NEC UPC2747TB

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC2747TB, µPC2748TB
3 V, SUPER MINIMOLD SILICON MMIC
AMPLIFIER FOR MOBILE COMMUMICATIONS
DESCRIPTION
The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile
communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.
The µPC2747TB, µPC2748TB have compatible pin connections and performance to µPC2747T, µPC2748T of
conventional minimold version. So, in the case of reducing your system size, µPC2747TB, µPC2748TB are suitable
to replace from µPC2747T, µPC2748T.
These ICs are manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
• High-density surface mounting
• Supply voltage
• Noise figure
: 6-pin super minimold package
: VCC = 2.7 to 3.3 V
: µPC2747TB ; NF = 3.3 dB TYP. @ f = 900 MHz
: µPC2748TB ; NF = 2.8 dB TYP. @ f = 900 MHz
: µPC2747TB ; fu = 1.8 GHz TYP.
: µPC2748TB ; fu = 1.5 GHz TYP.
• Upper limit operating frequency
APPLICATION
• Buffer amplifiers for mobile telephones, etc. (PDC800M, GSM)
ORDERING INFORMATION
Part Number
µPC2747TB-E3
Package
6-pin super minimold
µPC2748TB-E3
Remark
Marking
Supplying Form
C1S
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape.
Qty 3 kp/reel.
C1T
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPC2747TB, µPC2748TB)
Caution
Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13444EJ2V0DS00 (2nd edition)
Date Published June 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1998, 1999
µPC2747TB, µPC2748TB
PIN CONNECTIONS
3
2
1
C1S
(Top View)
(Bottom View)
Pin No.
Pin Name
1
INPUT
4
4
3
2
GND
5
5
2
3
GND
6
6
1
4
OUTPUT
5
GND
6
VCC
Marking is an example of µPC2747TB
PRODUCT LINE-UP (TA = +25°C, VCC = 3.0 V, ZL = ZS = 50 Ω )
Part No.
fu (GHz)
PO(sat) (dBm)
GP (dB)
NF (dB)
ICC (mA)
1.8
–7.0
12
3.3
5.0
Package
µPC2747T
µPC2747TB
6-pin minimold
C1S
6-pin super minimold
µPC2748T
µPC2748TB
Marking
6-pin minimold
0.2 to 1.5
–3.5
19
2.8
6.0
C1T
6-pin super minimold
Remark
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Notice
The package size distinguishes between minimold and super minimold.
SYSTEM APPLICATION EXAMPLE
EXAMPLE OF 900 MHz BAND DIGITAL CELLULER TELEPHONE
Digtal Cellular System Block Diagram
RX
DEMO
PSC+PLL
I
Q
PLL
SW
I
0˚
TX
φ
PA
90˚
Q
: µPC2747TB, µPC2748TB applicable
2
Data Sheet P13444EJ2V0DS00
µPC2747TB, µPC2748TB
PIN EXPLANATION
Pin
No.
1
Pin
Name
INPUT
Applied
Voltage
(V)
Pin
Voltage

0.80
0.80
4
OUTPUT

2.79
2.72
6
VCC
2
3
5
GND
Function and Applications
Internal Equivalent Circuit
Note
(V)
Signal input pin. A internal matching circuit,
configured with resistors, enables 50 Ω
connection over a wide band. This pin must
be coupled to signal source with capacitor
for DC cut.
Signal output pin. A internal matching
circuit, configured with resistors, enables 50
Ω connection over a wide band. This pin
must be coupled to next stage with capacitor
for DC cut.
2.7 to
3.3

Power supply pin. This pin should be
externally equipped with bypass capacity to
minimize ground impedance.
0

Ground pin. This pin should be connected to
system ground with minimum inductance.
Ground pattern on the board should be
formed as wide as possible. All the ground
pins must be connected together with wide
ground pattern to decrease impedance
difference.
6 VCC
4 OUT
IN 1
*
3
GND
2
5
GND
The above diagram is for the µPC2747TB.
The resistor marked with an asterisk does
not exist in the µPC2748TB.
