3L and LPDDR2 memory with the highest power density. It integrates a high frequency synchronous rectified step-down switch mode converter (VDDQ) with an 1.5A sink/source LDO (VTT) and buffered low noise reference (VTTREF). • • • • • • The fully integrated Buck converter is able to deliver 10A continuous output current and 12A peak output current over a wide input supply range with excellent load and line regulation. The Buck converter employs the Constant-OnTime (COT) control scheme, which provides fast transient response and eases loop stabilization. • • • • • Wide 5V to 24V Operating Input Range 10A Continuous Output Current 12A Peak Output Current Built-in +/- 1.5A VTTLDO Low RDS(ON) Internal Power MOSFETs Proprietary Switching Loss Reduction Technique Internal Soft Start Output Discharge 500kHZ Switching Frequency OCP, OVP, UVP Protection and Thermal Shutdown VDDQ Adjustable from 0.604V to 5.5V APPLICATIONS • • • • • • • The VTT LDO provides 1.5A sink/source current capability and requires only 10uF ceramic capacitance. The VTTREF tracks VDDQ/2 with an excellent 1% accuracy. Under voltage lockout is internally set as 4.5V. An open drain power good signal indicates VDDQ is within its nominal voltage range. Laptop Computer Tablet PC Networking Systems Server Personal Video Recorders Flat Panel Television and Monitors Distributed Power Systems All MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, please visit MPS website under Products, Quality Assurance page. “MPS” and “The Future of Analog IC Technology” are registered trademarks of Monolithic Power Systems, Inc. Full protection features include OCP, OVP, and thermal shut down. This part requires minimum number of external components and is available in QFN21 (3mmx4mm) package. TYPICAL APPLICATION 220nF VIN 5-21V VIN BST 75 65 NB675 55 PG VDDQSEN VCC 45 VINLDO VTT AGND PGND 95 85 FB EN 1 EN 2 VDDQ 1.35V/10A SW VTTREF VTTSEN 220nF VTT 0.675V/2A 35 25 15 0.001 0.01 0.1 1 10 LOAD CURRENT (A) NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 1 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER ORDERING INFORMATION Part Number* NB675GL Package QFN21 (3mmx4mm) Top Marking NB675 * For Tape & Reel, add suffix –Z (e.g. NB675GL–Z) PACKAGE REFERENCE TOP VIEW BST 1 SW 2 SW NC EN2 VCC EN1 FB PG 18 17 16 15 14 13 19 VIN 20 PGND 21 PGND 12 VIN 11 PGND 10 PGND 3 5 4 6 7 8 9 VTTSEN VTT VDDQSEN VTTREF VINLDO AGND EXPOSED PAD ON BACKSIDE (5) ABSOLUTE MAXIMUM RATINGS (1) Thermal Resistance Supply Voltage VIN ....................................... 24V VSW ...............................................-0.3V to 24.3V VSW (30ns)..........................................-3V to 28V VSW (5ns)............................................-6V to 28V VBST ................................................... VSW + 5.5V VEN ............................................................... 12V Enable Current IEN (2)................................ 2.5mA All Other Pins ..............................–0.3V to +5.5V (3) Continuous Power Dissipation (TA=+25°) QFN21 ..................................................... 2.5W Junction Temperature ...............................150°C Lead Temperature ....................................260°C Storage Temperature............... -65°C to +150°C Notes: 1) Exceeding these ratings may damage the device. 2) Refer to Page 13 of Configuring the EN Control. 3) The maximum allowable power dissipation is a function of the maximum junction temperature TJ(MAX), the junction-toambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD(MAX)=(TJ(MAX)TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 4) The device is not guaranteed to function outside of its operating conditions. 5) Measured on JESD51-7, 4-layer PCB. Recommended Operating Conditions θJA θJC QFN21 (3mmx4mm) ...............50 ...... 12 ... °C/W (4) Supply Voltage VIN ..............................5V to 22V Output Voltage VOUT ....................0.604V to 5.5V Enable Current IEN....................................... 1mA Operating Junction Temp. (TJ). -40°C to +125°C NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 2 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER ELECTRICAL CHARACTERISTICS VIN = 12V, TJ = 25°C, unless otherwise noted. Parameters Symbol Supply Current Supply Current (Shutdown) IIN Supply Current (In S0 Mode) IIN Supply Current (In S3 Mode) IIN Condition VEN = 0V VEN1 = VEN1 =2V, VFB = 0.65V, IVTT = 0A VEN1 = 0V, VEN2 = 2V, VFB = 0.65V Min Typ Max Units 0 1 μA 300 400 500 μA 160 190 220 μA MOSFET High-side Switch On Resistance HSRDS-ON TJ =25°C 25 mΩ Low-side Switch On Resistance LSRDS-ON TJ =25°C 9 mΩ VEN = 0V, VSW = 0V 0 1 μA 10 11 12 A 400 250 500 300 600 350 kHz ns 125 130 2.5 60 12 135 %VREF μs %VREF μs 598 604 10 1.6 610 50 1.95 mV nA ms 1.15 1.25 100 3 0 1.35 V mV VCCVth 4.5 4.85 VCCHYS 500 Switch Leakage SWLKG Current Limit Low-side Valley Current Limit ILIMIT Switching frequency and minimum off time Switching frequency Minimum Off Time(6) FS TOFF Over-voltage and Under-voltage Protection OVP Threshold OVP Delay UVP Threshold UVP Delay VOVP TOVPDEL VUVP TUVPDEL 55 65 Reference And Soft Start Reference Voltage Feedback Current Soft Start Time VREF