RICHTEK RT8223A

RT8223A/B
High Efficiency, Main Power Supply Controller
for Notebook Computers
General Description
Features
The RT8223A/B dual step-down, switch-mode powersupply controller generates logic-supply voltages in
battery-powered systems. The RT8223A/B includes two
pulse-width modulation (PWM) controllers fixed at 5V/
3.3V or adjustable from 2V to 5.5V. This device also
features 2 linear regulators providing fixed 5V and 3.3V
outputs. The linear regulator each provides up to 70mA
output current with automatic linear-regulator bootstrapping
to the PWM outputs. The RT8223A/B includes on-board
power-up sequencing, the power good output, internal softstart, and internal soft-discharge output that prevents
negative voltages on shutdown.
z
A constant on-time PWM control scheme operates without
sense resistor and provides 100ns response to load
transients while maintaining a relatively constant switching
frequency. The unique ultrasonic mode maintains the
switching frequency above 25kHz, which eliminates noise
in audio applications. Other features include diodeemulation mode (DEM), which maximizes efficiency in
light-load applications, and fixed-frequency PWM mode,
which reduces RF interference in sensitive application
z
z
z
z
z
z
z
z
z
z
z
z
Wide Input Voltage Range 6V to 25V
Dual Fixed 5V/3.3V Outputs or Adjustable from 2V
to 5.5V, 1.5% Accuracy
Fixed 3.3V and 5V LDO Output : 70mA
μA
2V Reference Voltage ±1% : 50μ
Constant ON-Time Control with 100ns Load Step
Response
Frequency Selectable via TONSEL Setting
RDS(ON) Current Sensing and Programmable Current
Limit combined with Enable Control
Selectable PWM, DEM, or Ultrasonic Mode
Internal Soft-Start and Soft-Discharge
High Efficiency up to 97%
5mW Quiescent Power Dissipation
Thermal Shutdown
RoHS Compliant and Halogen Free
Applications
z
z
Notebook and Sub-Notebook Computers
3-Cell and 4-Cell Li+ Battery-Powered Devices
Marking Information
Ordering Information
RT8223
Package Type
QW : WQFN-24L 4x4 (W-Type)
For marking information, contact our sales representative
directly or through a Richtek distributor located in your
area.
Lead Plating System
G : Green (Halogen Free and Pb Free)
Z : ECO (Ecological Element with
Halogen Free and Pb free)
Pin Function
A : Default
B : With ENC
Note :
Richtek products are :
`
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
`
Suitable for use in SnPb or Pb-free soldering processes.
DS8223A/B-04 April 2011
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1
RT8223A/B
Pin Configurations
VOUT1
PGOOD
BOOT1
UGATE1
PHASE1
LGATE1
VOUT1
PGOOD
BOOT1
UGATE1
PHASE1
LGATE1
(TOP VIEW)
24 23 22 21 20 19
ENTRIP1
FB1
REF
TONSEL
FB2
ENTRIP2
24 23 22 21 20 19
1
18
2
17
3
16
GND
4
15
25
5
14
13
6
9
1
18
2
17
3
16
GND
4
15
25
5
14
13
6
10 11 12
7
8
9
ENC
VREG5
VIN
PGND
SKIPSEL
EN
10 11 12
VOUT2
VREG3
BOOT2
UGATE2
PHASE2
LGATE2
8
ENTRIP1
FB1
REF
TONSEL
FB2
ENTRIP2
VOUT2
VREG3
BOOT2
UGATE2
PHASE2
LGATE2
7
NC
VREG5
VIN
PGND
SKIPSEL
EN
RT8223A
RT8223B
WQFN-24L 4x4
WQFN-24L 4x4
Typical Application Circuit
For Fixed Voltage Regulator
V IN
R7
3.9
C1
10µF
C6
0.1µF
Q1
BSC119
N03S
V OUT1
5V
C3
220µF
R5
C4
16 VIN
BOOT2
PHASE2 11
R3 0
22 BOOT1
LGATE2 12
C11
0.22µF
R9
0
Q2
BSC119
N03S
R8 0
C7
0.1µF
24 VOUT1
3 REF
Frequency Control
4 TONSEL
PWM/DEM/Ultrasonic
14 SKIPSEL
13 EN
2 FB1
VOUT2 7
VREG5 17
PGOOD 23
VREG3 8
C5
4.7µF
GND
C8
10µF
R10
V OUT2
3.3V
C13
220µF
C10
5V Always On
R6
100k
PGOOD Indicator
C12
4.7µF
ENTRIP1 1
ENTRIP2
C9
10µF
L2
4.7µH
Q4
BSC119
N03S
PGND 15
20 PHASE1
19 LGATE1
ON
9
21 UGATE1
Q3
BSC119
N03S
OFF
UGATE2 10
R4 0
C2
0.1µF
L1
6.8µH
RT8223A
6
3.3V Always On
R1
150k
R2
150k
Exposed Pad (25)
5 FB2
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2
DS8223A/B-04 April 2011
RT8223A/B
V IN
R7
3.9
C1
10uF
C10
0.1µF
Q1
BSC119
N03S
V OUT1
5V
C3
220µF
R5
C4
BOOT2
9
21 UGATE1
PHASE2 11
R3 0
22 BOOT1
LGATE2 12
PGND
20 PHASE1
19 LGATE1
Q3
BSC119
N03S
24 VOUT1
ON
OFF
C15
0.22µF
ON
18 ENC
3 REF
13 EN
OFF
DS8223A/B-04 April 2011
UGATE2 10
R4 0
C2
0.1µF
L1
6.8µH
RT8223B
16 VIN
Frequency Control
4 TONSEL
PWM/DEM/Ultrasonic
14 SKIPSEL
R9
0
Q2
BSC119
N03S
R8 0
C7
0.1µF
VOUT2 7
VREG5 17
PGOOD 23
VREG3 8
C9
4.7µF
V OUT2
3.3V
C17
220µF
R10
C14
5V Always On
R6
100k
PGOOD Indicator
C16
4.7µF
ENTRIP1 1
ENTRIP2
C12
10µF
L2
4.7µH
Q4
BSC119
N03S
15
C13
10µF
6
3.3V Always On
R1
150k
R2
150k
FB1 2
FB2 5
GND
Exposed Pad (25)
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3
RT8223A/B
For Adjustable Voltage Regulator
V IN
R7
3.9
C1
10µF
C6
0.1µF
Q1
BSC119
N03S
C3
220µF
21 UGATE1
PHASE2 11
R3 0
22 BOOT1
LGATE2 12
C4
19 LGATE1
C15
0.1µF
R11
15k
ENTRIP2
R12
10k
C11
0.22µF
GND
Frequency Control
PWM/DEM/Ultrasonic
14 SKIPSEL
ON
R13
6.5k
C17
C16
0.1µF
R14
10k
5V Always On
C5
4.7µF
PGOOD 23
VREG3 8
13 EN
C10
Exposed Pad (25)
VREG5 17
4 TONSEL
C13
220µF
R2
150k
6
V OUT2
3.3V
R10
R1
150k
ENTRIP1 1
2 FB1
3 REF
C8
10µF
L2
4.7µH
Q4
BSC119
N03S
VOUT2 7
5
FB2
24 VOUT1
C14
C7
0.1µF
PGND 15
20 PHASE1
C9
10µF
Q2
BSC119
N03S
R8 0
9
R4 0
Q3
BSC119
N03S
R5
UGATE2 10
BOOT2
C2
0.1µF
L1
6.8µH
V OUT1
5V
R9
0
RT8223A
16 VIN
R6
100k
PGOOD Indicator
3.3V Always On
C12
4.7µF
OFF
V IN
R7
3.9
C1
10µF
RT8223B
C10
0.1µF
R4 0
Q1
BSC119
N03S
C3
220µF
R5
C4
BOOT2
C19
0.1µF
PHASE2 11
22 BOOT1
LGATE2 12
20 PHASE1
19 LGATE1
Q3
BSC119
N03S
2 FB1
ON
OFF
18 ENC
3 REF
C15
0.22µF
ON
13 EN
