QIS2510001 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Single Discrete IGBT 100 Amperes/2500 Volts A C D H E E (3) G F G (2) B C (BASE) E (1) J Q P N Description: Powerex Single Non-isolated Discrete is designed specially for customer high voltage switching and pulse power applications. L K M Features: E (1) C (BASE) E (3) G (2) Low Drive Requirement Low VCE(sat) Molybdenum Mounting Plate Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Inches Millimeters A 2.11 53.6 J 0.14 3.6 B 0.98 25.0 K 0.22 5.7 C 2.01 51.0 L 0.43 10.8 D 0.2 5.0 M 0.04 1.0 E. 0.1 2.5 N 0.43 10.9 F 0.27 6.9 P 0.02 0.5 G 0.49 12.5 Q 0.21 Dia. 5.3 Dia. H 0.46 Max. 11.8 Max. 01/10 Rev. 0 Dimensions 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS2510001 Single Discrete IGBT 100 Amperes/2500 Volts Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QIS2510001 Units Collector Emitter Voltage VCES 2500 Volts Gate Emitter Voltage VGES ±20 Volts IC 100 Amperes Collector Current (DC, TC = 127°C) Peak Collector Current (Pulsed) ICM 200* Amperes Junction Temperature Tj -55 to 150 °C Storage Temperature Tstg -55 to 125 °C Mounting Torque, M5 Mounting Screws — 30 in-lb Weight (Typical) — 20 Grams Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Total Gate Charge QG IC = 100A, VGE = 15V, Tj = 25°C — 3.20 4.20** Volts IC = 100A, VGE = 15V, Tj = 125°C — 3.60 — Volts VCC = 1250V, IC = 100A, VGE = 15V — 450 — nC Min. Typ. Max. Units Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies — 10 — nF Output Capacitance Coes — 1.1 — nF VGE = 0V, VCE = 10V Reverse Transfer Capacitance Cres — 330 — pF Resistive Turn-on Delay Time td(on) VCC = 1250V, — — TBD µs Load Rise Time tr IC = 100A, — — TBD µs Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, — — TBD µs Times Fall Time tf RG = 30Ω — — TBD µs Turn-on Switching Energy Eon Tj = 125°C, IC = 100A, VCC = 1250V, — 125 — mJ/P Turn-off switching Energy Eoff VGE = ±15V, RG = 30Ω, Inductive Load — 100 — mJ/P Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) IGBT — 0.10 TBD °C/W Thermal Resistance, Case to Sink Rth(c-s) λgrease = 1W/mK — 0.10 — °C/W Thermal Grease Applied * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed device rating. **Pulse width and repetition rate should be such that device junction temperature rise is negligible. 2 01/10 Rev. 0 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS2510001 Single Discrete IGBT 100 Amperes/2500 Volts OUTPUT CHARACTERISTICS (TYPICAL) 15V 150 11V VGE = 20V 100 10V 50 9V 0 4 6 8 50 0 10 0 4 8 16 12 4 3 2 1 0 20 0 50 100 200 150 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 102 Tj = 25°C 8 IC = 200A 6 IC = 100A IC = 40A 4 2 0 100 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTAGE) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 8V 150 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 250 Cies 101 Coes 100 10-1 SWITCHING ENERGY, (mJ/P) 0 7V 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 14V 13V 12V COLLECTORCURRENT, IC, (AMPERES) 200 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) VGE = 0V Tj = 25°C Cies, Coes: f = 100kHz Cres: f = 1MHz 10-1 100 200 150 Eon 100 Eoff 50 Cres 101 VCC = 1250V VGE = ±15V RG = 30Ω Tj = 125°C 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 25 50 75 100 125 COLLECTOR CURRENT, IC, (AMPERES) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 VCC = 1250V IC = 100A 16 12 8 4 0 0 250 500 750 1000 GATE CHARGE, QG, (nC) 01/10 Rev. 0 3