IFB TSS VFB = 0.604V Enable And UVLO Enable Input Low Voltage Enable Hysteresis Enable Input Current VCC Under Voltage Lockout Threshold Rising VCC Under Voltage Lockout Threshold Hysteresis NB675 Rev. 1.0 1/14/2013 VILEN VEN-HYS IEN VEN = 2V VEN = 0V www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. μA V mV 3 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER ELECTRICAL CHARACTERISTICS (continued) VIN = 12V, TJ = 25°C, unless otherwise noted. Parameters Symbol Condition Min Typ Max Units 4.8 5.1 5.3 V VCC Regulator VCC Regulator VCC VCC Load Regulation Icc=8mA 5 % Power Good FB Rising (Good) PGVth-Hi 95 FB Falling (Fault) PGVth-Lo 85 FB Rising (Fault) PGVth-Hi 115 FB Falling (Good) PGVth-Lo 105 PGTd 450 Power Good Low to High Delay Power Good Sink Current Capability Power Good Leakage Current %VREF μs VPG Sink 4mA 0.4 V IPG_LEAK VPG = 3.3V 1 μA VTTREF Output VTTREF Output Voltage VTTREF IVTTREF<0.1mA, 1V<VDDQ<1.4V IVTTREF<10mA, 1V<VDDQ<1.4V Output Voltage tolerance to VDDQ Current Limit VDDQSEN/2 ILIMIT_VTTREF 48.2% 50% 51.8% 48% 50% 52% 10 15 mA VTT LDO VTT Output Voltage VTT VTT tolerance to VTTREF Source Current Limit Sink Current Limit VTTREF -10mA<IVTT<10mA, 1V<VDDQ<1.4V -20 20 mV -1A<IVTT<1A, 1V<VDDQ<1.4V -45 45 mV ILIMIT_SOUCE ILIMIT_SINK 1.8 1.6 A A TSD 150 25 °C °C Thermal Protection Thermal Shutdown(6) Thermal Shutdown Hysteresis Note: 6) Guaranteed by design. NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 4 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER PIN FUNCTIONS PIN # 1 2, 3 4 5 6 7 8 9 10,11 Exposed Pad 20,21 12 Exposed Pad 19 Name Description Bootstrap. A capacitor connected between SW and BST pins is required to form a BST floating supply across the high-side switch driver. Switch Output. Connect this pin to the inductor and bootstrap capacitor. This pin is driven up to the VIN voltage by the high-side switch during the on-time of the PWM duty cycle. The inductor current drives the SW pin negative during the off-time. The onSW resistance of the low-side switch and the internal diode fixes the negative voltage. Use wide and short PCB traces to make the connection. Try to minimize the area of the SW pattern. Buffered VTT reference output. Decouple with a minimum 0.22μF ceramic capacitor as VTTREF close to the pin as possible. X7R or X5R grade dielectric ceramic capacitors are recommended for their stable temperature characteristics. Buck regulator output voltage sense. Connect this pin to the output capacitor of the VDDQSEN regulator directly VINLDO VTT LDO regulator input. Connect VINLDO to VDDQ in typical application. VTT LDO output. Decouple with a minimum 10uF ceramic capacitor as close to the pin VTT as possible. X7R or X5R grade dielectric ceramic capacitors are recommended for their stable temperature characteristics. Analog ground. The internal reference is referred to AGND. Connect the GND of the AGND FB divider resistor to AGND for better load regulation. VTTSEN VTT output sense. Connect this pin to the output capacitor of the VTT regulator directly PGND VIN 13 PG 14 FB 15 EN1 16 VCC 17 EN2 18 NC NB675 Rev. 1.0 1/14/2013 Power Ground. Use wide PCB traces and multiple vias to make the connection. Supply Voltage. The VIN pin supplies power for internal MOSFET and regulator. The NB675 operate from a +5V to +22V input rail. An input capacitor is needed to decouple the input rail. Use wide PCB traces and multiple vias to make the connection. Power good output, the output of this pin is an open drain signal and is high if the output voltage is higher than 95% of the nominal voltage. There is a delay from FB ≥ 95% to PG goes high. Feedback. An external resistor divider from the output to GND, tapped to the FB pin, sets the output voltage. Place the resistor divider as close to FB pin as possible. Avoid vias on the FB traces. It is recommend to set the current through FB resistors around 10uA. Enable. EN1 and EN2 are digital inputs, which are used to enable or disable the internal regulators. Once EN1=EN2=1, the VDDQ regulator, VTT LDO and VTTREF output will be turned on; when EN1=0 and EN2=1, the VDDQ regulator and VTTREF are active while VTT LDO is off; all the regulators will be turned off when EN1=EN2=0. Internal 5V LDO output. The driver and control circuits are powered from this voltage. Decouple with a minimum 1µF ceramic capacitor as close to the pin as possible. X7R or X5R grade dielectric ceramic capacitors are recommended for their stable temperature characteristics. Enable. EN1 and EN2 are digital inputs, which are used to enable or disable the internal regulators. Once EN1=EN2=1, the VDDQ regulator, VTT LDO and VTTREF output will be turned on; when EN1=0 and EN2=1, the VDDQ regulator and VTTREF are active while VTT LDO is off; all the regulators will be turned off when EN1=EN2=0. Not connected. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 5 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER TYPICAL PERFORMANCE CHARACTERISTICS VIN =20V, VDDQ =1.35V, L=1.2µH, TJ=+25°C, unless otherwise noted. Load Regulation 3500 2 85 VIN=6V 3000 1.5 75 POWER LOSS (mW) 95 VIN=8.4V 65 VIN=12.6V 55 45 VIN=19V 35 1 2500 VIN=19V 1500 15 0.001 0.01 0.1 1 1000 0 10 8 -2 9 10 0 1 1 2 .6 516 1 2 .2 12 1 1 .8 1 1 .6 1 1 .4 1 1 .2 2 3 4 5 6 7 8 9 10 LOAD CURRENT (A) Switching Frequency vs. Output Current IOUT=5A 600 IOUT=10A 500 FREQUENCY (kHz) 520 518 FREQUENCY (kHz) I_LIMIT 5 6 7 Switching Frequency vs. Temperature 13 1 2 .8 1 2 .4 514 512 510 508 506 504 400 300 200 100 502 11 -4 0 10 60 500 -50 110 VTT LDO Sink Current Load Regulation 0 50 100 150 0 0 2 4 6 8 OUTPUT CURRENT (A) 10 VTT LDO Source Current Load Regulation VDDQ=1.35V, VTT=VDDQ/2 0.725 VDDQ=1.35V, VTT=VDDQ/2 0.715 0.715 0.705 0.705 VTTREF 0.695 VOLTAGE (V) VOLTAGE (V) VIN=6V -1.5 LOAD CURRENT (A) I_v_limit vs. Temperature 0.685 0.675 0.665 VTT 0.655 0.695 0.675 0.665 0.655 0.645 0.635 0.635 0 500 1000 VTT SINK CURRENT (mA) NB675 Rev. 1.0 1/14/2013 1500 VTTREF 0.685 0.645 0.625 2 3 4 VIN=8.4V -1 VIN=6V 0 1 VIN=12.6V -0.5 VIN=8.4V LOAD CURRENT (A) 0.725 0 VIN=12.6V 500 25 VIN=19V 0.5 2000 0.625 VTT 0 500 1000 1500 VTT SOURCE CURRENT (mA) www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 6 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER TYPICAL PERFORMANCE CHARACTERISTICS (continued) VIN =20V, VDDQ =1.35V, L=1.2µH, TJ=+25°C, unless otherwise noted. Output Voltage Ripple Output Voltage Ripple IOUT = 0A IOUT = 10A Power Good through EN Start-Up IOUT = 0A VDDQ 50mV/div. VDDQ 50mV/div. VDDQ 500mV/div. VSW 10V/div. VSW 10V/div. IL 1A/div. IL 10A/div. Power Good through EN Start-Up VEN2 5V/div. VPG 5V/div. IL 1A/div. Start-Up through VIN Start-Up through VIN IOUT = 0A IOUT = 10A IOUT = 10A VDDQ 500mV/div. VEN2 5V/div. VPG 5V/div. IL 10A/div. VDDQ 500mV/div. VDDQ 500mV/div. VIN 10V/div. VSW 10V/div. IL 5A/div. VIN 10V/div. VSW 10V/div. Shutdown through VIN IL 10A/div. Shutdown through VIN IOUT = 0A Start-Up through EN IOUT = 10A IOUT = 0A VDDQ 1V/div. VDDQ 1V/div. VDDQ 1V/div. VIN 10V/div. VSW 2V/div. VIN 5V/div. VSW 5V/div. VEN2 5V/div. VSW 20V/div. IL 2A/div. NB675 Rev. 1.0 1/14/2013 IL 5A/div. IL 2A/div. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 7 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER TYPICAL PERFORMANCE CHARACTERISTICS (continued) VIN =20V, VDDQ =1.35V, L=1.2µH, TJ=+25°C, unless otherwise noted. VDDQ 1V/div. VDDQ 1V/div. VDDQ 1V/div. VEN2 5V/div. VSW 20V/div. VEN2 5V/div. VEN2 5V/div. VSW 5V/div. IL 2A/div. VSW 20V/div. IL 10A/div. VDDQ(AC) 20mV/div. IL 10A/div. VDDQ 1V/div. VDDQ 500mV/div. VTTREF 500mV/div. VTT 500mV/div. VTTREF 500mV/div. VIN 10V/div. VTT 500mV/div. VIN 20V/div. VDDQ 1V/div. VDDQ 1V/div. VDDQ 1V/div. VTTREF 500mV/div. VTT 500mV/div. VTTREF 500mV/div. VTT 500mV/div. VTTREF 500mV/div. IL 5A/div. VEN1 5V/div. NB675 Rev. 1.0 1/14/2013 VTT 500mV/div. VEN1 2V/div. VEN2 5V/div. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 8 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER TYPICAL PERFORMANCE CHARACTERISTICS (continued) VIN =20V, VDDQ =1.35V, L=1.2µH, TJ=+25°C, unless otherwise noted. VDDQ 1V/div. VTT 500mV/div. VTTREF 500mV/div. VEN2 5V/div. VDDQ 1V/div. VIN 500mV/div. VOUT 500mV/div. VSW 10V/div. VSW 10V/div. IL 10A/div. VCC 2V/div. IL 5A/div. VOUT 500mV/div. VSW 10V/div. VCC 2V/div. IL 5A/div. NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 9 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER BLOCK DIAGRAM VCC VDDQSEN VIN BST BSTREG Softstart POR & Reference VIN 0.6V VREF On Time One Shot FB Gate Control Logic Min off time EN1/EN2 SW VDDQ PGND 1V SW 130% Vref OCP PG OVP Fault Logic POK 95 % Vref 60%Vref AGND UVP VINLDO EN1/EN2 Control Logic VTTREF VTT VTTSEN Figure 1—Functional Block Diagram NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 10 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER OPERATION PWM Operation The NB675 is fully integrated synchronous rectified step-down switch mode converter. Constant-on-time (COT) control is employed to provide fast transient response and easy loop stabilization. At the beginning of each cycle, the high-side MOSFET (HS-FET) is turned ON when the feedback voltage (VFB) is below the reference voltage (VREF), which indicates insufficient output voltage. The ON period is determined by both the output voltage and input voltage to make the switching frequency fairy constant over input voltage range. After the ON period elapses, the HS-FET is turned off, or becomes OFF state. It is turned ON again when VFB drops below VREF. By repeating operation this way, the converter regulates the output voltage. The integrated low-side MOSFET (LS-FET) is turned on when the HS-FET is in its OFF state to minimize the conduction loss. There will be a dead short between input and GND if both HS-FET and LS-FET are turned on at the same time. It’s called shoot-through. In order to avoid shoot-through, a dead-time (DT) is internally generated between HS-FET off and LSFET on, or LS-FET off and HS-FET on. An internal compensation is applied for COT control to make a more stable operation even when ceramic capacitors are used as output capacitors, this internal compensation will then improve the jitter performance without affect the line or load regulation. Heavy-Load Operation continuous-conduction-mode (CCM). The CCM mode operation is shown in Figure 2 shown. When VFB is below VREF, HS-MOSFET is turned