OFF
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4
R9
0
Q2
BSC119
N03S
R8 0
C7
0.1µF
Frequency Control
4 TONSEL
PWM/DEM/Ultrasonic
14 SKIPSEL
C12
10µF
L2
4.7µH
Q4
BSC119
N03S
V OUT2
3.3V
C17
220µF
R10
C14
VOUT2 7
R13
6.5k
FB2 5
R11
15k
R12
10k
9
21 UGATE1
24 VOUT1
C18
UGATE2 10
PGND 15
C2
0.1µF
L1
6.8µH
V OUT1
5V
R3 0
16 VIN
C13
10µF
R1
150k
ENTRIP1 1
ENTRIP2
GND
R14
10k
C21
C20
0.1µF
R2
150k
6
Exposed Pad (25)
VREG5 17
PGOOD 23
VREG3 8
C9
4.7µF
5V Always On
R6
100k
PGOOD Indicator
C16
4.7µF
3.3V Always On
DS8223A/B-04 April 2011
RT8223A/B
Function Block Diagram
TONSEL SKIPSEL
BOOT1
BOOT2
UGATE1
UGATE2
PHASE2
PHASE1
VREG5
VREG5
SMPS1
PWM Buck
Controller
LGATE1
SMPS2
PWM Buck
Controller
LGATE2
PGND
VOUT2
FB2
ENTRIP2
VOUT1
FB1
ENTRIP1
PGOOD
Power-On
Sequence
Clear Fault Latch
EN
ENC
GND
SW Threshold
SW Threshold
Thermal
Shutdown
VREG3
VREG5
REF
VREG5
VREG3
VIN
REF
Function Block Diagram
TONSEL
VIN
UGATE
On-Time
Compute
VOUT
TON
Q
R
1-Shot
TOFF
TRIG 1-Shot
Q
TRIG
REF
-
+
- Comp
+
+ -
LGATE
FB
1.1 x VREF
0.6 x VREF
Over-Voltage
+
Fault
Latch
-
VREG5
Blanking
Time
+
Under-Voltage
+
0.9 x VREF
PGOOD
+
ENTRIP
-
+
S +
SS
Time
25kHz
Detector Zero
Detector
Current
Limit
+
PHASE
-
SKIPSEL
PWM Controller (One Side)
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5
RT8223A/B
Functional Pin Description
ENTRIP1 (Pin 1)
VOUT2 (Pin 7)
Channel 1 enable and Current Limit setting Input. Connect
a resistor to GND to set the threshold for channel 1
synchronous RDS(ON) sense. The GND − PHASE1 current-
SMPS2 Output Voltage Sense Input. Connect to the
SMPS2 output. VOUT2 is an input to the on-time one
shot circuit. It also serves as the SMPS2 feedback input
in fixed voltage mode.
limit threshold is 1/10th the voltage seen at ENTRIP1 over
a 0.5V to 2V range. There is an internal 10μA current
source from VREG5 to ENTRIP1.
VREG3 (Pin 8)
3.3V Linear Regulator Output.
FB1 (Pin 2)
SMPS1 Feedback Input. Connect FB1 to VREG5 or GND
for fixed 5V operation. Or connect FB1 to a resistive voltagedivider from VOUT1 to GND to adjust output from 2V to
5.5V.
BOOT2 (Pin 9)
REF (Pin 3)
UGATE2 (Pin 10)
2V Reference Output. Bypass to GND with a 0.22μF
capacitor. REF can source up to 50μA for external loads.
Loading REF degrades FBx and output accuracy according
to the REF load regulation error.
High-Side MOSFET Floating Gate Driver Output for
SMPS2. UGATE2 swings between PHASE2 and BOOT2.
TONSEL (Pin 4)
Frequency Selectable Input for VOUT1/VOUT2
respectively.
400kHz/500kHz : Connect to VREG5 or VREG3
300kHz/375kHz : Connect to REF
Boost Flying Capacitor Connection for SMPS2. Connect
to an external capacitor according to the typical application
circuits.
PHASE2 (Pin 11)
Inductor Connection for SMPS2. PHASE2 is the internal
lower supply rail for the UGATE2 high side gate driver.
PHASE2 is also the current-sense input for the SMPS2.
LGATE2 (Pin 12)
SMPS2 Synchronous-Rectifier Gate-Drive Output.
LGATE2 swings between PGND and VREG5.
200kHz/250kHz : Connect to GND
EN (Pin 13)
FB2 (Pin 5)
SMPS2 Feedback Input. Connect FB2 to VREG5 or GND
for fixed 3.3V operation. Or connect FB2 to a resistive
voltage-divider from VOUT2 to GND to adjust output from
2V to 5.5V.
Master Enable Input. The REF/VREG5/VREG3 are
enabled if it is within logic high level and disabled if it is
less than the logic low level.
SKIPSEL (Pin 14)
Operation Mode Selectable Input.
ENTRIP2 (Pin 6)
Channel 2 enable and Current Limit setting Input. Connect
a resistor to GND to set the threshold for channel 2
synchronous RDS(ON) sense. The GND − PHASE2 current
limit threshold is 1/10th the voltage seen at ENTRIP2 over
a 0.5V to 2V range. There is an internal 10μA current
source from VREG5 to ENTRIP2.
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6
Ultrasonic Mode : Connect to VREG5 or VREG3
Diode Emulation Mode : Connect to GND
PWM Mode : Connect to REF
GND [Exposed Pad (25)]
Analog Ground for SMPS controller. The exposed pad
must be soldered to a large PCB and connected to GND
for maximum power dissipation.
DS8223A/B-04 April 2011
RT8223A/B
PGND (Pin 15)
VOUT1 (Pin 24)
Power Ground for SMPS controller. Connect PGND
externally to the underside of the exposed pad.
SMPS1 Output Voltage-Sense Input. Connect to the
SMPS1 output. VOUT1 is an input to the on-time one
shot circuit. It also serves as the SMPS1 feedback input
in fixed-voltage mode.
VIN (Pin 16)
High Voltage Power Supply Input for 5V/3.3V LDO and
Feed-forward ON-Time circuitry.
VREG5 (Pin 17)
5V Linear Regulator Output.VREG5 is also the supply
voltage for the low-side MOSFET driver and analog supply
voltage for the device.
NC (Pin 18) (RT8223A)
No Internal Connection.
ENC (Pin 18) (RT8223B)
SMPSx Enable Input. Pull up to VREG3 or VREG5 to
turn on both switcher channels. Short to GND to shutdown
them.
LGATE1 (Pin 19)
SMPS1 Synchronous Rectifier Gate Drive Output. LGATE1
swings between PGND and VREG5.
PHASE1 (Pin 20)
Inductor Connection for SMPS1. PHASE1 is the internal
lower supply rail for the UGATE1 high side gate driver.
PHASE1 is also the current sense input for the SMPS1.
UGATE1 (Pin 21)
High-Side MOSFET Floating Gate Driver Output for
SMPS1. UGATE1 swings between PHASE1 and BOOT1.
BOOT1 (Pin 22)
Boost Flying Capacitor Connection for SMPS1. Connect
to an external capacitor according to the typical application
circuits.