Note Pin voltage is measured at VCC = 3.0 V. Above: µPC2747TB, Below: µPC2748TB
Data Sheet P13444EJ2V0DS00
3
µPC2747TB, µPC2748TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C
4.0
V
Circuit Current
ICC
TA = +25°C
15
mA
Power Dissipation
PD
Mounted on double sided copper clad
50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C)
200
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power Level
Pin
0
dBm
TA = +25°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
2.7
3.0
3.3
V
Operating Ambient Temperature
TA
−40
+25
+85
°C
ELECTRICAL CHARACTERISTICS (TA = +25°°C, VCC = 3.0 V, ZS = ZL = 50 Ω)
µPC2747TB
Parameter
µPC2748TB
Unit
Test Conditions
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
3.8
5.0
7.0
4.5
6.0
8.0
mA
Circuit Current
ICC
No Signal
Power Gain
GP
f = 900 MHz
9
12
14
16
19
21
dB
PO(sat)
f = 900 MHz
Pin = –8 dBm
–9.5
–7.0
–
–6.0
–3.5
–
dBm
NF
f = 900 MHz
–
3.3
4.5
–
2.8
4.0
dB
Maximum Output Level
Noise Figure
4
Symbol
Upper Limit Operating Frequency
fu
3 dB down below
from gain at
f = 900 MHz
1.5
1.8
–
1.2
1.5
–
GHz
Lower Limit Operating Frequency
fL
3 dB down below
from gain at
f = 900 MHz
–
–
–
–
0.2
0.4
GHz
Isolation
ISL
f = 900 MHz
35
40
–
35
40
–
dB
Input Return Loss
RLin
f = 900 MHz
11
14
–
8.5
11.5
–
dB
Output Return Loss
RLout
f = 900 MHz
7
10
–
5.5
8.5
–
dB
Data Sheet P13444EJ2V0DS00
µPC2747TB, µPC2748TB
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, ZL = ZS = 50 Ω )
Reference
Parameter
Symbol
Test Conditions
µPC2747TB
µPC2748B
Unit
Circuit Current
ICC
VCC = 1.8 V,
No signals
3.0
3.5
mA
Power Gain
GP
VCC = 1.8 V,
f = 900 MHz
5.5
11.5
dB
−13.7
−10.0
dBm
VCC = 1.8 V,
f = 900 MHz
5.2
4.5
dB
Maximum Output Level
Noise Figure
PO(sat)
NF
VCC = 1.8 V,
f = 900MHz,
Pin = −8 dBm
Upper Limit Operating Frequency
fu
VCC = 1.8 V,
3 dB down below
from gain at
f = 900 MHz
1.8
1.5
GHz
Lower Limit Operating Frequency
fL
VCC = 1.8 V,
3 dB down below
from gain at
f = 900 MHz

0.2
GHz
Isolation
ISL
VCC = 1.8 V,
f = 900MHz
34
34
dB
Input Return Loss
RLin
VCC = 1.8 V,
f = 900MHz
11
10
dB
Output Return Loss
RLout
VCC = 1.8 V,
f = 900MHz
13
12
dB
VCC = 3.0 V,
Pout = −20 dBm,
f1 = 900 MHz,
f2 = 902 MHz
−34
−38
dBc
VCC = 1.8 V,
Pout = −20 dBm,
f1 = 900 MHz,
f2 = 902 MHz
−20
−28
3rd Order Intermodulation Distortion
IM3
Data Sheet P13444EJ2V0DS00
5
µPC2747TB, µPC2748TB
TEST CIRCUIT
VCC
1 000 pF
C3
6
50 Ω
C1
1
IN
C2
4
1 000 pF
50 Ω
OUT
1 000 pF
2, 3, 5
EXAMPLE OF APPLICATION CIRCUIT
VCC
1 000 pF
1 000 pF
C3
C6
6
50 Ω
C1
IN
6
1
4
1 000 pF
C4
C5
1 000 pF
1 000 pF
R1
50 to 200 Ω
1
2, 3, 5
4
C2
50 Ω
OUT
1 000 pF
2, 3, 5
To stabilize operation,
please connect R1, C5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Capacitors for VCC, input and output pins
1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output
pins.
Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be
supplied against VCC fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF
capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling
capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 π fZs).]
6
Data Sheet P13444EJ2V0DS00
µPC2747TB, µPC2748TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
AMP-2
Top View
2
3
IN
OUT
C
6
5
4
C
1S
1
C
Mounting Direction
(Marking is an example
for µ PC2747TB)
VCC
C
COMPONENT LIST
Value
Notes
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
C
1 000 pF
3. Solder plated on pattern
4.
: Through holes
For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATIONS
OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SILICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC
(P11976E).
Data Sheet P13444EJ2V0DS00
7
µPC2747TB, µPC2748TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C)
− µPC2747TB −
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
10
10
No signal
No signal
8
Circuit Current ICC (mA)
Circuit Current ICC (mA)
8
6
4
2
VCC = 3.0 V
6
4
2
VCC = 1.8 V
0
–60 –40 –20
0
0
1
2
3
4
Supply Voltage VCC (V)
0
+20 +40 +60 +80 +100
Operating Ambient Temperature TA (°C)
INSERTION POWER GAIN vs. FREQUENCY
INSERTION POWER GAIN vs. FREQUENCY
20
20
VCC = 3.0 V
15
VCC = 3.0 V
10
VCC = 2.7 V
5
0
0.1
VCC = 1.8 V
0.3
1.0
3.0
Insertion Power Gain GP (dB)
Insertion Power Gain GP (dB)
VCC = 3.3 V
TA = –40 °C
15
10
TA = +85 °C
5
0
0.1
Frequency f (GHz)
NOISE FIGURE vs. FREQUENCY
VCC = 1.8 V
Noise Figure NF (dB)
6
5
VCC = 3.0 V
4
VCC = 3.3 V
2
0.1
VCC = 2.7 V
0.3
1.0
3.0
Frequency f (GHz)
8
0.3
1.0
Frequency f (GHz)
7
3
TA = +25 °C
Data Sheet P13444EJ2V0DS00
3.0
µPC2747TB, µPC2748TB
− µPC2747TB −
INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs. FREQUENCY
ISOLATION vs. FREQUENCY
0
0
RLin (VCC = 1.8 V)
Input Return Loss RLin (dB)
Output Return Loss RLout (dB)
Isolation ISL (dB)
–10
–20
VCC = 1.8 V
–30
–40
VCC = 3.0 V
–50
0.1
0.3
1.0
–10
–20
RLin (VCC = 3.0 V)
–40
0.3
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
f = 900 MHz
VCC = 3.3 V
f = 900 MHz
VCC = 3.0 V
–5
Output Power Pout (dBm)
Output Power Pout (dBm)
–5
VCC = 3.0 V
VCC = 2.7 V
–20
–25
TA = +85 °C
TA = –40 °C
–10
TA = –40 °C
TA = +25 °C
–15
TA = +25 °C
–20
TA = +85 °C
–25
–30
–40 –35 –30 –25 –20 –15 –10
–5
–30
–40 –35 –30 –25 –20 –15 –10
0
–5
0
Input Power Pin (dBm)
Input Power Pin (dBm)
SATURATED OUTPUT POWER vs. FREQUENCY
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
VCC = 3.3 V
Third Order Intermodulation Distorition IM3 (dBc)
0
Saturared Output Power PO (sat) (dBm)
3.0
OUTPUT POWER vs. INPUT POWER
0
–15
1.0
Frequency f (GHz)
0
–10
RLout (VCC = 1.8 V)
–30
–50
0.1
3.0
RLout (VCC = 3.0 V)
Pin = –8 dBm
–5
–10
VCC = 3.0 V
VCC = 2.7 V
–15
–20
–25
0.1
0.3
1.0
Frequency f (GHz)
3.0
–50
f1 = 900 MHz
f2 = 902 MHz
–45
–40
VCC = 3.3 V
–35
VCC = 3.0 V
–30
VCC = 2.7 V
–25
–20
VCC = 1.8 V
–15
–10
–5
0
–30 –28 –26 –24 –22 –20 –18 –16 –14 –12 –10
Output Power of Each Tone PO (each) (dBm)
Data Sheet P13444EJ2V0DS00
9
µPC2747TB, µPC2748TB
S-PARAMETER (TA = +25 °C, VCC = 3.0 V)
− µPC2747TB −
S11-FREQUENCY
1.0 G
3.0 G
2.0 G
0.1 G
S22-FREQUENCY
0.1 G
1.0 G
3.0 G
10
2.0 G
Data Sheet P13444EJ2V0DS00
µPC2747TB, µPC2748TB
TYPICAL S-PARAMETER VALUES (TA = +25 °C)
µPC2747TB
VCC = 3.0 V, ICC = 5.0 mA
FREQUENCY
MHz
MAG.
