3SK263 Ordering number : EN4423C SANYO Semiconductors DATA SHEET 3SK263 N-Channel Silicon MOSFET (Dual Gate) FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features • • • Enhancement type Small noise figure Small cross modulation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Conditions Ratings Unit VDS VG1S 15 V ±8 V VG2S ID ±8 V 30 mA mW PD Tch 200 Channel Temperature 125 °C Storage Temperature Tstg --55 to +125 °C Package Dimensions Product & Package Information unit : mm (typ) 7014A-006 3SK263-5-TG-E 2.9 0.5 0.4 Packing Type: TG 3 Marking 0.5 0.05 1.1 0.3 0.95 0.85 0.6 RJ LOT No. 2 RANK 1 LOT No. 2.5 1.5 4 0.1 • Package : CP4 • JEITA, JEDEC : SC-61, SC-82AB, SOT-143, SOT-343 • Minimum Packing Quantity : 3,000 pcs./reel TG 1 : Drain 2 : Source 3 : Gate1 4 : Gate2 SANYO : CP4 Electrical Connection 1 3 4 2 http://www.sanyosemi.com/en/network/ 90512 TKIM/82599TH (KT)/20696YK/63094MT (KOTO) AX-9847 No.4423-1/6 3SK263 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions VDS VG1S(off) Gate1-to-Source Cutoff Voltage Gate2-to-Source Cutoff Voltage VG1S=0V, VG2S=0V, ID=100μA VDS=6V, VG2S=4V, ID=100μA VDS=6V, VG1S=3V, ID=100μA VG2S(off) IG1SS Gate1-to-Source Leakage Current Gate2-to-Source Leakage Current typ max 15 V 0.7 1.3 0.1 0.9 1.6 V ±50 nA VG2S=±6V, VG1S=VDS=0V Forward Transfer Admittance Input Capacitance Ciss Reverse Transfer Capacitance Crss Power Gain PG VDS=6V, ID=10mA, VG2S=4V, f=200MHz Noise Figure NF VDS=6V, ID=10mA, VG2S=4V, f=200MHz VDS=6V, VG1S=1.5V, VG2S=4V Unit 0 VG1S=±6V, VG2S=VDS=0V IG2SS IDSX | yfs | Zero-Gate Voltage Drain Current Ratings min 2.5* VDS=6V, ID=10mA, VG2S=4V, f=1kHz ±50 nA 24* mA 14 mS 2.7 VDS=6V, f=1MHz, VG1S=0V, VG2S=4V 0.015 18 pF 0.03 21 1.1 V pF dB 2.2 dB * : The 3SK263 is classified by IDSX as follows : (unit : mA) Rank IDSX 4 2.5 to 6.0 5 5.0 to 12.0 6 10.0 to 24.0 PG, NF Specified Test Circult f=200MHz ~20pF 1000pF IN 50Ω 23T 4 21T 2 ~20pF ~20pF 47pF 12Ω VG1S OUT 50Ω 11T 2 1000pF 1000pF 15kΩ VDS VG2S L : 1mmØ enamel wire 10mmØ Ordering Information Device 3SK263-5-TG-E Package Shipping memo CP4 3,000pcs./reel Pb Free No.4423-2/6 3SK263 ID -- VDS 2.0V 1.2V VG1S=0.6V 0 0 2 4 6 8 10 V S= 2.5 2.0V V G1 1.75V 4 5.5V 5.0V 4.5V .0V 15 =6 2S VG 10 5 1.5 V 0 0.5 1.0 1.5 Input Capacitance, Ciss -- pF 20 5.5V 5.0V 15 4.5V 5V 3. 4.0 V 3.0 10 V 2.5 V 2.0 Ciss -- VG2S 10 15 20 VDS=6V VG1S : VG2S=4V ID=10mA f=1MHz Drain Current, ID -- mA VDS=6V VG1S : VG2S=4V ID=10mA f=200MHz 20 3 NF 0 1 1 2 3 4 --1 0 5 Gate2-to-Source Voltage, VG2S -- V 0 6 ITR02880 1 2 3 PD -- Ta 240 PG 2 0 2 Gate2-to-Source Voltage, VG2S -- V 4 10 --10 3 ITR02878 PG, NF -- VG2S 30 5 1.0 25 Allowable Power Dissipation, PD -- mW 5 Noise Figure, NF -- dB V 1.5 0 2.5 ITR02877 V 5 2.0 Gate1-to-Source Voltage, VG1S -- V ITR02876 7 =6.0V VG2S 4 3.5 .0V V 1.0V 0 5 | yfs | -- ID 1.0V Forward Transfer Admittance, | yfs | -- mS 20 VDS=6V f=1kHz 0 Power Gain, PG -- dB VDS=6V f=1kHz V 3 2.5 ITR02875 0V 0.75V 25 | yfs | -- VG1S 3. 1.0V 2 2.0 0V 1.25V 5 Gate2-to-Source Voltage, VG2S -- V 1.5 2.5 1.5V 10 1 1.0 2. Forward Transfer Admittance, | yfs | -- mS V 0 0.5 Gate1-to-Source Voltage, VG1S -- V 2.25 0 0 25 20 1.0V 0.5V 0 VDS=6V 15 2.0V 1.5V ITR02874 ID -- VG2S 25 10 0.8V Drain-to-Source Voltage, VDS -- V 2.5V 5 1.0V V .0V 1.4V 3.0 S =6 1.6V 15 V G2 1.8V 8 3.5V 4.0V 4.5V 5.0V 5.5V 20 12 4 Drain Current, ID -- mA VDS=6V 2.2V 2.4V Drain Current, ID -- mA 16 ID -- VG1S 25 VG2S=4.0V Drain Current, ID -- mA 20 4 ITR02879 200 160 120 80 40 0 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 ITR02881 No.4423-3/6 3SK263 Embossed Taping Specification 3SK263-5-TG-E No.4423-4/6 3SK263 Outline Drawing 3SK263-5-TG-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.9 1.2 1.0 0.8 1.8 No.4423-5/6 3SK263 Note on usage : Since the 3SK263 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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