PGOOD (Pin 23)
Power Good Output for channel 1 and channel 2. (Logical
AND)
DS8223A/B-04 April 2011
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7
RT8223A/B
Absolute Maximum Ratings
(Note 1)
VIN, EN to GND -------------------------------------------------------------------------------------------------------------- –0.3V to 30V
z PHASEx to GND
DC ------------------------------------------------------------------------------------------------------------------------------- –0.3V to 30V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −8V to 38V
z BOOTx to PHASEx --------------------------------------------------------------------------------------------------------- –0.3V to 6V
z ENTRIPx, SKIPSEL, TONSEL, PGOOD, to GND ------------------------------------------------------------------- –0.3V to 6V
z VREG5, VREG3, FBx, VOUTx, ENC, REF to GND ---------------------------------------------------------------- –0.3V to 6V
z UGATEx to PHASEx
DC ------------------------------------------------------------------------------------------------------------------------------- –0.3V to 6V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −5V to 7.5V
z LGATEx to GND
DC ------------------------------------------------------------------------------------------------------------------------------- –0.3V to 6V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −2.5V to 7.5V
z Power Dissipation, PD @ TA = 25°C
WQFN-24L 4x4 -------------------------------------------------------------------------------------------------------------- 1.923W
z Package Thermal Resistance (Note 2)
WQFN-24L 4x4, θJA --------------------------------------------------------------------------------------------------------- 52°C/W
WQFN-24L 4x4, θJC -------------------------------------------------------------------------------------------------------- 7°C/W
z Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------------------- 260°C
z Junction Temperature ------------------------------------------------------------------------------------------------------- 150°C
z Storage Temperature Range ---------------------------------------------------------------------------------------------- –65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Mode) ------------------------------------------------------------------------------------------------ 2kV
MM (Machine Mode) -------------------------------------------------------------------------------------------------------- 200V
z
Recommended Operating Conditions
z
z
z
(Note 4)
Input Voltage, VIN ------------------------------------------------------------------------------------------------------------ 6V to 25V
Junction Temperature Range ---------------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range ---------------------------------------------------------------------------------------------- −40°C to 100°C
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DS8223A/B-04 April 2011
RT8223A/B
Electrical Characteristics
(VIN = 12V, EN = ENC = 5V, ENTRIP1 = ENTRIP2 = 2V, No Load on VREG5, VREG3, VOUT1, VOUT2 and REF, TA = 25°C,
unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Supply
VIN Standby Supply
Current
VIN Shutdown Supply
Current
Quiescent Power
Consumption
IVIN_SBY
VIN = 6V to 25V, Both SMPS Off,
EN = 5V, ENC = GND
--
200
--
μA
IVIN_SHDH
VIN = 6V to 25V, ENTRIPx = EN = GND
--
20
40
μA
Both SMPSs On, FBx = SKIPSEL = REF
VOUT1 = 5.3V, VOUT2 = 3.5V
(Note 5)
--
5
7
mW
4.975
5.05
5.125
V
3.285
3.33
3.375
V
SMPS Output and FB Voltage
VOUT1 Output Voltage in
Fixed Mode
VOUT2 Output Voltage in
Fixed Mode
FBx in Output Adjustable
Mode
Output Voltage
Adjustment Range
FBx Adjustable-mode
Threshold Voltage
V OUT2
VIN = 6V to 25V, FB1= REF or 5V,
SKIPSEL = REF
VIN = 6V to 25V, FB2 = REF or 5V,
SKIPSEL = REF
FBx
VIN = 6V to 25V
1.975
2
2.025
V
V OUT x
SMPS1, SMPS2
2
--
5.5
V
Fixed or Adj-Mode comparator threshold
0.2
0.4
0.55
V
Either SMPS, SKIPSEL = REF, 0 to 5A
Either SMPS, SKIPSEL = VREG5, 0 to 5A
Either SMPS, SKIPSEL = GND, 0 to 5A
Either SMPS, VIN = 6V to 25V
-----
−0.1
−1.7
−1.5
0.005
-----
V OUT1 = 5.05V
1895
2105
2315
V OUT2 = 3.33V
999
1110
1221
TONSEL = REF
V OUT1 = 5.05V
V OUT2 = 3.33V
1227
647
1403
740
1579
833
TONSEL = VREG5
V OUT1 = 5.05V
V OUT2 = 3.33V
895
475
1052
555
1209
635
200
300
400
ns
SKIPSEL = VREG5 or VREG3
20
28
--
kHz
Zero to Full Limit from ENTRIPx Enable
--
2
--
ms
V ENTRIPx = VREG5, GND−PHASEx
180
200
220
mV
V ENTRIPx = 0.9V
9.4
10
10.6
μA
--
1600
--
PPM/°C
0.5
--
2
V
V OUT1
DC Load Regulation
V LOAD
Line Regulation
VLINE
%
%/V
On Time
TONSEL = GND
On-Time Pulse Width
Minimum Off-Time
Ultrasonic Mode
Frequency
tUGATEx
tLGATEx
ns
Soft Start
Soft-Start Time
tSSx
Current Sense
Current Limit Threshold
(Default)
ENTRIPx Source Current
ENTRIPx Current
Temperature Coefficient
ENTRIPx Adjustment
Range
IENTRIPx
TC IENTRIPx
V ENTRIPx = IENTRIPx x R ENTRIPx
To be continued
DS8223A/B-04 April 2011
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9
RT8223A/B
Parameter
Symbol
Current Limit Threshold
Test Conditions
GND−PHASEx, VENTRIPx =2V
SKIPSEL = VREG5 or GND,
GND−PHASEx
Zero-Current Threshold
Min
Typ
Max
Unit
180
200
220
mV
--
3
--
mV
4.8
5
5.2
V
3.2
3.33
3.46
V
Internal Regulator and Reference
VOUT1 = GND, 6V < VIN < 25V,
0 < I VREG5 < 70mA
VOUT2 = GND, 6V < VIN < 25V,
0 < I VREG3 < 70mA
VREG5 Output Voltage
VVREG5
VREG3 Output Voltage
VVREG3
VREG5 Short Current
IVREG5
VREG5 = GND, VOUT1 = GND
--
175
275
mA
VREG3 Short Current
IVREG3
VREG3 = GND, VOUT2 = GND
--
175
275
mA
4.53
4.66
4.79
V
2.98
3.08
3.18
V
--
1.5
3
Ω
VREG5 Switchover Threshold
to VOUT1
VREG3 Switchover Threshold VSW3
Rising Edge at VOUT1 Regulation
Point
Rising Edge at VOUT2 Regulation
Point, Hysteresis = 6%
VREGx Switchover Equivalent
RSW
Resistance
REF Output Voltage
VREF
No External Load
1.98
2
2.02
V
REF Load Regulation
0 < ILOAD < 50uA
--
10
--
mV
REF Sink Current
REF in Regulation
5
--
--
μA
SMPSx off
--
2.5
--
V
Rising Edge
--
4.35
4.5
V
Falling Edge
3.9
4.05
4.25
V
PGOOD Detect (FBx Rising Edge)
−11
−7.5
−4
Hysteresis
--
8
--
PGOOD Propagation Delay
Falling Edge, 50mV Overdrive
--
10
--
μs
PGOOD Leakage Current
High State, Forced to 5.5V
--
--
1
μA
PGOOD Output Low Voltage
ISINK = 4mA
--
--
0.3
V
108
111
115
%
--
10
--
μs
UVP Detect (FBx Falling Edge)
46
52
58
Hysteresis
--
8
--
--
3
--
ms
--
150
--
°C
--
10
--
°C
10
2.5
60
--
---
mA
mA
VREGx to VOUTx, 10mA
UVLO
VREG3 UVLO Threshold
VREG5 UVLO Threshold
Power Good
PGOOD Threshold
VPGOODx
%
Fault Detection
OVP Trip Threshold
VFB_OVP
FBx with Respect to Internal
Reference
OVP Propagation Delay
UVP Trip Threshold
VUV
UVP Shutdown Blanking Time tSHDN_UVP From ENTRIPx Enable
%
Thermal Shutdown
Thermal Shutdown
TSHDN
