MMBTSA1256 PNP Silicon Epitaxial Planar Transistor for use in FM RF amplifier, mixer, oscillators, converters and IF amplifiers applications The transistor is subdivided into three groups, R, Q and Y according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 30 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS - 55 to + 125 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE hFE 60 90 135 - 120 180 270 - Collector Cutoff Current at -VCB = 10 V -ICBO - - 0.1 µA Emitter Cutoff Current at -VEB = 4 V -IEBO - - 0.1 µA fT 150 230 - MHz Cre - - 1.7 pF NF - 2.5 - dB DC Current Gain at -VCE = 6 V, -IC = 1 mA Current Gain Group Transition Frequency at -VCE = 6 V, -IC = 1 mA Reverse Transfer Capacitance at -VCB = 6 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 1 mA, f = 100 MHz R Q Y SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/08/2006 MMBTSA1256 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/08/2006