NEC UPC2776TB-E3

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC2776TB
5 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has
impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band.
This IC is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
: VCC = 4.5 to 5.5 V
• Circuit current
: ICC = 25 mA TYP. @VCC = 5.0 V
• Power gain
: GP = 23 dB TYP. @f = 1 GHz
• Medium output power
: PO(1 dB) = +6.5 dBm @f = 1 GHz
• Upper limit operating frequency : fu = 2.7 GHz TYP. @3 dB bandwidth
: input/output 50 Ω
• Port impedance
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Systems required wideband operation from HF to 2.0 GHz
ORDERING INFORMATION
Part Number
µPC2776TB-E3
Package
Marking
6-pin super minimold
C2L
Supplying Form
• Embossed tape 8 mm wide
• 1, 2, 3 pins face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: µPC2776TB
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12680EJ3V0DS00 (3rd edition)
Date Published February 2001 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 2001
µPC2776TB
PIN CONNECTIONS
C2L
(Top View)
3
2
1
(Bottom View)
4
4
3
5
5
2
6
6
1
Pin No.
Pin name
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Part No.
µPC2776T
µPC2776TB
µPC2708T
µPC2708TB
µPC2709T
µPC2709TB
µPC2710T
µPC2710TB
fu
(GHz)
PO(1 dB)
(dBm)
PO(sat)
(dBm)
GP
(dB)
NF
(dB)
ICC
(mA)
2.7
+6.5
+8.5
23
6.0
@f = 1 GHz
25
6.5
@f = 1 GHz
26
5
@f = 1 GHz
25
3.5
@f = 0.5 GHz
22
2.9
2.3
1.0
−
+10.0
+9.0
+11.5
−
+13.5
15
23
33
Package
6-pin minimold
C2L
6-pin super minimold
6-pin minimold
C1D
6-pin super minimold
6-pin minimold
C1E
6-pin super minimold
6-pin minimold
C1F
6-pin super minimold
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.
Caution The package size distinguishes between minimold and super minimold.
2
Data Sheet P12680EJ3V0DS
Marking
µPC2776TB
PIN EXPLANATION
Pin
No.
1
2
3
5
4
6
Pin Name
INPUT
GND
OUTPUT
VCC
Applied
Voltage (V)
–
0
Voltage
as same
as VCC
through
external
inductor
4.5 to 5.5
Pin
Voltage
Function and Applications
Internal Equivalent Circuit
Note
(V)
1.03
–
–
–
Signal input pin. A internal
matching circuit, configured with
resistors, enables 50 Ω connection over a wide band.
A multi-feedback circuit is designed to cancel the deviations
of hFE and resistance.
This pin must be coupled to signal source with capacitor for DC
cut.
Ground pin. This pin should be
connected to system ground
with minimum inductance.
Ground pattern on the board
should be formed as wide as
possible.
All the ground pins must be
connected together with wide
ground pattern to decrease impedance difference.
Signal output pin. The inductor
must be attached between VCC
and output pins to supply current to the internal output transistors.
6
4
1
3
2
5
Power supply pin, which biases
the internal input transistor.
This pin should be externally
equipped with bypass capacitor
to minimize its impedance.
Note Pin voltage is measured at VCC = 5.0 V
Data Sheet P12680EJ3V0DS
3
µPC2776TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, pin 4 and pin 6
6
V
Circuit Current
ICC
TA = +25°C
60
mA
Power Dissipation
PD
Mounted on double-sided copper clad
50 × 50 × 1.6 mm epoxy glass PWB,
TA = +85°C
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+10
dBm
TA = +25°C
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Symbol
MIN.
TYP.
MAX.
Unit
VCC
4.5
5.0
5.5
V
Remark
The same voltage should be applied to pin 4 and pin 6.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25 °C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No signal
18
25
33
mA
Power Gain
GP
f = 1 GHz
21
23
26
dB
PO(1dB)
f = 1 GHz
+4.0
+6.5
−
dBm
NF
f = 1 GHz
−
6.0
7.5
dB
3 dB down below from gain at
f = 0.1 GHz
2.3
2.7
−
GHz
Gain 1 dB Compression Output
Power
Noise Figure
Upper Limit Operating Frequency
4
Symbol
fu
Isolation
ISL
f = 1 GHz
27
32
−
dB
Input Return Loss
RLin
f = 1 GHz
4.5
7.5
−
dB
Output Return Loss
RLout
f = 1 GHz
15
20
−
dB
Saturated Output Power
PO(sat)
f = 1 GHz
−
+8.5
−
dBm
Gain Flatness
∆GP
f = 0.1 to 2.0 GHz
−
±1.0
−
dB
Data Sheet P12680EJ3V0DS
µPC2776TB
TEST CIRCUIT
VCC
1 000 pF
C3
L
6
50 Ω
C1
IN
C2
4
1
50 Ω
OUT
1 000 pF
1 000 pF
2, 3, 5
COMPONENTS OF TEST CIRCUIT
EXAMPLE OF ACTUAL APPLICATION COMPONENTS
FOR MEASURING ELECTRICAL
CHARACTERISTICS
Type
Value
C1, C2
Bias Tee
1 000 pF
C3
Capacitor
1 000 pF
L
Bias Tee
1 000 nH
Type
Value
Operating Frequency
C1 to C3
Chip capacitor
1 000 pF
100 MHz or higher
L
Chip inductor
300 nH
10 MHz or higher
100 nH
100 MHz or higher
10 nH
1.0 GHz or higher
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a
peak in the operating frequency band, and suppressed at lower frequencies.