Thermal Shutdown Hysteresis
Discharge
VOUTx Discharge Current
VREGx Discharge Current
IDISx
ENTRIPx = ENC = 0V, VOUTx = 0.5V
EN = 0V, VREGx = 0.5V
To be continued
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10
DS8223A/B-04 April 2011
RT8223A/B
Parameter
Symbol
Test Conditions
Min
Typ
Max
Low Level (Internal Fixed VOUTx)
--
--
0.2
High Level (Internal Fixed VOUTx)
4.5
--
--
Low Level (DEM Mode)
--
--
0.8
REF Level (PWM Mode)
1.8
--
2.3
High Level (Ultrasonic Mode)
Unit
Logic Input
FB1/FB2 Input Voltage
SKIPSEL Input Voltage
ENTRIPx Input Voltage
V ENTRIPx
2.7
--
--
Low Level (SMPSs Off)
--
--
0.35
On Level (SMPSs On)
0.5
--
2
High Level (SMPSs Off)
4.5
--
--
--
--
0.4
Enable
2.4
--
--
Open
2.4
3.3
4.2
V EN = 0.2V (Source)
1
3
5
V EN = 3.3V (Sink)
---
3
--
8
0.6
2
--
--
-1.8
2.7
−1
−1
------
0.8
2.3
-1
1
VREG5 to BOOTx
--
20
--
UGATEx, High state
--
3
6
UGATEx, Low state
LGATEx, High State
---
1.5
2.2
4
5
LGATEx, Low State
LGATEx Rising
---
0.6
30
1.5
--
UGATEx Rising
--
40
--
Shutdown
EN Voltage
V EN
EN Current
IEN
ENC Threshold Voltage
(RT8223B)
VENC
TONSEL Setting Voltage
Input Leakage Current
Internal BOOT Switch
Internal Boost Charging
Switch On-Resistance
Shutdown
Enable
VOUT1/V OUT2 = 200kHz/250kHz
VOUT1/V OUT2 = 300kHz/375kHz
VOUT1/V OUT2 = 400kHz/500kHz
TONSEL, SKIPSEL = 0V or 5V
ENC = 0V or 5V (RT8223B)
V
V
V
V
μA
V
V
μA
Ω
Power MOSFET Drivers
UGATEx On-Resistance
LGATEx On-Resistance
Dead Time
Ω
ns
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in natural convection at TA = 25°C on a high effective thermal conductivity four-layer test board of
JEDEC 51-7 thermal measurement standard. The measurement case positions of θJC are on the lead of the SOP
package and the expose pad for the SOP(Exposed Pad) package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. PVIN + PVREG5
DS8223A/B-04 April 2011
www.richtek.com
11
RT8223A/B
Typical Operating Characteristics
VOUT1 Output Efficiency vs. Load Current
VOUT2 Output Efficiency vs. Load Current
100
100
90
90
DEM Mode
80
70
Efficiency (%)
Efficiency (%)
80
Ultrasonic Mode
60
50
PWM Mode
40
30
20
DEM Mode
70
60
Ultrasonic Mode
50
PWM Mode
40
30
20
VIN = 8V, TONSEL = GND, EN = VIN,
ENTRIP1 = 0.91V, ENTRIP2 = GND
10
0
0.001
0.01
0.1
1
VIN = 8V, TONSEL = GND, EN = VIN,
ENTRIP1 = GND, ENTRIP2 = 0.91V
10
0
0.001
10
0.01
Load Current (A)
VOUT1 Output Efficiency vs. Load Current
100
90
90
Ultrasonic Mode
Efficiency (%)
Efficiency (%)
80
DEM Mode
70
60
50
PWM Mode
40
30
20
0
0.001
DEM Mode
70
Ultrasonic Mode
60
50
PWM Mode
40
30
0.01
0.1
1
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = GND, ENTRIP2 = 0.91V,
10
0
0.001
10
0.01
Load Current (A)
100
90
90
Efficiency (%)
70
Ultrasonic Mode
60
PWM Mode
40
30
20
0
0.001
VIN = 20V, TONSEL = GND, EN = VIN,
ENTRIP1 = 0.91V, ENTRIP2 = GND
0.1
Load Current (A)
www.richtek.com
12
70
DEM Mode
60
Ultrasonic Mode
50
40
PWM Mode
30
20
0.01
10
80
DEM Mode
10
1
VOUT2 Output Efficiency vs. Load Current
100
50
0.1
Load Current (A)
VOUT1 Output Efficiency vs. Load Current
Efficiency (%)
10
20
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = 0.91V, ENTRIP2 = GND
10
80
1
VOUT2 Output Efficiency vs. Load Current
100
80
0.1
Load Current (A)
1
10
VIN = 20V
TONSEL = GND, EN = VIN,
ENTRIP1 = GND, ENTRIP2 = 0.91V
10
0
0.001
0.01
0.1
1
10
Load Current (A)
DS8223A/B-04 April 2011
RT8223A/B
VOUT1 Output Switching Frequency vs. Load Current
VOUT2 Output Switching Frequency vs. Load Current
225
300
VIN = 8V, TONSEL = GND, EN = VIN,
ENTRIP1 = 0.91V, ENTRIP2 = GND
275
Switching Frequency (kHz)
Switching Frequency (kHz)
250
200
PWM Mode
175
150
125
100
75
50
Ultrasonic Mode
25
0
0.001
250
PWM Mode
225
200
175
150
125
100
75
Ultrasonic Mode
50
25
DEM Mode
0.01
VIN = 8V, TONSEL = GND, EN = VIN,
ENTRIP1 = GND, ENTRIP2 = 0.91V
0.1
1
0
0.001
10
DEM Mode
0.01
Load Current (A)
300
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = 0.91V, ENTRIP2 = GND
275
200
PWM Mode
175
150
125
100
75
50
Ultrasonic Mode
25
0.01
0.1
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = GND, ENTRIP2 = 0.91V
250
PWM Mode
225
200
175
150
125
100
75
Ultrasonic Mode
50
25
DEM Mode
0
0.001
1
0
0.001
10
DEM Mode
0.01
Load Current (A)
300
VIN = 20V, TONSEL = GND, EN = VIN,
ENTRIP1 = 0.91V, ENTRIP2 = GND
275
200
175
PWM Mode
150
125
100
75
50
Ultrasonic Mode
25
0
0.001
0.1
Load Current (A)
DS8223A/B-04 April 2011
10
1
VIN = 20V, TONSEL = GND, EN = VIN,
ENTRIP1 = GND, ENTRIP2 = 0.91V
250
225
PWM Mode
200
175
150
125
100
75
50
Ultrasonic Mode
25
DEM Mode
0.01
1
VOUT2 Output Switching Frequency vs. Load Current
Switching Frequency (kHz)
Switching Frequency (kHz)
225
0.1
Load Current (A)
VOUT1 Output Switching Frequency vs. Load Current
250
10
VOUT2 Output Switching Frequency vs. Load Current
Switching Frequency (kHz)
Switching Frequency (kHz)
225
1
Load Current (A)
VOUT1 Output Switching Frequency vs. Load Current
250
0.1
10
0
0.001
DEM Mode
0.01
0.1
1
10
Load Current (A)
www.richtek.com
13
RT8223A/B
VOUT1 Output Voltage vs. Load Current
5.108
Output Voltage (V)
5.102
VOUT2 Output Voltage vs. Load Current
3.378
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = 0.91V, ENTRIP2 = GND
Ultrasonic Mode
5.096
5.090
DEM Mode
5.084
5.078
5.072
5.066
PWM Mode
5.060
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = GND, ENTRIP2 = 0.91V
3.372
Output Voltage (V)
5.114
3.366
Ultrasonic Mode
3.360
3.354
DEM Mode
3.348
3.342
PWM Mode
3.336
3.330
5.054
5.048
0.001
0.01
0.1
1
3.324
0.001
10
0.01
0.1
Load Current (A)
4.978
3.324
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = ENTRIP2 = GND
3.322
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = ENTRIP2 = GND
3.320
Output Voltage (V)
Output Voltage (V)
4.976
4.974
4.972
4.970
4.968
4.966
3.318
3.316
3.314
3.312
4.964
3.310
4.962
3.308
3.306
4.960
0
10
20
30
40
50
60
0
70
10
20
VREF vs. Output Current
2.0028
40
50
60
70
Battery Current vs. Input Voltage
100
VIN = 12V, TONSEL = GND, EN = VIN,
ENTRIP1 = ENTRIP2 = GND
Battery Current (mA)
2.0026
2.0024
V REF (V)
30
Output Current (mA)
Output Current (mA)
2.0030
10
VREG3 Output Voltage vs. Output Current
VREG5 Output Voltage vs. Output Current
4.980
1
Load Current (A)
2.0022
2.0020
2.0018
2.0016
2.0014
PWM Mode
10
Ultrasonic Mode
1
DEM Mode
No Load, TONSEL = GND, EN = VIN,
ENTRIP1 = ENTRIP2 = 0.91V
2.0012
2.0010
0.1
-10
0
10
20
30
Output Current (uA)
www.richtek.com
14
40
50
7
9
11
13
15
17
19
21
23
25
Input Voltage (V)
DS8223A/B-04 April 2011
RT8223A/B
Shutdown Input Current vs. Input Voltage
Standby Input Current vs. Input Voltage
22
No Load, EN = VIN, ENTRIP1 = ENTRIP2 = GND
Shutdown Input Current (uA)
Standby Input Current (uA)
252
250
248
246
244
242
No Load, EN = GND, ENTRIP1 = ENTRIP2 = GND
20
18
16
14
12
10
8
240
7
9
11
13