on for a fixed interval which is determined by one- shot on-timer as equation 1 shown. When the HS-MOSFET is turned off, the LS-MOSFET is turned on until next period. In CCM mode operation, the switching frequency is fairly constant and it is called PWM mode. Light-Load Operation With the load decrease, the inductor current decrease too. Once the inductor current touch zero, the operation is transition from continuousconduction-mode (CCM) to discontinuousconduction-mode (DCM). The light load operation is shown in Figure 3. When VFB is below VREF, HS-MOSFET is turned on for a fixed interval which is determined by one- shot on-timer as equation 1 shown. When the HS-MOSFET is turned off, the LS-MOSFET is turned on until the inductor current reaches zero. In DCM operation, the VFB does not reach VREF when the inductor current is approaching zero. The LS-FET driver turns into tri-state (high Z) whenever the inductor current reaches zero. A current modulator takes over the control of LSFET and limits the inductor current to less than 1mA. Hence, the output capacitors discharge slowly to GND through LS-FET. As a result, the efficiency at light load condition is greatly improved. At light load condition, the HS-FET is not turned ON as frequently as at heavy load condition. This is called skip mode. At light load or no load condition, the output drops very slowly and the NB675 reduces the switching frequency naturally and then high efficiency is achieved at light load. Figure 2—Heavy Load Operation When the output current is high and the inductor current is always above zero amps, it is called NB675 Rev. 1.0 1/14/2013 Figure 3—Light Load Operation www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 11 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER As the output current increases from the light load condition, the time period within which the current modulator regulates becomes shorter. The HS-FET is turned ON more frequently. Hence, the switching frequency increases correspondingly. The output current reaches the critical level when the current modulator time is zero. The critical level of the output current is determined as follows: IOUT (V − VOUT ) × VOUT = IN 2 × L × FS × VIN (1) It turns into PWM mode once the output current exceeds the critical level. After that, the switching frequency stays fairly constant over the output current range. Jitter and FB Ramp Slope Jitter occurs in both PWM and skip modes when noise in the VFB ripple propagates a delay to the HS-FET driver, as shown in Figures 4 and 5. Jitter can affect system stability, with noise immunity proportional to the steepness of VFB’s downward slope. However, VFB ripple does not directly affect noise immunity. VNOISE V SLO PE1 resistor. Ceramic capacitors usually can not be used as output capacitor. To realize the stability, the ESR value should be chosen as follow: RESR (2) TSW is the switching period. The NB675 has built in internal ramp compensation to make sure the system is stable even without the help of output capacitor’s ESR; and thus the pure ceramic capacitor solution can be applicant. The pure ceramic capacitor solution can significantly reduce the output ripple, total BOM cost and the board area. Figure 6 shows a typical output circuit in PWM mode without an external ramp circuit. Turn to application information section for design steps without external compensation. SW L FB V FB TSW T + ON 2 ≥ 0.7 × π COUT C4 Vo R1 R2 CAP V R EF H S D river Figure 6—Simplified Circuit in PWM Mode without External Ramp Compensation Jitter Figure 4—Jitter in PWM Mode VNOISE When using a large-ESR capacitor on the output, add a ceramic capacitor with a value of 10uF or less to in parallel to minimize the effect of ESL. V SLO PE2 V FB V REF H S D river Jitter Figure 5—Jitter in Skip Mode Operating without external ramp Operating with external ramp compensation The NB675 is usually able to support ceramic output capacitors without external ramp, however, in some of the cases, the internal ramp may not be enough to stabilize the system, and external ramp compensation is needed. Skip to application information section for design steps with external ramp compensation. The traditional constant-on-time control scheme is intrinsically unstable if output capacitor’s ESR is not large enough as an effective current-sense NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 12 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER L SW R4 Vo Vo C4 IR4 IC4 R9 R1 Ro I FB Ceramic FB 2π × FSW ⎞ 1 ⎛ R × R2 < ×⎜ 1 + R9 ⎟ × C4 5 ⎝ R1 + R 2 ⎠ R2 (3) Where: IR4 = IC4 + IFB ≈ IC4 (4) And the Vramp on the VFB can then be estimated as: VRAMP = VIN − VOUT R1 // R2 × TON × R 4 × C4 R1 // R2 + R9 (5) VSLOPE1 = − VOUT − VRAMP = Toff R 4 × C4 Figure 8—Simplified Circuit in skip Mode The downward slope of the VFB ripple in skip mode can be determined as follow: VSLOPE2 = − VREF ((R1 + R2 ) // Ro) × COUT (8) where Ro is the equivalent load resistor. As described in Figure 5, VSLOPE2 in the skip mode is lower than that is in the PWM mode, so it is reasonable that the jitter in the skip mode is larger. If one wants a system with less jitter during light load condition, the