S11
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
0.091
0.105
0.136
0.165
0.179
0.185
0.189
0.189
0.182
0.180
0.174
0.160
0.148
0.134
0.124
0.110
0.099
0.089
0.084
0.085
0.087
0.092
0.102
0.114
0.126
0.136
0.154
0.168
0.180
0.196
0.208
S21
ANG.
−178.3
−161.2
−166.8
−172.9
177.8
170.1
162.5
155.1
148.8
142.6
137.1
131.5
127.4
124.4
121.0
121.0
122.9
126.8
134.8
141.7
148.1
152.1
156.6
158.7
161.4
160.6
161.3
160.4
157.9
155.2
152.5
MAG.
3.732
3.997
4.075
4.105
4.141
4.098
4.124
4.104
4.061
4.016
3.977
3.948
3.799
3.736
3.582
3.506
3.317
3.190
3.040
2.901
2.736
2.645
2.507
2.395
2.312
2.218
2.136
2.036
1.952
1.847
1.757
S12
ANG.
−3.9
−13.3
−23.4
−32.9
−41.2
−49.5
−57.9
−66.3
−74.5
−83.0
−91.8
−99.5
−108.4
−115.9
−124.0
−131.7
−138.8
−145.7
−152.8
−159.0
−164.8
−170.8
−176.3
177.8
172.9
168.1
162.1
157.8
151.6
147.6
141.6
MAG.
0.001
0.002
0.002
0.004
0.004
0.005
0.006
0.008
0.009
0.012
0.013
0.015
0.016
0.019
0.022
0.023
0.025
0.028
0.030
0.032
0.034
0.035
0.037
0.038
0.041
0.042
0.042
0.044
0.044
0.043
0.045
Data Sheet P13444EJ2V0DS00
S22
ANG.
28.0
103.2
76.0
90.4
89.4
90.7
96.6
101.3
99.2
99.9
100.3
105.5
96.6
93.8
93.8
88.1
88.6
88.3
80.2
78.7
77.6
73.0
72.5
68.5
66.2
64.0
60.4
54.8
53.0
47.2
44.0
MAG.
0.290
0.294
0.292
0.286
0.298
0.302
0.307
0.309
0.313
0.316
0.318
0.318
0.318
0.313
0.311
0.312
0.308
0.305
0.305
0.303
0.299
0.304
0.304
0.305
0.317
0.319
0.323
0.331
0.330
0.332
0.331
K
ANG.