15
17
19
21
23
7
25
9
11
13
15
17
19
Input Voltage (V)
Input Voltage (V)
VREF vs. Temperature
Start Up
21
23
25
2.011
2.008
VREG5
(5V/Div)
VREG3
(5V/Div)
VREF (V)
2.005
2.002
1.999
REF
(5V/Div)
1.996
1.993
EN
(10V/Div)
VIN = 12V, ENTRIP1 = ENTRIP2 = GND,
EN = VIN, TONSEL = GND
No Load, VIN = 12V, TONSEL = GND,
EN = VIN, ENTRIP1 = ENTRIP2 = GND
1.990
-50
-25
0
25
50
75
100
Time (400μs/Div)
125
Temperature (°C)
VOUT1 Start Up
VOUT1 Start Up
No Load, VIN = 12V, TONSEL = GND, EN = VIN
VOUT1
(5V/Div)
VOUT1
(5V/Div)
Inductor
Current
(2A/Div)
Inductor
Current
(2A/Div)
ENTRIP1
(2V/Div)
PGOOD
(10V/Div)
Heavy Load, VIN = 12V, TONSEL = GND, EN = VIN
ENTRIP1
(2V/Div)
ENTRIP1 = ENTRIP2 = 0.91V
Time (400μs/Div)
DS8223A/B-04 April 2011
PGOOD
(10V/Div)
ENTRIP1 = NTRIP2 = 0.91V, IOUT1 = 4A
Time (400μs/Div)
www.richtek.com
15
RT8223A/B
VOUT2 Start Up
VOUT2 Start Up
Heavy Load, VIN = 12V, TONSEL = GND, EN = VIN
No Load, VIN = 12V, TONSEL = GND, EN = VIN
VOUT2
(5V/Div)
VOUT2
(5V/Div)
Inductor
Current
(2A/Div)
Inductor
Current
(2A/Div)
ENTRIP2
(2V/Div)
PGOOD
(10V/Div)
ENTRIP1 = ENTRIP2 = 0.91V
ENTRIP2
(2V/Div)
PGOOD
(10V/Div)
Time (400μs/Div)
Time (400μs/Div)
VOUT1 Delay Start
VOUT2 Delay Start
No Load, VIN = 12V, TONSEL = GND, EN = VIN
VOUT1
(5V/Div)
No Load, VIN = 12V, TONSEL = GND, EN = VIN
VOUT2
(5V/Div)
VOUT1
(5V/Div)
VOUT2
(5V/Div)
ENTRIP1
(1V/Div)
ENTRIP1
(1V/Div)
ENTRIP2
(1V/Div)
ENTRIP2
(1V/Div)
Time (400μs/Div)
VOUT1 PWM Mode Load Transient Response
Time (400μs/Div)
VOUT2 PWM Mode Load Transient Response
VIN = 12V, TONSEL = GND, EN = VIN,
SKIPSEL = GND, IOUT1 = 0A to 6A
VIN = 12V, TONSEL = GND, EN = VIN,
SKIPSEL = GND, IOUT2 = 0A to 6A
VOUT1_ac
(50mV/Div)
VOUT2_ac
(50mV/Div)
Inductor
Current
(5A/Div)
Inductor
Current
(5A/Div)
UGATE1
(20V/Div)
LGATE1
(10V/Div)
UGATE2
(20V/Div)
LGATE2
(10V/Div)
Time (20μs/Div)
www.richtek.com
16
ENTRIP1 = ENTRIP2 = 0.91V
Time (20μs/Div)
DS8223A/B-04 April 2011
RT8223A/B
OVP
Power Off from ENTRIP1
No Load, VIN = 12V, TONSEL = GND, EN = VIN
SKIPSEL = REF
No Load, VIN = 12V, TONSEL = GND, EN = VIN
SKIPSEL = GND
VOUT1
(5V/Div)
UGATE1
(20V/Div)
VOUT1
(5V/Div)
LGATE1
(5V/Div)
VOUT2
(2V/Div)
ENTRIP1
(1V/Div)
PGOOD
(5V/Div)
Time (40ms/Div)
Time (4ms/Div)
UVP
VIN = 12V, TONSEL = GND, EN = VIN
SKIPSEL = GND
VOUT1
(5V/Div)
Inductor
Current
(5A/Div)
UGATE1
(20V/Div)
LGATE1
(10V/Div)
Time (20μs/Div)
DS8223A/B-04 April 2011
www.richtek.com
17
RT8223A/B
Application Information
The RT8223A/B is a dual, Mach ResponseTM DRVTM dual
ramp valley mode synchronous buck controller. The
controller is designed for low voltage power supplies for
notebook computers. Richtek's Mach Response TM
technology is specifically designed for providing 100ns
“instant-on” response to load steps while maintaining a
relatively constant operating frequency and inductor
operating point over a wide range of input voltages. The
topology circumvents the poor load-transient timing
problems of fixed-frequency current mode PWMs while
avoiding the problems caused by widely varying switching
frequencies in conventional constant on-time and constant
off-time PWM schemes. The DRV TM mode PWM
modulator is specifically designed to have better noise
immunity for such a dual output application. The RT8223A/
B includes 5V (VREG5) and 3.3V (VREG3) linear
regulators. VREG5 linear regulator can step down the
battery voltage to supply both internal circuitry and gate
drivers. The synchronous-switch gate drivers are directly
powered from VREG5. When VOUT1 voltage is above
4.66V, an automatic circuit will switch the power of the
device from VREG5 linear regulator from VOUT1.
PWM Operation
The Mach ResponseTM DRVTM mode controller relies on
the output filter capacitor's effective series resistance
(ESR) to act as a current sense resistor, so the output
ripple voltage provides the PWM ramp signal. Refer to the
RT8223A/B's function block diagram, the synchronous
high-side MOSFET will be turned on at the beginning of
each cycle. After the internal one-shot timer expires, the
MOSFET will be turned off. The pulse width of this one
shot is determined by the converter's input voltage and
the output voltage to keep the frequency fairly constant
over the input voltage range. Another one shot sets a
minimum off-time (300ns typ.). The on-time one shot will
be triggered if the error comparator is high, the low side
switch current is below the current limit threshold, and
the minimum off-time one shot has timed out.
PWM Frequency and On-Time Control
The Mach ResponseTM control architecture runs with
pseudo-constant frequency by feed forwarding the input
www.richtek.com
18
and output voltage into the on-time one shot timer. The
high-side switch on-time is inversely proportional to the
input voltage as measured by the VIN, and proportional to
the output voltage. There are two benefits of a constant
switching frequency. The first is the frequency can be
selected to avoid noise sensitive regions such as the
455kHz IF band. The second is the inductor ripple-current
operating point remains relatively constant, resulting in
easy design methodology and predictable output voltage
ripple. The frequency for 3V SMPS is set at 1.25 times
higher than the frequency for 5V SMPS. This is done to
prevent audio-frequency “beating” between the two sides,
which switch asynchronously for each side. The
frequencies are set by TONSEL pin connection as Table1.
The on-time is given by :
On-Time = K x (VOUT / VIN)
where “K” is set by the TONSEL pin connection (Table
1). The on-time guaranteed in the Electrical Characteristics
tables are influenced by switching delays in the external
high-side power MOSFET. Two external factors that
influence switching-frequency accuracy are resistive drops
in the two conduction loops (including inductor and PC
board resistance) and the dead-time effect. These effects
are the largest contributors to the change of frequency
with changing load current. The dead time effect increases
the effective on-time, reducing the switching frequency
as one or both dead times. It occurs only in PWM mode
(SKIPSEL= REF) when the inductor current reverses at
light or negative load currents. With reversed inductor
current, the inductor's EMF causes PHASEx to go high
earlier than normal, extending the on-time by a period
equal to the low-to-high dead time. For loads above the
critical conduction point, the actual switching frequency
is :
f = (VOUT + VDROP1) / (tON x (VIN + VDROP1 -VDROP2) )
where VDROP1 is the sum of the parasitic voltage drops in
the inductor discharge path, including synchronous
rectifier, inductor, and PC board resistances; VDROP2 is
the sum of the resistances in the charging path; and tON
is the on-time calculated by the RT8223A/B.
