MCH6341 Ordering number : ENA1272A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6341 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --5 A --20 A When mounted on ceramic substrate (1200mm2×0.8mm) Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 0.15 4 Packing Type : TL 2 3 0.65 YQ LOT No. 1 Marking LOT No. 0.25 MCH6341-TL-E MCH6341-TL-H 0 t o 0.02 2.1 1.6 0.25 Package Dimensions TL 0.3 0.07 0.85 Electrical Connection 1 6 2 5 3 4 1, 2, 5, 6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 3 SANYO : MCPH6 4 http://semicon.sanyo.com/en/network 62012 TKIM/73008PE TIIM TC-00001516 No. A1272-1/7 MCH6341 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 VDS=--10V, ID=--1mA VDS=--10V, ID=--3A --1.2 2.8 ID=--3A, VGS=--10V ID=--1.5A, VGS=--4.5V ID=--1.5A, VGS=--4V typ Unit max V --1 μA ±10 μA --2.6 4.8 V S 45 59 mΩ 71 100 mΩ 82 115 mΩ 430 pF 105 pF Crss 75 pF Turn-ON Delay Time td(on) 7.5 ns Rise Time tr td(off) 26 ns 45 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--15V, VGS=--10V, ID=--5A IS=--5A, VGS=0V 35 ns 10 nC 2.0 nC 2.5 nC --0.87 --1.5 V Switching Time Test Circuit VDD= --15V VIN 0V --10V ID= --3A RL=5Ω VIN D VOUT PW=10μs D.C.≤1% G MCH6341 P.G 50Ω S Ordering Information Package Shipping memo MCH6341-TL-E Device MCPH6 3,000pcs./reel Pb Free MCH6341-TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free No. A1272-2/7 MCH6341 ID -- VDS 5V --3.0 --3.0V --2.5 --2.0 --1.5 --1.0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 120 --3.0A 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 1.0 °C 75 °C 25 7 5 3 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 80 60 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT13382 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 --0.2 5 7 --10 IT13383 Drain Current, ID -- A --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 2 --1.2 IT13384 Ciss, Coss, Crss -- VDS 1000 VDD= --15V VGS= --10V f=1MHz 7 5 7 td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --4.0 IT13380 3 2 2 100 --3.5 .5A = --1 I D , .0V = --4 .5A = --1 VGS I D , .5V = --4 0A VGS = --3. V, I D 0 1 -= VGS 100 --10 7 5 C 5° -2 =Ta --3.0 Ambient Temperature, Ta -- °C 5 2 --2.5 120 0 --60 --16 VDS= --10V 3 --2.0 140 IT13381 | yfs | -- ID --1.5 RDS(on) -- Ta 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 ID= --1.5A --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 100 --0.5 IT13379 RDS(on) -- VGS 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --1.0 --25° C --0.1 Ta=7 5°C 25°C 0 7 --2 0 0 10 --3 --1 VGS= --2.5V --0.5 --4 Ta= 7 --3.5 5°C Drain Current, ID -- A --5 25° --2 C 5°C 0V VDS= --10V --16.0 --4.0 ID -- VGS --6 . --3 --4 . V --10.0V --4.5 Drain Current, ID -- A --6.0 V --4. 5V --5.0 tf 3 2 tr 10 td(on) 7 Ciss 3 2 Coss Crss 100 7 5 5 3 2 --0.1 3 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT13385 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT13386 No. A1272-3/7 MCH6341 VGS -- Qg --10 3 2 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 3 2 3 2 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT13387 PD -- Ta 2.0 PW≤10μs 10 0μ 1m s s 10 10 ms 0m s ID= --5A DC op er --1.0 7 5 --1 1 IDP= --20A 3 2 --2 0 Allowable Power Dissipation, PD -- W --10 7 5 --0.1 7 5 0 ASO 5 VDS= --15V ID= --5A ati on Operation in this area is limited by RDS(on). (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13895 When mounted on ceramic substrate (1200mm2×0.8mm) 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13896 No. A1272-4/7 MCH6341 Taping Specification MCH6341-TL-E, MCH6341-TL-H No. A1272-5/7 MCH6341 Outline Drawing MCH6341-TL-E, MCH6341-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1272-6/7 MCH6341 Note on usage : Since the MCH6341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.A1272-7/7