ECH8654 Ordering number : ENA0981B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature PT Tch Storage Temperature Tstg A A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C Product & Package Information • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8654-TL-H 0.25 Packing Type : TL 0.15 8 V --5 unit : mm (typ) 7011A-001 2.9 V ±10 --40 PW≤10μs, duty cycle≤1% Package Dimensions Top View Unit --20 Marking WZ 5 2.3 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.9 0.25 LOT No. TL 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://www.sanyosemi.com/en/network/ 91212 TKIM/62012 TKIM/N1407PE TIIM TC-00001014 No. A0981-1/7 ECH8654 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --20 V --0.4 4.9 --1 μA ±10 μA --1.3 8.3 V S 29 38 mΩ 41 58 mΩ 64 98 mΩ 960 pF 180 pF Crss 140 pF Turn-ON Delay Time td(on) 14 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 92 ns Fall Time tf 68 ns Total Gate Charge Qg 11 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--5A IS=--5A, VGS=0V 2.0 nC 2.8 nC --0.82 --1.2 V Switching Time Test Circuit VDD= --10V VIN 0V --4V ID= --3A RL=3.33Ω VOUT VIN D PW=10μs D.C.≤1% G ECH8654 P.G 50Ω S Ordering Information Device ECH8654-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A0981-2/7 ECH8654 ID -- VDS V --1. 8V VGS= --10V --7 --1.5V --2 --5 --4 --3 --2 --1 C --25°C --3 --6 Ta= 75° C Drain Current, ID -- A --2.5V --4.5V --8.0V Drain Current, ID -- A --4 ID -- VGS --8 --2.0 --5 0 25° --1 VGS= --1.2V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 0 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 140 --0.5 IT13073 IT13074 RDS(on) -- Ta 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 --1.5A --3.0A 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 2 C 5° 1.0 2 7 5 3 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 20 40 60 80 100 120 140 160 IT13076 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 0 5 7 --10 IT13077 5 2 td(off) 100 tf 7 5 3 tr 2 --0.6 --0.8 --1.0 --1.2 IT13078 f=1MHz 2 Ciss, Coss, Crss -- pF 3 --0.4 Ciss, Coss, Crss -- VDS 3 VDD= --10V VGS= --4V 7 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 Switching Time, SW Time -- ns --20 --0.01 2 Drain Current, ID -- A 10 7 --0.01 --40 3 2 2 0.1 --0.01 20 --10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S °C -25 = °C Ta 75 3 40 Ambient Temperature, Ta -- °C 10 7 5 --0.5A --1.5A , I D= --2.5V = V GS --3.0A V, I D= .5 4 -V GS= 0 --60 --8 VDS= --10V 2 60 IT13075 | yfs | -- ID 3 ,I = --1.8V D V GS= °C 25°C --25° C ID= --0.5A 80 80 Ta= 75 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 120 Ciss 1000 7 5 3 Coss Crss 2 td(on) 100 7 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT13079 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13080 No. A0981-3/7 ECH8654 VGS -- Qg --100 7 5 3 2 VDS= --10V ID= --5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 10 11 IT13081 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 9 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO PW≤10μs 10 0 1m μs s IDP= --40A 10 ms 10 0 m op s era tio n( Ta =2 5° Operation in this C) area is limited by RDS(on). ID= --5A DC Ta=25°C Single pulse Mounted on a ceramic board (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13082 Mounted on a ceramic board (900mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To tal Di ss ip 1u ati nit on 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13083 No. A0981-4/7 ECH8654 Embossed Taping Specification ECH8654-TL-H No. A0981-5/7 ECH8654 Outline Drawing ECH8654-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A0981-6/7 ECH8654 Note on usage : Since the ECH8654 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No. A0981-7/7