DS8223A/B-04 April 2011
RT8223A/B
Table 1. TONSEL Connection and Switching
Frequency
SMPS 1
SMPS 1
SMPS 2
TON
K-Factor
Frequency
K-Factor
(us)
(kHz)
(us)
GND
5
200
4
REF
3.33
300
2.67
VREG5 or
2.5
400
2
VREG3
TON
GND
REF
VREG5 or
VREG3
SMPS 2
Frequency (kHz)
250
375
Approximate
K-Factor Error (%)
±10
±10
500
±10
Operation Mode Selection (SKIPSEL)
The RT8223A/B supports three operation modes : Diode
Emulation Mode, Ultrasonic Mode, and Forced CCM
Mode.
Diode-Emulation Mode (SKIPSEL = GND)
In Diode Emulation mode, The RT8223A/B automatically
reduces switching frequency at light load conditions to
maintain high efficiency. This reduction of frequency is
achieved smoothly and without increase of VOUT ripple or
load regulation. As the output current decreases from heavy
load condition, the inductor current is also reduced, and
eventually comes to the point that its valley touches zero
current, which is the boundary between continuous
conduction and discontinuous conduction modes. By
emulating the behavior of diodes, the low-side MOSFET
allows only partial of negative current when the inductor
free-wheeling current reach negative. As the load current
is further decreased, it takes longer and longer to discharge
the output capacitor to the level that requires the next
“ON” cycle. The on-time is kept the same as that in the
heavy-load condition. In reverse, when the output current
increases from light load to heavy load, the switching
frequency increases to the preset value as the inductor
current reaches the continuous conduction. The transition
load point to the light load operation can be calculated as
follows (Figure 1) :
ILOAD(SKIP)
(VIN − VOUT )
≈
× TON
2L
where Ton is the On-time.
DS8223A/B-04 April 2011
IL
Slope = (VIN -VOUT) / L
iL, peak
iLoad = iL, peak / 2
0
tON
t
Figure 1. Boundary condition of CCM/DCM
The switching waveforms may appear noisy and
asynchronous when light loading causes Diode-Emulation
operation, but this is a normal operating condition that
results in high light load efficiency. Trade offs in PFM
noise vs. light load efficiency are made by varying the
inductor value. Generally, low inductor values produce a
broader efficiency vs. load curve, while higher values result
in higher full load efficiency (assuming that the coil
resistance remains fixed) and less output voltage ripple.
Penalties for using higher inductor values include larger
physical size and degraded load transient response
(especially at low input-voltage levels).
Ultrasonic Mode (SKIPSEL = VREG5 or VREG3)
Connecting SKIPSEL to VREG5 or VREG3 activates a
unique Diode-Emulation mode with a minimum switching
frequency of 25kHz. This ultrasonic mode eliminates
audio-frequency modulation that would otherwise be
present when a lightly loaded controller automatically
skips pulses. In ultrasonic mode, the low-side switch gate
driver signal is OR with an internal oscillator (>25kHz).
Once the internal oscillator is triggered, the ultrasonic
controller pulls LGATEx high, turning on the low side
MOSFET to induce a negative inductor current. After the
output voltage across the REF, the controller turns off the
low-side MOSFET (LGATEx pulled low) and triggers a
constant on-time (UGATEx driven high). When the ontime has expired, the controller re-enables the low-side
MOSFET until the controller detects that the inductor
current dropped below the zero-crossing threshold.
Forced CCM Mode (SKIPSEL = REF)
The low-noise, forced CCM mode (SKIPSEL = REF)
disables the zero-crossing comparator, which controls the
low side switch on-time. This causes the low side gate
driver waveform to become the complement of the high
www.richtek.com
19
RT8223A/B
side gate-driver waveform. This in turn causes the inductor
current to reverse at light loads as the PWM loop to
maintain a duty ratio of VOUT/VIN. The benefit of forcedCCM mode is to keep the switching frequency fairly
constant, but it comes at a cost : The no load battery
current can be 10mA to 40mA, depending on the external
MOSFETs.
IL
IL, peak
ILoad
ILIM
t
0
Figure 2. “valley” Current-Limit
Reference and linear Regulators (REF, VREGx)
The 2V reference (REF) is accurate within ±1% over
temperature, making REF useful as a precision system
reference. Bypass REF to GND with a 0.22μF (min)
capacitor. REF can supply up to 50uA for external loads.
Loading REF reduces the VOUTx output voltage slightly
because of the reference load regulation error.
VREG5 regulator supplies total of 70mA for internal and
external loads, including MOSFET gate driver and PWM
controller. VREG3 regulator supplies up to 70mA for
external loads. Bypass VREG5 and VREG3 with a 4.7μF
(min) capacitor; use an additional 1μF per 5mA of internal
and external load.
When the 5V main output voltage is above the VREG5
switchover threshold, an internal 1.5Ω N-MOSFET switch
connects VOUT1 to VREG5 while simultaneously shutting
down the VREG5 linear regulator. Similarly, when the 3.3V
main output voltage is above the VREG3 switchover
threshold, an internal 1.5Ω N-MOSFET switch connects
VOUT2 to VREG3 while simultaneously shutting down
the VREG3 linear regulator. It can decrease the power
dissipation from the same battery, because the converted
efficiency of SMPS is better than the converted efficiency
of linear regulator.
Current Limit Setting (ENTRIPx)
The RT8223A/B has cycle-by-cycle current limiting control.
The current limit circuit employs a unique “valley” current
sensing algorithm. If the magnitude of the current sense
signal at PHASEx is above the current limit threshold,
the PWM is not allowed to initiate a new cycle (Figure 2).
The actual peak current is greater than the current limit
threshold by an amount equal to the inductor ripple current.
Therefore, the exact current limit characteristic and
maximum load capability are a function of the sense
resistance, inductor value, battery and output voltage.
www.richtek.com
20
The RT8223A/B uses the on resistance of the synchronous
rectifier as the current sense element. Use the worse case
maximum value for RDS(ON) from the MOSFET datasheet,
and add a margin of 0.5%/°C for the rise in RDS(ON) with
temperature.
The RILIM resistor between the ENTRIPx pin and GND sets
the over current threshold. The resistor RILIM is connected
to a 10μA current source from ENTRIPx. When the voltage
drop across the sense resistor or low side MOSFET
equals 1/10 the voltage across the RILIM resistor, positive
current limit will be activated. The high side MOSFET will
not be turned on until the voltage drop across the MOSFET
falls below 1/10 the voltage across the RILIM resistor.
Choose a current limit resistor by following equation :
VILIM = (RILIM x 10μA) / 10 = IILIM x RDS(ON)
RILIM = (IILIM x RDS(ON)) x 10 / 10μA
Carefully observe the PC board layout guidelines to ensure
that noise and DC errors do not corrupt the current sense
signal at PHASEx and GND. Mount or place the IC close
to the low side MOSFET.
MOSFET Gate Driver (UGATEx, LGATEx)
The high side driver is designed to drive high current, low
RDS(ON) N-MOSFET(s). When configured as a floating driver,
5-V bias voltage is delivered from VREG5 supply. The
average drive current is also calculated by the gate charge
at VGS = 5 V times switching frequency. The instantaneous
drive current is supplied by the flying capacitor between
BOOTx and PHASEx pins. A dead time to prevent shoot
through is internally generated between high side
MOSFET off to low side MOSFET on, and low side
MOSFET off to high side MOSFET on.