The recommendable inductance can be chosen from example of actual application components list as shown
above.
CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors
for the input and output pins.
The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias
can be supplied against Vcc fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2πRfc).
Data Sheet P12680EJ3V0DS
5
µPC2776TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
AMP-2
3
Top View
1
2
IN
OUT
C
C
6
L
5
4
C
2L
→
Mounting direction
VCC
C
COMPONENT LIST
Notes
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
Value
2. Back side: GND pattern
C
1 000 pF
3. Solder plated on pattern
L
300 nH
4.
: Through holes
For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATIONS
OF 6-PIN SUPER MINI-MOLD SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P13252E).
6
Data Sheet P12680EJ3V0DS
µPC2776TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
40
No signal
VCC = 5.0 V
No Signal
35
Circuit Current ICC (mA)
Circuit Current ICC (mA)
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
1
4
3
2
Supply Voltage VCC (V)
5
0
–60 –40 –20
0
+20 +40 +60 +80 +100
Operating Ambient Temperature TA (°C)
6
8
20
7
6
POWER GAIN vs. FREQUENCY
30
GP
VCC = 5.5 V
VCC = 5.0 V
Power Gain GP (dB)
25
Power Gain GP (dB)
9
VCC = 4.5 V
15
NF
VCC = 5.5 V
VCC = 5.0 V
10
25
VCC = 5.0 V
TA = +25°C
TA = –40°C
TA = +85°C
20
15
VCC = 4.5 V
5
5
0.1
0.3
1.0
Frequency f (GHz)
0
0
Input Return Loss RLin (dB)
Output Return Loss RLout (dB)
VCC = 5.0 V
–20
–30
–40
0.3
1.0
Frequency f (GHz)
1.0
0.3
Frequency f (GHz)
3.0
INPUT RETURN LOSS, OUTPUT RETURN LOSS vs.
FREQUENCY
–10
–50
0.1
10
0.1
3.0
ISOLATION vs. FREQUENCY
Isolation ISL (dB)
Noise Figure NF (dB)
NOISE FIGURE, POWER GAIN vs. FREQUENCY
3.0
VCC = 5.0 V
RLin
–10
–20
RLout
–30
–40
–50
0.1
Data Sheet P12680EJ3V0DS
0.3
1.0
Frequency f (GHz)
3.0
7
µPC2776TB
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+15
+15
f = 1.0 GHz
VCC = 5.5 V
+5
0
+10
Output Power Pout (dBm)
Output Power Pout (dBm)
+10
VCC = 5.0 V
VCC = 4.5 V
–5
–10
0
TA = –40°C
–5
–10
–20
0
–35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
+5 +10
OUTPUT POWER vs. INPUT POWER
+15
f = 2.0 GHz
VCC = 5.0 V
+10
Output Power Pout (dBm)
+5
0
–5
VCC = 4.5 V
–10
–15
+18
+16
VCC = 5.0 V
VCC = 5.5 V
+10
+8
+6
+4
0
0.1
0
f = 2.0 GHz
–5
–10
VCC = 4.5 V
0.3
1.0
Frequency f (GHz)
3.0
+5 +10
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
3rd Order Intermodulation Distortion IM3 (dBc)
+20
+2
+5
–20
0
–35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
+5 +10
SATURATED OUTPUT POWER vs. FREQUENCY
+12
f = 1.0 GHz
–15
–20
0
–35 –30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
+14
VCC = 5.0 V
+10
VCC = 5.5 V
+5 +10
OUTPUT POWER vs. INPUT POWER
+15
Output Power Pout (dBm)
TA = +25°C
–15
–20
–35 –30 –25 –20 –15 –10 –5
0
Input Power Pin (dBm)
Saturated Output Power PO(sat) (dBm)
TA = +85°C
+5
–15
8
f = 1.0 GHz
VCC = 5.0 V
–60
f1 = 1 000 MHz
f2 = 1 002 MHz
–50
VCC = 5.5 V
–40
VCC = 5.0 V
–30
VCC = 4.5 V
–20
–10
–10 –8 –6 –4 –2 0 +2 +4 +6 +8 +10
Output Power of Each Tone PO(each) (dBm)
Data Sheet P12680EJ3V0DS
µPC2776TB
S-PARAMETERS (TA = +25°°C, VCC = Vout = 5.0 V)
S11- FREQUENCY
0.1 G
1.0 G
3.0 G
2.0 G
S22- FREQUENCY
3.0 G
1.0 G
0.1 G
2.0 G
Data Sheet P12680EJ3V0DS
9
µPC2776TB
TYPICAL S-PARAMETER VALUES (TA = +25°C)
VCC = Vout = 5.0 V, ICC = 27 mA
FREQUENCY
MHz
MAG.
