CM600HG-130H Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Single IGBTMOD™ HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. C Q(8 TYP.) G M4 NUTS (3 TYP.) H J K K N C C C C Features: P £Low Drive Power £Low VCE(sat) £Super-Fast Recovery C £Isolated Baseplate for Easy G E E E E Inches Millimeters Dimensions Inches Millimeters A 7.48 190.0 J 2.33 59.2 B 5.51 140.0 K 2.41 61.2 C 1.89 48.0 L 1.61 41.0 D 2.24 57.0 M 0.71 18.0 E 4.88 124.0 N 1.50 38.0 F 0.87 22.0 P 0.20 5.0 G 0.47 12.0 Q 0.28 Dia. 7.0 Dia. H 0.55 14.0 5/08 Heat Sinking Applications: Outline Drawing and Circuit Diagram Dimensions Free-Wheel Diode £Traction £Medium Voltage Drives £High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HG-130H is a 6500V (VCES), 600 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 600 130 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM600HG-130H Single IGBTMOD™ HVIGBT Module 600 Amperes/6500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HG-130H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Topr -40 to +125 °C Collector-Emitter Voltage (VGE = 0V) VCES 6500 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, Tc = 80°C) IC 600 Amperes ICM 1200* Amperes IE 600 Amperes Emitter Surge Current** (Pulse) IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C) PC 8900 Watts Partial Discharge (V1 = 6900 Vrms, V2 = 5100 Vrms, 60 Hz (Acc. to IEC 1287)) Peak Collector Current (Pulse) Emitter Current** (Tc = 25°C) Qpd 10 pC Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb Module Weight (Typical) – 1.35 kg Viso 10200 Volts Maximum Turn-Off Switching Current (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C) – 1200 Amperes Short Circuit Capability, Maximum Pulse Width (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C) – 10 μs Maximum Reverse Recovery Instantaneous Power (VCC ≤ 4500V, die/dt ≤ 3000A/μs, Tj = 125°C) – 3600 kW Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(oprmax) rating (125°C). **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 5/08 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM600HG-130H Single IGBTMOD™ HVIGBT Module 600 Amperes/6500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol ICES Gate Leakage Current Collector-Emitter Saturation Voltage Min. Typ. Max. Units VCE = VCES, VGE = 0V, Tj = 25°C – – 10.0 mA VCE = VCES, VGE = 0V, Tj = 125°C – 30 90.0 mA VGE(th) IC = 60mA, VCE = 10V 5.0 6.0 7.0 Volts IGES VGE = VGES, VCE = 0V – – 0.5 μA Gate-Emitter Threshold Voltage Test Conditions VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C – 5.1 – Volts IC = 600A, VGE = 15V, Tj = 125°C – 5.0 – Volts Input Capacitance Cies VCE = 10V, VGE = 0V, – 124 – nF Output Capacitance Coes f = 100kHz, – 7.6 – nF Reverse Transfer Capacitance Cres Tj = 25°C – 2.2 – nF Total Gate Charge QG VCC = 3600V, IC = 600A, VGE = 15V – 9.9 – μC Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V, Tj = 25°C – 4.0 – Volts IE = 600A, VGE = 0V, Tj = 125°C – 3.6 – Volts Turn-On Delay Time td(on) VCC = 3600V, IC = 600A, – 1.2 – Turn-On Rise Time tr VGE1 = -VGE2 = 15V, RG(on) = 10Ω, – 0.35 – μs μs Eon Tj = 125°C, toff = 60μs – 4.5 – J/P Turn-Off Delay Time td(off) VCC = 3600V, IC = 600A, – 6.6 – Turn-Off Fall Time 1 tf1 VGE1 = -VGE2 = 15V, – 0.5 – Turn-Off Fall Time 2 tf2 RG(off) = 24Ω, – 3.3 – μs μs μs Turn-On Switching Energy Turn-Off Switching Energy Eoff Tj = 125°C, toff = 60μs – 3.5 – J/P Reverse Recovery Time 1** trr1 VCC = 3600V, IE = 600A, – 1.0 – Reverse Recovery Time 2** trr2 die/dt = -2000A/μs, – 2.4 – Reverse Recovery Charge** Qrr Tj = 125°C, – 1100 – μs μs μC Reverse Recovery Energy** Erec toff = 60μs – 2.0 – J/P Test Conditions Min. Typ. Max. Units * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 14.0 K/kW Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 22.0 K/kW Rth(c-f) Per