The low side driver is designed to drive high current low
RDS(ON) N-MOSFET(s). The internal pull down transistor
DS8223A/B-04 April 2011
RT8223A/B
that drives LGATEx low is robust, with a 0.6Ω typical onresistance. A 5V bias voltage is delivered from VREG5
supply. The instantaneous drive current is supplied by an
input capacitor connected between VREG5 and GND.
For high current applications, some combinations of high
and low side MOSFETs might be encountered that will
cause excessive gate-drain coupling, which can lead to
efficiency-killing, EMI-producing shoot-through currents.
This is often remedied by adding a resistor in series with
BOOTx, which increases the turn-on time of the high side
MOSFET without degrading the turn-off time (Figure 3).
V IN
BOOTx
10
UGATEx
Output Over Voltage Protection (OVP)
The output voltage can be continuously monitored for over
voltage. When over voltage protection is enabled, if the
output voltage exceeds 11% of its set voltage threshold,
the over voltage protection will be triggered and the LGATEx
low-side gate drivers will be forced high. This activates
the low side MOSFET switch, which rapidly discharges
the output capacitor and pulls the input voltage downward.
RT8223A/B will be latched once OVP is triggered and
can only be released by EN power-on reset. There is a
10μs delay built into the over voltage protection circuit to
prevent false transition.
Note that LGATEx latching high causes the output voltage
to dip slightly negative when energy has been previously
stored in the LC tank circuit. For loads that cannot tolerate
a negative voltage, place a power Schottky diode across
the output to act as a reverse polarity clamp.
PHASEx
Figure 3. Reducing the UGATEx Rise Time
Soft-Start
A build-in soft-start is used to prevent surge current from
power supply input after ENTRIPx is enabled. The typical
soft-start duration is 2ms period. Furthermore, the
maximum allowed current limit is segmented in 5 steps:
20%, 40%, 60%, 80% and 100% during the 2ms period.
UVLO Protection
The RT8223A/B has VREG5 under voltage lock out
protection (UVLO). When the VREG5 voltage is lower than
4.2V (typ.) and the VREG3 voltage is lower than 2.5V
(typ.), both switch power supplies will be shut off. This is
a non-latch protection.
Power Good Output (PGOOD)
The PGOOD is an open-drain type output and requires a
pull-up resistor. PGOOD is actively held low in soft-start,
standby, and shutdown. It will be released when both
output voltage are above 92.5% of nominal regulation point.
The PGOOD goes low if either output turns off or is 10%
below its nominal regulator point.
DS8223A/B-04 April 2011
If the over voltage condition is caused by a short in highside switch, turning the low side MOSFET on 100%
creates an electrical short between the battery and GND,
blowing the fuse and disconnecting the battery from the
output.
Output Under voltage Protection (UVP)
The output voltage can be continuously monitored for under
voltage protection. When under voltage protection is
enabled, if the output is less than 70% of its set voltage
threshold, under voltage protection will be triggered, then
both UGATEx and LGATEx gate drivers are forced low
while entering soft-discharge mode. During soft-start, the
UVP will be blanked around 3ms.
Thermal Protection
The RT8223A/B provides thermal shutdown to prevent the
overheat damage. Thermal shutdown occurs when the die
temperature exceeds +150°C. All internal circuitry shuts
down during thermal shutdown. The RT8223A/B triggers
thermal shutdown if VREGx is not supplied from VOUTx,
while input voltage on VIN and drawing current from VREGx
are too high. Even if VREGx is supplied from VOUTx,
overloading the VREGx causes large power dissipation
on automatic switches, which may result in thermal
shutdown.
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21
RT8223A/B
Discharge Mode (Soft Discharge)
When ENTRIPx is low and a transition to standby,
shutdown mode occurs, or the output under voltage fault
latch is set, the outputs discharge mode will be triggered.
During discharge mode, there is one path to discharge
the outputs capacitor residual charge. That is output
capacitor discharge to GND through an internal MOS
switch.
Shutdown Mode
VREG5 connects to VOUT1 through an internal switch
only when VOUT1 is above the VREG5 automatic switch
threshold (4.66V). VREG3 connects to VOUT2 through
an internal switch only when VOUT2 is above the VREG3
automatic switch threshold (3V). This is the most effective
way when the fixed output voltages are used. Once VREGx
is supplied from VOUTx, the internal linear regulator turns
off. This reduces internal power dissipation and improves
efficiency when the VREGx is powered with a high input
voltage.
The RT8223A/B SMPS1, SMPS2, VREG3 and VREG5
have independent enabling control. Drive EN, ENTRIP1,
ENTRIP2 and ENC below the precise input falling edge
trip level to place the RT8223A/B in its low power shutdown
state. The RT8223A/B consumes only 20μA of input
current while in shutdown.
VIN
PHASEx
LGATEx
VOUTx
FBx
PGND
Power-Up Sequencing and On/Off Controls
(ENTRIPx, ENC)
ENTRIP1 and ENTRIP2 control SMPS power-up
sequencing. When the RT8223A/B applies in the single
channel mode, ENTRIP1 or ENTRIP2 enables the
respective outputs when ENTRIPx voltage rises above
0.4V. Furthermore, the RT8223A/B applies in the dual
channel mode. ENC enables the outputs when ENC
voltage rises above 2V.
If both of ENTRIP1 and ENTRIP2 become higher than the
enable threshold voltage at a different time (without 60μs),
one can force the latter one output starts after the former
one regulates.
Output Voltage Setting (FBx)
Connect FBx directly to GND or VREG5 to enable the
fixed, SMPS output voltages (3.3V and 5V). Connect a
resistor voltage divider at the FBx between the VOUTx
and GND to adjust the respective output voltage between
2V and 5.5V (Figure 4). Choose R2 to be approximately
10kΩ, and solve for R1 using the equation :
⎡
⎤
VOUTx = VFBx × ⎢1 + ⎛⎜ R1 ⎞⎟ ⎥
⎣ ⎝ R2 ⎠ ⎦
where VFBx is 2V (typ.).
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22
VOUTx
UGATEx
R1
R2
GND
Figure 4. Setting VOUTx with a Resistor-Divider
Output Inductor Selection
The switching frequency (on-time) and operating point (%
ripple or LIR) determine the inductor value as shown as
follows :
L=
TON × (VIN − VOUTx )
LIR × ILOAD(MAX)
where LIR is the ratio of the peak to peak ripple current to
the average inductor current.
Find a low loss inductor having the lowest possible DC
resistance that fits in the allotted dimensions. Ferrite cores
are often the best choice, although powdered iron is
inexpensive and can work well at 200kHz. The core must
be large enough not to saturate at the peak inductor current
(IPEAK) :
IPEAK = ILOAD(MAX) + [(LIR / 2) x ILOAD(MAX)]
This inductor ripple current also impacts transient-response
performance, especially at low VIN − VOUTx differences.
Low inductor values allow the inductor current to slew
faster, replenishing charge removed from the output filter
capacitors by a sudden load step. The peak amplitude of
the output transient VSAG is also a function of the output
transient. The VSAG also features a function of the
DS8223A/B-04 April 2011
RT8223A/B
maximum duty factor, which can be calculated from the
on-time and minimum off-time :
VSAG
V
(ΔILOAD )2 × L × ⎛⎜ K OUTx + TOFF(MIN) ⎞⎟
VIN
⎝
⎠
=
⎡ ⎛ VIN − VOUTx ⎞
⎤
2 × COUT × VOUTx × ⎢K ⎜
⎟ − TOFF(MIN) ⎥
V
IN
⎠
⎣ ⎝
⎦
Where minimum off-time (TOFF(MIN)) = 300ns (typ.) and K
is from Table 1.
Output Capacitor Selection
The output filter capacitor must have low enough ESR to
meet output ripple and load-transient requirements, yet
have high enough ESR to satisfy stability requirements.
Also, the capacitance value must be high enough to
absorb the inductor energy going from a full load to no
load condition without tripping the OVP circuit.
For CPU core voltage converters and other applications
where the output is subject to violent load transients, the
output capacitor's size depends on how much ESR is
needed to prevent the output from dipping too low under a
load transient. Ignoring the sag due to finite capacitance :
ESR ≤
VP-P
ILOAD(MAX)
In non-CPU applications, the output capacitor's size
depends on how much ESR is needed to maintain an
acceptable level of output voltage ripple :
VP-P
ESR ≤
LIR × ILOAD(MAX)
where VP-P is the peak to peak output voltage ripple.