values of the VFB resistors should not be too big, however, that will decrease the light load efficiency. When using a large-ESR capacitor on the output, add a ceramic capacitor with a value of 10uF or less to in parallel to minimize the effect of ESL. Configuring the EN Control The downward slope of the VFB ripple then follows (6) As can be seen from equation 6, if there is instability in PWM mode, we can reduce either R4 or C4. If C4 can not be reduced further due to limitation from equation 3, then we can only reduce R4. For a stable PWM operation, the Vslope1 should be design follow equation 7. TSW T + ON -RESRCOUT Io × 10-3 (7) -Vslope1 ≥ 0.7 × π 2 VOUT + 2 × L × COUT TSW -Ton Io is the load current. In skip mode, the downward slope of the VFB ripple is the same whether the external ramp is used or not. Figure 8 shows the simplified circuit of the skip mode when both the HS-FET and LSFET are off. NB675 Rev. 1.0 1/14/2013 Cout R2 Figure 7—Simplified Circuit in PWM Mode with External Ramp Compensation Figure 7 shows a simplified external ramp compensation (R4 and C4) for PWM mode, with HS-FET off. Chose R1, R2, R9 and C4 of the external ramp to meet the following condition: 1 ESR R1 FB The NB675 has two enable pins to control the on/off of the internal regulators. All of VDDQ, VTTREF and VTT are turned on at S0 state (EN1=EN2=high). In S3 mode (EN1=low, EN2=high), VDDQ and VTTREF voltages are kept on while VTT is turned off and left at high impedance state (high-Z). The VTT output floats and doesn’t sink/source current in this state. In S4/S5 mode (EN1=EN2=low), all of the regulators are kept off and discharged to GND. Table 1—EN1/EN2 Control State EN1 EN2 VDDQ VTTREF VTT S0 High High ON ON ON OFF(High-Z) S3 Low High ON ON S4/S5 Low Low OFF OFF OFF Others High Low OFF OFF OFF For automatic start-up the EN pin can be pulled up to input voltage through a resistive voltage divider. Choose the values of the pull-up resistor (RUP from Vin pin to EN pin) and the pull-down www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 13 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER resistor (RDOWN from EN pin to GND) to determine the automatic start-up voltage: VIN−START = 1.45 × RUP + RDOWN (V) RDOWN For example, for RUP=150kΩ RDOWN=51kΩ,the VIN−START is set at 5.52V. (9) and To avoid noise, a 10nF ceramic capacitor from EN to GND is recommended. There is an internal Zener diode on the EN pin, which clamps the EN pin voltage to prevent it from running away. The maximum pull up current assuming a worst case 12V internal Zener clamp should be less than 1mA. Therefore, when EN is driven by an external logic signal, the EN voltage should be lower than 12V.when EN is connected with VIN through a pull-up resistor or a resistive voltage divider, the resistance selection should ensure the maximum pull up current less than 1mA. If using a resistive voltage divider and VIN higher than 12V, the allowed minimum pull-up resistor RUP should meet the following equation: VIN (V) − 12 12 − < 1(mA) RUP (kΩ) RDOWN (kΩ) (10) Especially, just using the pull-up resistor RUP (the pull-down resistor is not connected), the VIN-START is determined by input UVLO, and the minimum resistor value is: RUP (kΩ) > VIN (V) − 12 1(mA) (11) A typical pull-up resistor is 100kΩ. Soft Start The NB675 employs soft start (SS) mechanism to ensure smooth output during power-up. When the EN pin becomes high, the internal reference voltage ramps up gradually; hence, the output voltage ramps up smoothly, as well. Once the reference voltage reaches the target value, the soft start finishes and it enters into steady state operation. If the output is pre-biased to a certain voltage during startup, the IC will disable the switching of both high-side and low-side switches until the NB675 Rev. 1.0 1/14/2013 voltage on the internal reference exceeds the sensed output voltage at the FB node. VTT and VTTREF This part integrates two high performance, lowdrop-out linear regulators, VTT and VTTREF, to provide complete DDR3/DDR3L power solutions. The VTTREF has a 10-mA sink/source current capability, and track 1/2 of VDDQSEN using an on-chip divider. A minimum 0.22μF ceramic capacitor must be connected close to the VTTREF terminal for stable operation. The VTT regulator responses quickly to track VTTREF with +/-45mV under all conditions. The current capability of the VTT regulator is up to 1.5A for both sink and source modes. A minimum 10μF ceramic capacitor need to be connected close to the VTT terminal. The VTTSEN should be connected to the positive node of VTT output capacitor as a separated trace from the highcurrent line to the VTT pin. VDDQ Power Good (PG) The NB675 has power-good (PGOOD) output used to indicate whether the output voltage of the VDDQ regulator is ready or not. The PGOOD pin is the open drain of a MOSFET. It should be connected to VCC or other voltage source through a resistor (e.g. 100k,). After the input voltage is applied, the MOSFET is turned on so that the PGOOD pin is pulled to GND before SS is ready. After FB voltage reaches 95% of REF voltage, the PGOOD pin is pulled high after a delay. The PGOOD delay time is 1ms. When the FB voltage