Module, Thermal Grease Applied – 6.0 – K/kW Contact Thermal Resistance, Case to Fin Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Comparative Tracking Index Symbol Test Conditions Min. Typ. Max. Units CTI – 600 – – – Clearance – – 26.0 – – mm Creepage Distance – – 56.0 – – mm Internal Inductance LC-E(int) – – 18 – nH Internal Lead Resistance RC-E(int) – – 0.18 – mΩ 5/08 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM600HG-130H Single IGBTMOD™ HVIGBT Module 600 Amperes/6500 Volts OUTPUT CHARACTERISTICS (TYPICAL) 14V VGE = 20V 4000 13V 12V 3000 2000 10V 1000 0 4 8 12 16 20 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 1400 VCC = 3600V VGE = ±15V RG(on) = 10Ω LS = 150nH Tj = 125°C 3.0 2.5 2.0 1.5 1.0 0.5 0 0 200 400 600 800 1000 1200 1400 FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) 2.5 2.0 1.5 1.0 0.5 0 200 400 600 800 1000 1200 1400 3.5 REVERSE RECOVERY CHARGE, Qrr, (J/PULSE) VCC = 3600V VGE = ±15V RG(on) = 10Ω LS = 150nH Tj = 125°C 3.0 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 35 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C 3.0 2.5 2.0 1.5 1.0 0.5 0 40 0 5 10 15 20 25 30 35 GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) TRANSFER CHARACTERISTICS (TYPICAL) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) 8000 6000 4000 100 VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 2000 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 10-1 102 40 101 SWITCHING TIME, td(on), (ns) 101 0 3.5 EMITTER CURRENT, IE, (AMPERES) VCE = 5V Tj = 25°C Tj = 125°C 10000 0 3.5 EMITTER CURRENT, IE, (AMPERES) SWITCHING TIME, td(off), (ns) COLLECTOR CURRENT, IC, (AMPERES) VGE = 0V Tj = 25°C Tj = 125°C 7 EMITTER CURRENT, IE, (AMPERES) 12000 4 8 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 3.5 0 FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY, Erec, (J/PULSE) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) 15V 18V 5000 0 REVERSE RECOVERY CHARGE, Qrr, (J/PULSE) 16V Tj = 25°C REVERSE RECOVERY ENERGY, Erec, (J/PULSE) COLLECTOR CURRENT, IC, (AMPERES) 6000 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 COLLECTOR CURRENT, IC, (AMPERES) 104 100 VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 10-1 102 103 104 COLLECTOR CURRENT, IC, (AMPERES) 5/08 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM600HG-130H Single IGBTMOD™ HVIGBT Module 600 Amperes/6500 Volts RISE TIME VS. COLLECTOR CURRENT (TYPICAL) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 101 100 VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 10-1 102 103 2 200 400 600 800 1000 1200 1400 0 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 4 2 8 6 4 2 0 200 400 600 800 1000 1200 1400 10 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C SWITCHING LOSS, Eon, (mJ/PULSE) 6 0 5 10 15 20 25 30 8 6 4 2 0 35 40 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C 0 5 10 15 20 25 30 35 40 COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDI) 102 101 Coes VGE = 15V f = 100kHz Tj = 25°C 100 Cres 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 1.2 8 VGE = 0V Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 1400 COLLECTOR CURRENT, IC, (AMPERES) TRANSIENT IMPEDANCE, Rth(j-c) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) Cies 100 10-1 4 0 104 10 0 6 SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, (mJ/PULSE) 103 8 COLLECTOR CURRENT, IC, (AMPERES) 103 CAPACITANCE, Cies, Coes, Cres, (pF) VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) 8 5/08 100 10-1 102 104 10 0 10 SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING TIME, tr, (ns) SWITCHING TIME, tf, (ns) 101 SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) 1.0 0.8 SINGLE PULSE TC = 25°C IGBT = Rth(j-c)Q = 14°K/kW FWDI = Rth(j-c)D = 22°K/kW 0.6 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) 5