Organic semiconductor capacitor(s) or specialty polymer
capacitor(s) are recommended.
For low input to output voltage differentials (VIN / VOUTx
< 2), additional output capacitance is required to maintain
stability and good efficiency in ultrasonic mode.
The amount of overshoot due to stored inductor energy
can be calculated as :
VSOAR ≤
(IPEAK )2 × L
2 × COUT × VOUTx
where IPEAK is the peak inductor current.
DS8223A/B-04 April 2011
Output Capacitor Stability
Stability is determined by the value of the ESR zero relative
to the switching frequency. The point of instability is given
by the following equation :
fESR =
f
1
≤ SW
2 × π × ESR × COUT
4
Do not put high-value ceramic capacitors directly across
the outputs without taking precautions to ensure stability.
Large ceramic capacitors can have a high- ESR zero
frequency and cause erratic, unstable operation. However,
it is easy to add enough series resistance by placing the
capacitors a couple of inches downstream from the
inductor and connecting VOUTx or the FBx divider close
to the inductor.
Unstable operation manifests itself in two related and
distinctly different ways: double pulsing and feedback loop
instability.
Double pulsing occurs due to noise on the output or
because the ESR is so low that there is not enough voltage
ramp in the output voltage signal. This “fools” the error
comparator into triggering a new cycle immediately after
the 300ns minimum off-time period has expired. Double
pulsing is more annoying than harmful, resulting in nothing
worse than increased output ripple. However, it may
indicate the possible presence of loop instability, which
is caused by insufficient ESR.
Loop instability can result in oscillations at the output
after line or load perturbations that can trip the overvoltage
protection latch or cause the output voltage to fall below
the tolerance limit.
The easiest method for checking stability is to apply a
very fast zero to max load transient and carefully observe
the output voltage ripple envelope for overshoot and ringing.
It helps to simultaneously monitor the inductor current
with an AC current probe. Do not allow more than one
cycle of ringing after the initial step response under or
overshoot.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum operation junction temperature. The maximum
power dissipation depends on the thermal resistance of
IC package, PCB layout, the rate of surroundings airflow
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23
RT8223A/B
and temperature difference between junction to ambient.
The maximum power dissipation can be calculated by
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
Where T J(MAX) is the maximum operation junction
temperature, TA is the ambient temperature and the θJA is
the junction to ambient thermal resistance.
For recommended operating conditions specification of
RT8223A/B, the maximum junction temperature is 125°C.
The junction to ambient thermal resistance θJA is layout
dependent. For WQFN-24L 4x4 package, the thermal
resistance θJA is 52°C/W on the standard JEDEC 51-7
four layers thermal test board. The maximum power
dissipation at TA = 25°C can be calculated by following
formula :
PD(MAX) = (125°C − 25°C) / (52°C/W) = 1.923W for
WQFN-24L 4x4 package
The maximum power dissipation depends on operating
ambient temperature for fixed T J(MAX) and thermal
resistance θJA. For RT8223A/B package, the Figure 5 of
derating curves allows the designer to see the effect of
rising ambient temperature on the maximum power
dissipation allowed.
Maximum Power Dissipation (W)
2.0
Four Layers PCB
1.8
1.6
1.4
WQFN-24L 4x4
1.2
Layout Considerations
Layout is very important in high frequency switching
converter design. If the IC is designed improperly, the PCB
could radiate excessive noise and contribute to the
converter instability. Certain points must be considered
before starting a layout using the RT8223A/B.
`
Place the filter capacitor close to the IC, within 12 mm
(0.5 inch) if possible.
`
Keep current limit setting network as close as possible
to the IC. Routing of the network should avoid coupling
to high voltage switching node.
`
Connections from the drivers to the respective gate of
the high side or the low side MOSFET should be as
short as possible to reduce stray inductance. Use 0.65mm (25 mils) or wider trace.
`
All sensitive analog traces and components such as
VOUTx, FBx, GND, ENTRIPx, PGOOD, and TONSEL
should be placed away from high voltage switching
nodes such as PHASEx, LGATEx, UGATEx, or BOOTx
nodes to avoid coupling. Use internal layer(s) as ground
plane(s) and shield the feedback trace from power traces
and components.
`
Gather ground terminal of VIN capacitor(s), VOUTx
capacitor(s), and source of low side MOSFETs as close
as possible. PCB trace defined as PHASEx node, which
connects to source of high side MOSFET, drain of low
side MOSFET and high voltage side of the inductor,
should be as short and wide as possible.
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 5. Derating Curve for RT8223A/B Package
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24
DS8223A/B-04 April 2011
RT8223A/B
Table 2. Operation Mode Truth Table
Mode
Test Condition
Comment
Transitions to discharge mode after a VIN POR and after REF
becomes valid. VREG5, VREG3, and REF remain active.
Power-UP VREGx < UVLO threshold
RUN
Over
Voltage
Protection
Under
Voltage
Protection
EN = high, VOUT1 or VOUT2
enabled
Normal Operation.
Either output > 111% of the nominal
level.
LGATEx is forced high. VREG3, VREG5 active. Exited by VIN
POR or by toggling EN, ENTRIPx
Either output < 70% of the nominal
level after 3ms time-out expires and
output is enabled
Either SMPS output is still high in
Discharge either standby mode or shutdown
mode
ENC < startup threshold,
Standby
EN = high.
Shutdown EN = low
Thermal
TJ > +150°C
Shutdown
Both UGATEx and LGAT Ex are forced low and enter discharge
mode. VREG3, VREG5 active. Exited by VIN POR or by
toggling EN, ENTRIPx, ENC
During discharge mode, there is one path to discharge the
outputs capacitor residual charge. That is output capacitor
discharge to GND through an internal switch.
VREG3, VREG5 active.
All circuitry off.
All circuitry off. Exit by VIN POR or by toggling EN, ENTRIPx,
ENC
Table 3. Power Up Sequencing
EN
(V)
ENC
(V)
ENTRIP1
(V)
ENTRIP2
(V)
Low
Low
X
X
“>1V” =>
High
Low
X
X
“>1V” => “>2V”
High
=> High
Low
Low
“>1V” => “>2V”
High
=> High
Low
High
“>1V” => “>2V”
High
=> High
High
(after ENTRIP2 is
high without 60μs)
High
“>1V” => “>2V”
High
=> High
High
Low
“>1V” => “>2V”
High
=> High
High
High (after
ENTRIP1 is high
without 60μs)
“>1V” => “>2V”
High
=> High
High
High
DS8223A/B-04 April 2011
VREG5
VREG3
SMPS1
SMPS2
Off
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
Off
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
On
(after REF
powers up)
Off
Off
Off
Off
Off
Off
Off
On
On
(after
SMPS2 on)
On
On
Off
ON
On
(after
SMPS1 on)
On
On
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25
RT8223A/B
Outline Dimension
D2
D
SEE DETAIL A
L
1
E
E2
e
b
1
1
2
2
DETAIL A
Pin #1 ID and Tie Bar Mark Options
A
A3
A1
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.180
0.300
0.007
0.012
D
3.950
4.050
0.156
0.159
D2
2.300
2.750
0.091
0.108
E
3.950
4.050
0.156
0.159
E2
2.300
2.750
0.091
0.108
e
L
0.500
0.350
0.020
0.450
0.014
0.018
W-Type 24L QFN 4x4 Package
Richtek Technology Corporation
Richtek Technology Corporation
Headquarter
Taipei Office (Marketing)
5F, No. 20, Taiyuen Street, Chupei City
5F, No. 95, Minchiuan Road, Hsintien City
Hsinchu, Taiwan, R.O.C.
Taipei County, Taiwan, R.O.C.
Tel: (8863)5526789 Fax: (8863)5526611
Tel: (8862)86672399 Fax: (8862)86672377
Email: [email protected]
Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit
design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be
guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.
www.richtek.com
26
DS8223A/B-04 April 2011