drops to 85% of REF voltage, the PGOOD pin will be pulled low. VDDQ Over Current Protection NB675 has cycle-by-cycle over current limiting control. The current-limit circuit employs a "valley" current-sensing algorithm. The part use the Rds(on) of the low side MOSFET as a current-sensing element. If the magnitude of the current-sense signal is above the current-limit threshold, the PWM is not allowed to initiate a new cycle. The trip level is fixed internally. The inductor current is monitored by the voltage between GND www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 14 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER pin and SW pin. GND is used as the positive current sensing node so that GND should be connected to the source terminal of the bottom MOSFET. Since the comparison is done during the high side MOSFET OFF and low side MOSFET ON state, the OC trip level sets the valley level of the inductor current. Thus, the load current at overcurrent threshold, IOC, can be calculated as follows: IOC = I _ limit + ΔIinductor 2 (13) In an over-current condition, the current to the load exceeds the current to the output capacitor; thus the output voltage tends to fall off. Eventually, it will end up with crossing the under voltage protection threshold and shutdown. UVLO Protection The NB675 has under-voltage lock-out protection (UVLO). When the VCC voltage is higher than the UVLO rising threshold voltage, the part will be powered up. It shuts off when the VIN voltage is lower than the UVLO falling threshold voltage. This is non-latch protection. The part is disabled when the VCC voltage falls below 4.5V. If an application requires a higher under-voltage lockout (UVLO), use the EN pin as shown in Figure 9 to adjust the input voltage UVLO by using two external resistors. It is recommended to use the enable resistors to set the UVLO falling threshold (VSTOP) above 4.5V. The rising threshold (VSTART) should be set to provide enough hysteresis to allow for any input supply variations. VTT Over-Current Protection IN The VTT LDO has an internally fixed current limit of 1.8A for source operation, and 1.6A for sink. VDDQ Over/Under-Voltage (OVP/UVP) Protection NB675 monitors a resistor divided feedback voltage to detect over and under voltage. When the feedback voltage becomes higher than 115% of the target voltage, the controller will enter Dynamic Regulation Period. During this period, the LS will off when the LS current goes to -1A, this will then discharge the output and try to keep it within the normal range. If the dynamic regulation can not limit the increasing of the Vo, once the feedback voltage becomes higher than 130% of the feedback voltage, the OVP comparator output goes high and the circuit latches as the high-side MOSFET driver OFF and the low-side MOSFET turn on acting as an 1A current source. When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes high if the UV still occurs after 26us delay; then the fault latch will be triggered--latches HS off and LS on; the LS FET keeps on until the inductor current goes zero. NB675 Rev. 1.0 1/14/2013 RUP NB675 EN Comparator EN RDOWN Figure 9—Adjustable UVLO Thermal Shutdown Thermal shutdown is employed in the NB675. The junction temperature of the IC is internally monitored. If the junction temperature exceeds the threshold value (typical 150ºC), the converter shuts off. This is a non-latch protection. There is about 25ºC hysteresis. Once the junction temperature drops to about 125ºC, it initiates a SS. Output Discharge NB675 discharges all the outputs, including VDDQ, VTTREF and VTT when EN2=low, or the controller is turned off by the protection functions (UVP & OCP, OCP, OVP, UVLO, and thermal shutdown). The part discharge the outputs using an internal 6Ω MOSFET. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 15 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER APPLICATION INFORMATION Setting the Output Voltage---without external compensation The NB675 can usually support different type of output capacitors, including POSCAP, electrolytic capacitor and also ceramic capacitors without external ramp compensation, The output voltage is then set by feedback resistors R1 and R2. As Figure 10 shows. Setting the Output Voltage ―with external compensation SW Vo L FB R4 C4 R1 R9 Ceramic R2 SW L FB Vo C4 R1 R2 CAP Figure10—Simplified Circuit of POS Capacitor First, choose a value for R2. R2 should be chosen reasonably, a small R2 will lead to considerable quiescent current loss while too large R2 makes the FB noise sensitive. Typically, set the current through R2 at around 5-10uA will make a good balance between system stability and also the no load loss. Then R1 is determined as follow with the output ripple considered: 1 VOUT − ΔVOUT − VREF 2 (13) R1 = ⋅ R2 VREF ΔVOUT is the output ripple, refer to equation (23) Other than feedback resistors, a feed forward cap C4 is usually applied for a better transient performance, especially when ceramic caps are applied for their small capacitance, a cap value around 100pF-1nF is suggested for a better transient while also keep the system stable with enough noise immunity. In case the system is noise sensitive