MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS(on)1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --12 V ±5 V --3.5 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch Operating Temperature Topr --5 to +150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3383-TL-H 0.15 0.25 2.0 Packing Type : TL 1.6 150 °C QQ TL 0.25 1 0.65 2 Electrical Connection 0.3 3 0.07 0.85 2.1 W LOT No. 0 t o 0.02 A 1.0 Marking LOT No. 3 --14 1 : Gate 2 : Source 3 : Drain 1 SANYO : MCPH3 2 http://semicon.sanyo.com/en/network 53012TKIM/62211PE TKIM TC-00002604 No.9000-1/7 MCH3383 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V IGSS VGS(off) | yfs | VGS=±4V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.5A RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--2.5V ID=--0.7A, VGS=--1.8V ID=--0.3A, VGS=--1.2V RDS(on)3 RDS(on)4 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Ratings min typ max --12 V --0.3 --10 μA ±10 μA --0.8 5.3 ID=--50mA, VGS=--0.9V VDS=--6V, f=1MHz Unit V S 57 69 mΩ 75 98 mΩ 115 173 mΩ 250 500 mΩ 1010 pF VDS=--6V, f=1MHz VDS=--6V, f=1MHz 130 pF 85 pF See specified Test Circuit. 9.9 ns Rise Time td(on) tr See specified Test Circuit. 49 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 109 ns Fall Time tf Qg See specified Test Circuit. 65 ns VDS=--6V, VGS=--2.5V, ID=--3.5A VDS=--6V, VGS=--2.5V, ID=--3.5A 6.2 nC 1.6 nC Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, VGS=--2.5V, ID=--3.5A IS=--3.5A, VGS=0V 1.1 --0.83 nC --1.2 V Switching Time Test Circuit 0V --2.5V VDD= --6V VIN ID= --1.5A RL=4Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω MCH3383 S Ordering Information Device MCH3383-TL-H Package Shipping memo MCPH3 3,000pcs./reel Pb Free and Halogen Free No.9000-2/7 MCH3383 ID -- VDS V --2.0 --1.5 --1.0V --1.0 --0.9V VGS= --0.8V --0.5 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --1.5A 250 200 150 100 50 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT16290 RDS(on) -- Ta --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 200 150 3A 2V, I D= --0. V GS= --1. , I = --0.7A VGS= --1.8V D 100 = --1.5A VGS= --2.5V, ID 50 0 --25 --5.0 VGS= --0.9V, I = --5 0mA D 250 0 25 | yfs | -- ID 50 75 100 125 150 Ambient Temperature, Ta -- °C IT16291 5 175 IT16292 IS -- VSD --10 7 5 VDS= --10V VGS=0V 3 2 1.0 7 5 3 2 --1.0 7 5 3 5°C = Ta 2 --0.1 7 5 25°C °C 25 °C 75 3 Ta= 7 0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --0.2 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.7A 300 Gate-to-Source Voltage, VGS -- V 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A RDS(on) -- ID 500 5 7 --10 IT16293 --0.01 400 VGS= --0.9V 300 250 200 150 --1.2V 100 --1.8V 50 0 --0.01 --2.5V 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A --0.2 --0.4 2 3 5 7 --10 IT16295 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 IT16294 SW Time -- ID 1000 7 5 450 350 0 Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 300 --0.3A 350 7 0 --0.9 --1.0 ID= --50mA 400 10 --1 Ta=25°C 450 0 --2 IT16289 RDS(on) -- VGS 500 --3 Ta= 75° C 25° C --2.5 0 VDS= --10V --1 .4 --1.2V --3.0 0 ID -- VGS --4 Drain Current, ID -- A Drain Current, ID -- A --3.5 --2.5 V --1. 8V --4.5V --4.0 VDD= --6V VGS= --2.5V 3 2 td(off) 100 7 5 tf tr 3 2 td(on) 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT16296 No.9000-3/7 MCH3383 Ciss, Coss, Crss -- VDS 10000 7 5 Gate-to-Source Voltage, VGS -- V 3 Ciss, Coss, Crss -- pF 2 Ciss 1000 7 5 3 2 Coss Crss 100 7 5 3 2 10 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --14A (PW≤10μs) ID= --3.5A DC --1.0 --0.5 0 1 2 1m 100 μs s op 10 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16299 3 4 5 Total Gate Charge, Qg -- nC PD -- Ta 1.2 is limited by RDS(on). 5 7--0.1 2 3 --1.5 IT16297 ms era 100 tio ms n( Ta =2 5° C) Operation in this area --0.01 --0.01 2 3 VDS= --6V ID= --3.5A --2.0 0 --12 Allowable Power Dissipation, PD -- W Drain Current, ID -- A --100 7 5 3 2 VGS -- Qg --2.5 f=1MHz 6 7 IT16298 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16300 No.9000-4/7 MCH3383 Taping Specification MCH3383-TL-H No.9000-5/7 MCH3383 Outline Drawing MCH3383-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.9000-6/7 MCH3383 Note on usage : Since the MCH3383 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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