MCH6336 Ordering number : ENA0958A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6336 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --12 V ±10 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) --5 A --20 A Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 0.15 4 1 2 0.3 0.85 1 6 2 5 3 4 YK TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6336-TL-E MCH6336-TL-H 0 t o 0.02 2.1 1.6 0.25 Package Dimensions Electrical Connection 1, 2, 5, 6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 3 SANYO : MCPH6 4 http://semicon.sanyo.com/en/network 61312 TKIM/13008PE TIIM TC-00001168 No. A0958-1/7 MCH6336 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V --12 VDS=--6V, ID=--1mA VDS=--6V, ID=--3A --0.4 4.8 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V typ Unit max V --10 μA ±10 μA --1.4 8.1 V S 33 43 mΩ 47 66 mΩ 68 98 mΩ 660 pF 210 pF Crss 155 pF Turn-ON Delay Time td(on) 7.4 ns Rise Time tr 57 ns Turn-OFF Delay Time td(off) 72 ns Fall Time tf 69 ns Total Gate Charge Qg 6.9 nC Gate-to-Source Charge Qgs 1.2 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--5A 1.8 IS=--5A, VGS=0V --0.83 nC --1.2 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VIN D VOUT PW=10μs D.C.≤1% G MCH6336 P.G 50Ω S Ordering Information Package Shipping memo MCH6336-TL-E Device MCPH6 3,000pcs./reel Pb Free MCH6336-TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free No. A0958-2/7 MCH6336 ID -- VDS --5 --2 --4 --3 --2 --25°C Drain Current, ID -- A --1.5V Ta=7 5°C V --1 --2.5 VDS= --6V --3.0 V --4.5V --3 --8.0V Drain Current, ID -- A --4 ID -- VGS --6 .8 V --5 --1 25°C --1 VGS= --1.0V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 80 ID= --0.5A --1.5A 60 --3.0A 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V = Ta 2 5°C --2 75 °C °C 25 1.0 7 5 2 --40 --20 0 20 40 60 80 100 120 140 160 IT12990 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 0 5 7 --10 IT12991 --0.4 --0.6 --0.8 --1.0 --1.2 IT12992 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 7 5 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 20 --0.01 7 5 3 2 3 0.1 --0.01 40 --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 60 Ambient Temperature, Ta -- °C 10 7 5 --2.5 IT12988 5A = --0. 8V, I D . 1 -= VGS --1.5A , I D= --2.5V = V GS .0A I = --3 --4.5V, D V GS= 80 0 --60 --8 VDS= --6V 2 --2.0 100 IT12989 | yfs | -- ID 3 --1.5 RDS(on) -- Ta 120 Ta=25°C 140 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 160 --0.5 IT12987 Ta= 75° C 25°C --25° C 0 td(off) 100 7 5 tf 3 2 tr 10 td(on) 7 Ciss 7 5 3 Coss Crss 2 100 5 3 --0.01 1000 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12993 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12994 No. A0958-3/7 MCH6336 VGS -- Qg 5 3 2 VDS= --6V ID= --5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 7 IT12995 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 6 --10 7 5 ASO IDP= --20A ID= --5A DC 3 2 op 0m s n( Ta =2 5 tio --1.0 7 5 3 2 --0.1 7 5 3 2 10 era PW≤10μs 10 0μ 1m s 10 s ms Operation in this area is limited by RDS(on). °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12996 When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12997 No. A0958-4/7 MCH6336 Taping Specification MCH6336-TL-E, MCH6336-TL-H No. A0958-5/7 MCH6336 Outline Drawing MCH6336-TL-E, MCH6336-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A0958-6/7 MCH6336 Note on usage : Since the MCH6336 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A0958-7/7