because of the zero induced by this cap, add a resistor-usually named as R9 between this cap and FB to form a pole, this resistor can be set according to equation (16) as in the following section. NB675 Rev. 1.0 1/14/2013 Figure11—Simplified Circuit of Ceramic Capacitor If the system is not stable enough when low ESR ceramic capacitor is used in the output, an external voltage ramp should be added to FB through resistor R4 and capacitor C4. The output voltage is influenced by ramp voltage VRAMP besides R divider as shown in Figure 11. The VRAMP can be calculated as shown in equation 7. R2 should be chosen reasonably, a small R2 will lead to considerable quiescent current loss while too large R2 makes the FB noise sensitive. It is recommended to choose a value within 5kΩ-50kΩ for R2, using a comparatively larger R2 when Vo is low, etc.,1.05V, and a smaller R2 when Vo is high. And the value of R1 then is determined as follow: R2 (14) R= 1 VFB(AVG) R2 (VOUT -VFB(AVG) ) R4 +R9 - The VFB(AVG) is the average value on the FB, VFB(AVG) varies with the Vin, Vo, and load condition, etc., its value on the skip mode would be lower than that of the PWM mode, which means the load regulation is strictly related to the VFB(AVG). Also the line regulation is related to the VFB(AVG). If one wants to gets a better load or line regulation, a lower Vramp is suggested, as long as the criterion shown in equation 8 can be met. For PWM operation, VFB(AVG) value can be deduced from the equation below. R1 //R2 1 VFB(AVG) = VREF + VRAMP × 2 R1 //R2 + R9 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. (15) 16 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER Usually, R9 is set to 0Ω, and it can also be set following equation 16 for a better noise immunity. It should also set to be 5 times smaller than R1//R2 to minimize its influence on Vramp. 1 R9 = 2π× C4 × 2FSW (16) Using equation 14 to calculate the R1 can be complicated. To simplify the calculation, a DCblocking capacitor Cdc can be added to filter the DC influence from R4 and R9. Figure 12 shows a simplified circuit with external ramp compensation and a DC-blocking capacitor. With this capacitor, R1 can easily be obtained by using the simplified equation for PWM mode operation: 1 (VOUT − VREF − VRAMP ) 2 R1 = R2 1 VREF + VRAMP 2 (17) Cdc is suggested to be at least 10 times larger than C4 for better DC blocking performance, and should also not larger than 0.47uF considering start up performance. In case one wants to use larger Cdc for a better FB noise immunity, combined with reduced R1 and R2 to limit the Cdc in a reasonable value without affecting the system start up. Be noted that even when the Cdc is applied, the load and line regulation are still Vramp related. SW FB C4 R1 Cdc ICIN = IOUT × VOUT V × (1 − OUT ) VIN VIN (18) The worst-case condition occurs at VIN = 2VOUT, where: ICIN = IOUT 2 (19) For simplification, choose the input capacitor with an RMS current rating greater than half of the maximum load current. The input capacitance value determines the input voltage ripple of the converter. If there is an input voltage ripple requirement in the system, choose the input capacitor that meets the specification. The input voltage ripple can be estimated as follows: ΔVIN = IOUT V V × OUT × (1 − OUT ) FSW × CIN VIN VIN (20) Under worst-case conditions where VIN = 2VOUT: ΔVIN = IOUT 1 × 4 FSW × CIN (21) Output Capacitor Ceramic R2 Figure12—Simplified Circuit of Ceramic Capacitor with DC blocking capacitor Input Capacitor The input current to the step-down converter is discontinuous and therefore requires a capacitor to supply the AC current to the step-down converter while maintaining the DC input voltage. Ceramic capacitors are recommended for best performance and should be placed as close to the VIN pin as possible. Capacitors with X5R and NB675 Rev. 1.0 1/14/2013 The capacitors must also have a ripple current rating greater than the maximum input ripple current of the converter. The input ripple current can be estimated as follows: Vo L R4 X7R ceramic dielectrics are recommended because they are fairly stable with temperature fluctuations. The output capacitor is required to maintain the DC output voltage. Ceramic or POSCAP capacitors are recommended. The output voltage ripple can be estimated as: ΔVOUT = VOUT V 1 × (1 − OUT ) × (RESR + ) (22) FSW × L VIN 8 × FSW × COUT In the case of ceramic capacitors, the impedance at the switching frequency is dominated by the capacitance. The output voltage ripple is mainly caused by the capacitance. For simplification, the output voltage ripple can be estimated as: www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 17 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER ΔVOUT VOUT V = × (1 − OUT ) 2 8 × FSW × L × COUT VIN (23) The output voltage ripple caused by ESR is very small. Therefore, an external ramp is needed to stabilize the system. The external ramp can be generated through resistor R4 and capacitor C4. In the case of POSCAP capacitors, the ESR dominates the impedance at the switching frequency. The ramp voltage generated from the ESR is high enough to stabilize the system. Therefore, an external ramp