−3.7
−4.3
−3.9
−5.6
−6.9
−8.4
−10.2
−12.2
−14.4
−16.9
−19.7
−22.6
−24.9
−27.4
−30.1
−31.8
−33.3
−35.1
−37.2
−38.8
−40.9
−41.5
−42.2
−44.7
−45.8
−47.8
−50.8
−54.1
−57.5
−60.9
−65.5
98.96
64.71
46.80
29.99
25.94
20.69
17.38
12.59
12.26
9.45
8.22
7.49
7.42
6.36
5.83
5.55
5.37
5.05
4.98
4.97
4.99
4.97
4.93
5.01
4.76
4.78
4.88
4.88
5.07
5.45
5.49
11
µPC2747TB, µPC2748TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C)
− µPC2748TB −
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
10
10
No signal
No signal
8
Circuit Current ICC (mA)
Circuit Current ICC (mA)
8
6
4
2
VCC = 3.0 V
6
4
2
0
–60 –40 –20
0
0
1
2
3
4
VCC = 1.8 V
5
Supply Voltage VCC (V)
INSERTION POWER GAIN vs. FREQUENCY
25
VCC = 3.0 V
TA = –40 °C
VCC = 3.0 V
20
Insertion Power Gain GP (dB)
Insertion Power Gain GP (dB)
VCC = 3.3 V
15
VCC = 2.7 V
10
VCC = 1.8 V
5
0.3
1.0
3.0
20
15
TA = +85 °C
5
0
0.1
NOISE FIGURE vs. FREQUENCY
VCC = 1.8 V
Noise Figure NF (dB)
5
VCC = 3.0 V
4
VCC = 2.7 V
3
VCC = 3.3 V
0.3
1.0
3.0
Frequency f (GHz)
12
0.3
1.0
Frequency f (GHz)
7
6
TA = +25 °C
10
Frequency f (GHz)
2
0.1
+20 +40 +60 +80 +100
INSERTION POWER GAIN vs. FREQUENCY
25
0
0.1
0
Operating Ambient Temperature TA (°C)
Data Sheet P13444EJ2V0DS00
3.0
µPC2747TB, µPC2748TB
− µPC2748TB −
INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs. FREQUENCY
ISOLATION vs. FREQUENCY
0
0
Input Return Loss RLin (dB)
Output Return Loss RLout (dB)
RLout (VCC = 3.0 V)
Isolation ISL (dB)
–10
–20
–30
VCC = 1.8 V
–40
RLout (VCC = 1.8 V)
–10
RLin (VCC = 1.8 V)
–20
–30
RLin (VCC = 3.0 V)
–40
VCC = 3.0 V
–50
0.1
0.3
1.0
–50
0.1
3.0
0.3
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
0
VCC = 3.3 V
–5
Output Power Pout (dBm)
Output Power Pout (dBm)
–5
VCC = 3.0 V
–10
VCC = 2.7 V
–20
TA = +85 °C
TA = –40 °C
TA = –40 °C
TA = +25 °C
–10
TA = +25 °C
–15
TA = +85 °C
–20
–25
–25
f = 900 MHz
–30
–40 –35 –30 –25 –20 –15 – 10 –5
0
VCC = 3.0 V
f = 900 MHz
–30
–40 –35 –30 –25 –20 –15 –10 –5
0
Input Power Pin (dBm)
Input Power Pin (dBm)
SATURATED OUTPUT POWER vs. FREQUENCY
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
Third Order Intermodulation Distortion IM3 (dBc)
+5
Pin = –8 dBm
Saturated Output Power PO (sat) (dBm)
3.0
OUTPUT POWER vs. INPUT POWER
0
–15
1.0
Frequency f (GHz)
VCC = 3.3 V
0
–5
VCC = 3.0 V
VCC = 2.7 V
–10
–15
–20
0.1
0.3
1.0
Frequency f (GHz)
3.0
–50
–45
VCC = 3.3 V
VCC = 3.0 V
–40
VCC = 2.7 V
–35
–30
–25
VCC = 1.8 V
–20
–15
–10
–5
f1 = 900 MHz
f2 = 902 MHz
0
–30 –28 –26 –24 –22 –20 –18 –16 –14 –12 –10
Output Power of Each Tone PO (each) (dBm)
Data Sheet P13444EJ2V0DS00
13
µPC2747TB, µPC2748TB
S-PARAMETER (TA = +25 °C, VCC = 3.0 V)
− µPC2748TB −
S11-FREQUENCY
1.0 G
0.1 G
2.0 G
S22-FREQUENCY
0.1 G
3.0 G
14
1.0 G
Data Sheet P13444EJ2V0DS00
µPC2747TB, µPC2748TB
TYPICAL S-PARAMETER VALUES (TA = +25 °C)
µPC2748TB
VCC = 3.0 V, ICC = 6.0 mA
FREQUENCY
MHz
MAG.