ANG.
MAG.
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
0.226
0.240
0.254
0.267
0.285
0.308
0.345
0.386
0.425
0.449
0.466
0.478
0.507
0.533
0.564
0.568
0.576
0.571
0.570
0.569
0.564
0.548
0.535
0.516
0.515
0.508
0.503
0.489
0.471
0.457
0.455
2.8
6.4
10.4
11.4
11.1
8.5
6.1
3.9
1.4
–1.5
–6.1
–12.0
–17.7
–24.7
–30.3
–36.4
–42.0
–48.5
–54.5
–59.7
–64.2
–69.6
–75.5
–81.8
–87.0
–90.9
–94.8
–97.6
–101.3
–106.7
–111.3
13.844
13.862
13.942
14.123
14.267
14.423
14.670
14.864
15.210
15.455
15.564
15.550
15.622
15.577
15.527
15.285
14.960
14.570
14.026
13.715
13.283
12.926
12.515
12.093
11.498
11.136
10.511
10.126
9.850
9.242
9.065
10
S11
S21
S12
S22
K
ANG.
MAG.
ANG.
MAG.
ANG.
–5.9
–12.5
–18.6
–25.2
–31.8
–38.6
–45.5
–52.8
–60.1
–68.4
–76.6
–84.9
–93.1
–101.3
–110.6
–119.0
–127.8
–136.4
–144.7
–151.7
–159.8
–167.5
–174.8
177.9
170.1
163.1
156.6
148.3
143.2
135.5
128.9
0.029
0.029
0.028
0.029
0.029
0.029
0.030
0.030
0.031
0.030
0.030
0.030
0.030
0.029
0.029
0.027
0.026
0.024
0.023
0.022
0.020
0.018
0.018
0.016
0.017
0.015
0.015
0.018
0.019
0.022
0.026
–1.5
0.3
3.2
4.8
7.2
9.3
10.7
11.0
11.9
11.8
10.6
11.7
13.4
13.2
13.5
11.3
12.6
14.8
15.8
18.2
23.5
27.1
36.3
41.9
53.3
64.3
67.9
85.0
93.7
100.0
108.0
0.032
0.024
0.030
0.031
0.037
0.038
0.040
0.043
0.055
0.072
0.084
0.093
0.094
0.114
0.130
0.154
0.167
0.179
0.194
0.212
0.228
0.240
0.251
0.268
0.279
0.296
0.306
0.315
0.330
0.343
0.357
–177.4
–171.9
–176.3
–167.6
–167.3
–159.3
–160.7
–161.9
–169.0
–169.1
–169.1
–173.6
177.9
167.0
164.1
158.0
152.6
143.0
135.2
128.1
121.6
115.9
108.1
102.4
96.0
90.8
86.7
79.2
73.0
67.0
60.7
Data Sheet P12680EJ3V0DS
1.39
1.39
1.40
1.36
1.33
1.28
1.22
1.18
1.12
1.10
1.08
1.07
1.05
1.05
1.02
1.07
1.09
1.18
1.27
1.35
1.48
1.66
1.75
2.01
1.99
2.22
2.29
2.00
1.96
1.81
1.53
µPC2776TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
Data Sheet P12680EJ3V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.1 MIN.
0.9±0.1
2.0±0.2
1.25±0.1
11
µPC2776TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC pin.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input pin and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limit: NoneNote
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limit: NoneNote
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure limit: NoneNote
WS60-00-1
Partial Heating
Pin temperature: 300°C or below
Time: 3 seconds or less (per side of device)
Exposure limit: NoneNote
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
12
Data Sheet P12680EJ3V0DS
µPC2776TB
[MEMO]
Data Sheet P12680EJ3V0DS
13
µPC2776TB
[MEMO]
14
Data Sheet P12680EJ3V0DS
µPC2776TB
[MEMO]
Data Sheet P12680EJ3V0DS
15
µPC2776TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is current as of February, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4