is not needed. A minimum ESR value around 12mΩ is required to ensure stable operation of the converter. For simplification, the output ripple can be approximated as: ΔVOUT = VOUT V × (1 − OUT ) × RESR FSW × L VIN (24) Maximum output capacitor limitation should be also considered in design application. NB675 has an around 1.6ms soft-start time period. If the output capacitor value is too high, the output voltage can’t reach the design value during the soft-start time, and then it will fail to regulate. The maximum output capacitor value Co_max can be limited approximately by: CO _ MAX = (ILIM _ AVG − IOUT ) × Tss / VOUT (25) Where, ILIM_AVG is the average start-up current during soft-start period. Tss is the soft-start time. Inductor The inductor is necessary to supply constant current to the output load while being driven by the switched input voltage. A larger-value inductor will result in less ripple current that will result in lower output ripple voltage. However, a larger-value inductor will have a larger physical footprint, higher series resistance, and/or lower saturation current. A good rule for determining the inductance value is to design the peak-topeak ripple current in the inductor to be in the range of 30% to 40% of the maximum output current, and that the peak inductor current is below the maximum switch current limit. The inductance value can be calculated by: NB675 Rev. 1.0 1/14/2013 L= VOUT V × (1 − OUT ) FSW × ΔIL VIN (26) Where ΔIL is the peak-to-peak inductor ripple current. The inductor should not saturate under the maximum inductor peak current, where the peak inductor current can be calculated by: ILP = IOUT + VOUT V × (1 − OUT ) 2FSW × L VIN (27) PCB Layout Guide 1. The high current paths (GND, IN, and SW) should be placed very close to the device with short, direct and wide traces. 2. Put the input capacitors as close to the IN and GND pins as possible. 3. Put the decoupling capacitor as close to the VCC and GND pins as possible. Place the Cap close to VCC if the distance is long. And place >3 Vias if via is required to reduce the leakage inductance. 4. Keep the switching node SW short and away from the feedback network. 5. The external feedback resistors should be placed next to the FB pin. Make sure that there is no via on the FB trace. 6. Keep the BST voltage path (BST, C3, and SW) as short as possible. 7. Keep the IN and GND pads connected with large copper and use at least two layers for IN and GND trace to achieve better thermal performance. Also, add several Vias with 10mil_drill/18mil_copper_width close to the IN and GND pads to help on thermal dissipation. 8. Four-layer layout is strongly recommended to achieve better thermal performance. Note Please refer to the PCB Layout Application Note for more details. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 18 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER PGND DO NOT CONNECT TO PGND HERE To AGND VOUT AGND KELVIN CONNECT TO PGND AT VCC CAP AGND LP 18 EN2 VCC EN1 FB PG 17 16 15 14 13 At least two layers should be applied for Vin and PGND and place >20 vias close to the part for a better thermal performance VIN BST 1 VIN 19 VIN 20 PGND 21 PGND 12 2 SW 11 PGND 3 4 5 6 7 10 8 9 AGND --Top Layer --Inner PGND Layer --Inner Layer2 --Bottom Layer --Via --Via For AGND VOUT PGND Figure 13—Recommend Layout Recommend Design Example Some design examples are provided below when the ceramic capacitors are applied: Table 2—Design Example VOUT (V) Cout (F) L (μH) R4 (Ω) C4 (F) R1 (kΩ) R2 (kΩ) 1.05 22μx3 1.2 NS 220p 59 82 1.2 22μx3 1.2 NS 220p 100 102 1.35 22μx3 1.2 NS 220p 100 82 NB675 Rev. 1.0 1/14/2013 The detailed application schematic is shown in Figure 14 when large ESR caps are used and Figure 15 when low ESR caps are applied. The typical performance and circuit waveforms have been shown in the Typical Performance Characteristics section. For more possible applications of this device, please refer to related Evaluation Board Data Sheets. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 19 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER TYPICAL APPLICATION 4.7Ω VIN 4.7-22V 220nF 1.2μH VIN 22μF 22μF BST VDDQ 1.35V/10A SW NS 499 499kΩ EN 1 220pF 100kΩ EN 2 PG 22μFx3 Ceramic Cap FB 82kΩ NB675 VDDQSEN 100kΩ VCC VINLDO 1μF PGND VTT 0.675V/2A VTT AGND 10μF VTTSEN VTTREF 10μF 220nF Figure 14 — Typical Application Circuit with Low ESR Ceramic Output Capacitor VIN=5-22V, VOUT=1.35V, IOUT=10A 4.7Ω VIN 4.7-22V 220nF 1.2μH VIN 22μF 22μF BST VDDQ 1.35V/10A SW 100kΩ 499kΩ EN 1 EN 2 + FB 82kΩ NB675 330μF POSCAP PG VDDQSEN 100kΩ VCC VINLDO 1μF PGND VTT 0.675V/2A VTT AGND VTTREF VTTSEN 10μF 10μF 220nF Figure 15 — Typical Application Circuit with Large ESR POSCAP Output Capacitor VIN=5-22V, VOUT=1.35V, IOUT=10A NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 20 NB675 –24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER PACKAGE INFORMATION QFN21 (3mmX4mm) NOTICE: The information in this document is subject to change without notice. Please contact MPS for current specifications. Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications. NB675 Rev. 1.0 1/14/2013 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. 21