Inchange Semiconductor Product Specification 2SD1897 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High power dissipation:PC=30W@TC=25℃ APPLICATIONS ·For low frequency power amplifier,power driver and DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-Peak 10 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1897 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=50μA , IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=50μA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=100V IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IE=-0.5A ; VCE=5V;f=5MHz Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz CONDITIONS hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 8 MHz 100 pF Inchange Semiconductor Product Specification 2SD1897 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3