CM150TL-12NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Six IGBTMOD™ NF-Series Module 150 Amperes/600 Volts A D E F G K H J M J N 8 1 1 1 1 B C CN UP B U V N W Q U L T K K S V WP AB AA P K VP K R R P K R K X W Y P B CN-7 CN-8 NC UP-1 UP-2 VP-1 VP-2 WP-1 WP-2 U V W CN-5 CN-3 CN-1 CN-6 CN-4 CN-2 NC NC N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.72 2.17 1.39 4.17±0.02 0.43 0.28 0.54 1.61 0.67 0.47 M5 0.22 Dia. Millimeters 120.0 55.0 35.0 106.0±0.5 11.0 7.0 13.62 40.78 17.0 12.0 M5 Dia. 5.5 Dimensions Inches Millimeters N 1.23 32.0 P 0.47 11.75 Q 0.53 13.5 R 0.91 23.0 S 0.87 22.0 T 0.76 19.75 U 0.42 10.75 V 0.87+0.04/-0.02 22.0+1.0/-0.5 W 0.91 23.2 X 0.63 16.0 Y 0.12 3.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Photovoltaic/Fuel Cell Housing Types (J.S.T. Mfg. Co. Ltd.) Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM150TL-12NF is a 600V (VCES), 150 Ampere Six-IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 12 AA – B8P-VH-FB-B AB – B2P-VH-FB-B 10/10 Rev. 1 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150TL-12NF Six IGBTMOD™ NF-Series Module 150 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Power Device Junction Temperature Storage Temperature CM150TL-12NF Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 93°C)* Peak Collector Current (Tj ≤ 150°C) IC 150 Amperes ICM 300** Amperes Emitter Current*** IE 150 Amperes Peak Emitter Current*** IEM 300** Amperes Maximum Collector Dissipation (TC = 25°C, Tj < 150°C) PC 730 Watts Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb Module Weight (Typical) — 350 Grams VISO 2500 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 15mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts IC = 150A, VGE = 15V, Tj = 125°C — 1.7 — Volts — — 23.0 nf — — 2.8 nf — — 0.9 nf — 600 — nC — — 120 ns Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge Units QG VCE = 10V, VGE = 0V VCC = 300V, IC = 150A, VGE = 15V Inductive Turn-on Delay Time Load Turn-on Rise Time tr VCC = 300V, IC = 150A, — — 100 ns Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, — — 300 ns Time Turn-off Fall Time Reverse Recovery Time*** td(on) tf RG = 4.2Ω, IE = 150A, — — 300 ns trr Inductive Load Switching Operation — — 150 ns — 2.5 — µC — — 2.8 Volts Reverse Recovery Charge*** Qrr Emitter-Collector Voltage*** VEC IE = 150A, VGE = 0V *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 10/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150TL-12NF Six IGBTMOD™ NF-Series Module 150 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/6 Module — — 0.17 °C/W Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/6 Module — — 0.31 °C/W Rth(c-f) Per 1/6 Module, Thermal Grease Applied — — 0.085 °C/W 4.2 — 42 Ω Contact Thermal Resistance External Gate Resistance RG *TC, Tf measured point is just under the chips. COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 225 12 150 11 75 10 8 0 2 4 6 9 8 1 0 75 150 225 8 IC = 300A 6 4 IC = 60A 2 0 300 IC = 150A 6 8 10 12 14 16 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 Tj = 25°C Tj = 125°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 2 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 101 3 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10/10 Rev. 1 5 Cies 101 Coes 100 Cres 10-1 10-1 20 103 VGE = 0V SWITCHING TIME, (ns) 0 4 Tj = 25°C VGE = 20V 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) tf td(off) 102 td(on) tr 101 101 VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive Load 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150TL-12NF Six IGBTMOD™ NF-Series Module 150 Amperes/600 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 10-2 10-3 VCC = 300V 12 8 4 0 0 200 400 600 800 1000 VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 10-1 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 Err 100 10-1 101 VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus 102 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-1 VCC = 200V GATE CHARGE, QG, (nC) VCC = 300V VGE = ±15V IC = 150A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 10-3 16 101 EMITTER CURRENT, IE, (AMPERES) 100 100 100 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 103 102 IC = 150A 103 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 102 103 VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive Load Irr trr REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE Err 100 VCC = 300V VGE = ±15V IE = 150A Tj = 125°C Inductive Load C Snubber at Bus 10-1 100 101 102 GATE RESISTANCE, RG, (Ω) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.17°C/W (IGBT) Rth(j-c) = 0.31°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 10/10 Rev. 1