S11
ANG.
MAG.
S21
ANG.
MAG.
S12
ANG.
MAG.
ANG.
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
0.120
0.136
0.166
0.194
0.210
0.213
0.213
0.211
0.203
0.193
0.180
0.159
0.136
0.115
0.096
0.072
0.049
0.024
0.007
0.014
0.034
0.047
0.063
0.079
0.094
0.108
0.123
0.139
0.151
0.164
0.178
−177.2
−167.3
−174.2
179.6
169.6
160.0
150.2
140.8
131.1
121.1
110.8
100.6
90.6
79.2
70.4
60.9
47.5
36.5
−6.0
−126.0
−141.3
−147.7
−156.9
−161.1
−165.5
−169.0
−174.7
−178.9
175.9
170.5
166.0
4.730
5.430
5.930
6.314
6.701
6.876
7.203
7.310
7.354
7.371
7.346
7.334
7.001
6.834
6.437
6.181
5.710
5.372
5.014
4.724
4.405
4.175
3.933
3.738
3.579
3.411
3.283
3.107
2.989
2.814
2.680
5.3
−0.2
−9.2
−18.8
−28.2
−38.8
−49.3
−60.6
−71.5
−81.9
−92.8
−102.4
−112.6
−121.3
−130.1
−138.2
−145.4
−152.5
−158.6
−164.1
−169.7
−174.7
−179.5
175.3
171.2
166.5
161.4
157.3
151.4
147.3
141.5
0.000
0.001
0.001
0.003
0.004
0.005
0.006
0.009
0.010
0.012
0.014
0.015
0.016
0.018
0.019
0.020
0.020
0.021
0.021
0.024
0.024
0.026
0.026
0.028
0.030
0.030
0.032
0.031
0.032
0.033
0.034
−30.4
19.3
97.8
125.4
108.7
107.4
98.7
114.1
107.6
98.3
99.1
97.5
91.4
84.1
84.8
82.4
78.9
73.5
74.1
74.9
71.5
73.6
71.2
69.1
63.8
64.7
64.6
58.9
53.2
51.6
47.3
0.280
0.285
0.286
0.291
0.306
0.319
0.337
0.349
0.360
0.371
0.366
0.359
0.342
0.320
0.296
0.271
0.247
0.228
0.208
0.198
0.188
0.190
0.185
0.192
0.202
0.214
0.222
0.238
0.240
0.251
0.254
−2.2
−2.4
−0.9
−2.7
−3.7
−5.4
−8.4
−12.3
−17.4
−22.7
−28.9
−35.3
−40.7
−46.0
−50.5
−53.0
−55.1
−55.7
−55.7
−52.8
−52.1
−47.8
−45.3
−44.7
−43.2
−43.6
−45.7
−47.6
−52.4
−55.8
−61.4
Data Sheet P13444EJ2V0DS00
S22
K
352.73
72.83
52.47
24.77
16.82
12.40
10.09
6.68
5.68
4.71
3.98
4.01
3.95
3.71
3.77
3.81
4.13
4.22
4.57
4.37
4.70
4.44
4.81
4.58
4.48
4.59
4.54
4.83
4.84
4.99
5.07
15
µPC2747TB, µPC2748TB
PACAGE DIMENSIONS
0.1 MIN.
6 pin super minimold (Unit: mm)
2.1 ±0.1
0 to 0.1
0.65
0.65
1.3
2.0 ±0.2
16
0.15 +0.1
–0
1.25 ±0.1
0.2 +0.1
–0
Data Sheet P13444EJ2V0DS00
0.7
0.9 ±0.1
µPC2747TB, µPC2748TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The DC cut capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P13444EJ2V0DS00
17
µPC2747TB, µPC2748TB
[MEMO]
18
Data Sheet P13444EJ2V0DS00
µPC2747TB, µPC2748TB
[MEMO]
Data Sheet P13444EJ2V0DS00
19
µPC2747TB, µPC2748TB
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8