EMH1307 Ordering number : ENA1715A SANYO Semiconductors DATA SHEET EMH1307 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1 : 20mΩ(typ.) 1.8V drive Protection diode in • • Input Capacitance Ciss=1100pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V ±10 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7045-001 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 Taping Type : TL A Marking 2.1 JG TL 1 A --26 EMH1307-TL-H 5 1.7 8 --6.5 Lot No. 0.2 4 0.5 0.05 0.75 2.0 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7 EMH1307 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --20 V --0.4 --1 μA ±10 μA --1.3 8.2 V S 20 26 mΩ 31 44 mΩ 49 78 mΩ 1100 pF 210 pF Crss 160 pF Turn-ON Delay Time td(on) 12.8 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 120 ns Fall Time tf 88 ns Total Gate Charge Qg 13 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--6.5A IS=--6.5A, VGS=0V 1.9 nC 3.7 nC --0.8 --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --3A RL=3.33Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω EMH1307 S Ordering Information Device EMH1307-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1715-2/7 EMH1307 ID -- VDS --8 --4 --3 VGS= --1.5V --2 --7 --6 --5 --4 --3 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0A --3.0A 50 40 30 20 10 0 0 --2 --4 --6 --8 --10 Gate-to-Source Voltage, VGS -- V 3 C C 5° --2 = Ta °C 75 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 5 50 5 7 30 20 --1.8 --2.0 --1.6 IT15993 --0.5A 10 --40 --20 0 20 40 60 80 100 120 140 160 IT15995 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 3 --1.2 IT15997 f=1MHz 2 Ciss 2 Ciss, Coss, Crss -- pF 3 td(off) 100 tf 7 5 3 tr 2 3 5 7 --0.1 2 3 7 5 3 Coss 2 100 10 2 1000 Crss td(on) 7 --0.01 --1.4 0A = --1. 5V, I D . 2 -= VGS --3.0A ,I = --4.5V D = S VG 40 --0.01 7 5 3 2 --0.001 VDD= --10V VGS= --4.5V 7 Switching Time, SW Time -- ns 3 --1.2 = 8V, I D = --1. VGS IT15996 SW Time -- ID 1000 60 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 25° 5 --1.0 Ambient Temperature, Ta -- °C 10 7 --0.8 70 0 --60 --12 VDS= --10V 2 --0.6 RDS(on) -- Ta IT15994 | yfs | -- ID 3 --0.4 80 ID= --0.5A 60 --0.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 70 0 IT15992 RDS(on) -- VGS 80 0 --1.0 5°C 25° C --25° C 0 25 ° --1 Ta= 7 0 C --2 --1 --2 5°C --1.6V Ta= 75° C --5 VDS= --10V --9 Drain Current, ID -- A Drain Current, ID -- A --6 ID -- VGS --10 Ta=25°C --1.8 V --8.0V --6.0V --4.5V --2.5 V --7 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT15998 7 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT15999 No. A1715-3/7 EMH1307 VGS -- Qg --4.0 3 2 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 8 6 10 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 ASO 5 VDS= --10V ID= --6.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 12 14 IT15600 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IDP= --26A (PW≤10μs) 100 1m s ID= --6.5A μs 10m DC Operation in this area is limited by RDS(on). s 100 ope rat ms ion (Ta =2 5°C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT15515 When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15516 No. A1715-4/7 EMH1307 Embossed Taping Specification EMH1307-TL-H No. A1715-5/7 EMH1307 Outline Drawing EMH1307-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1715-6/7 EMH1307 Note on usage : Since the EMH1307 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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