SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. ESD Protected. SOP-8 B PRODUCT SUMMARY PRODUCT SUMMARY RDS(on) m( 8.5@VGS= -10V 13@VGS= -4.5V VDSS(V) -30 ID(A) L D M -14 A C N J MARKING H D D D D 8 7 6 5 REF. STM4639 A B C D E F G = Date Code 1 2 3 4 S S S G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID @ TA = 25°C -14 A ID @ TA = 70°C -11.2 A Continuous Drain Current a Pulsed Drain Current b Single Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction & Storage Temperature Range IDM -79 A EAS 180 mJ PD @ TA = 25°C 2.5 W PD @ TA = 70°C 1.6 W TJ, TSTG -55 ~ 150 °C 50 °C / W THERMAL RESISTANCE RATINGS Thermal Resistance Junction-ambient a http://www.SeCoSGmbH.com/ 13-May-2010 Rev. B RθJA Any changes of specification will not be informed individually. Page 1 of 5 SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0V, ID=250μA Zero Gate Voltage Drain Current IDSS - Gate-Body Leakage Current IGSS - - -1 μA VDS= -24V, VGS=0V - ±10 μA VGS=±20V, VDS=0V V VDS= VGS, ID=-250μA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance gfs -0.8 -1.7 -2.0 - 7 8.5 - 9.8 13 - 32 - DYNAMIC CHARACTERISTICS Input Capacitance CISS - 4049 - Output Capacitance COSS - 641 - Reverse Transfer Capacitance CRSS - 351 - mΩ VGS=-10V, ID=-14A VGS=-4.5V, ID=-11.3A S VDS=-10V, ID=-14A pF VDS=-15V, VGS=0V, f=1.0MHz nS VDD=-15V ID=-1A VGS=-10V RGEN=3Ω C SWITCHING CHARACTERISTICS C Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) - 24 - Tr - 68 - Td(off) - 484 - Tf - 188 - - 95 - Total Gate Charge Qg - 40 - Gate-Source Charge Qgs - 6 - Gate-Drain Charge Qgd - 23 - VDS=-15V, ID=-14A, VGS=-10V nC VDS=-15V, ID=-14A, VGS=-4.5V VDS=-15V, ID=-14A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuius Drain-Source Diode Forward Current Diode Forward Voltage b IS - - -2.0 A VSD - -0.7 -1.2 V VGS=0V, IS=-2.0A Notes a. Surface Mounted on FR4 Board, t ≦ 10 sec. b. Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2％. c. Guaranteed by design, not subject to production testing. d. Starting TJ=25°C, L=3.0mH, VDD=30V, VGS=10V. (See Figure13) http://www.SeCoSGmbH.com/ 13-May-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 5 SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 13-May-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 5 SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 13-May-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 5 SSG4639STM Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 13-May-2010 Rev. B Any changes of specification will not be informed individually. Page 5 of 5