AO4720 30V N-Channel MOSFET General Description SRFET TM The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Features VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11mΩ (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 4.5V) D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Max 30 Units V Gate-Source Voltage VGS ±20 V TA=25°C Continuous Drain Current AF 13 TA=70°C Pulsed Drain Current B 11 A A IDM 120 C IAR 21 A Repetitive avalanche energy L=0.3mH C TA=25°C EAR 66 mJ Avalanche Current Power Dissipation 1/6 IDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State 3.1 PDSM RθJA RθJL W 2 -55 to 150 Typ 32 60 17 Max 40 75 24 °C Units °C/W °C/W °C/W www.freescale.net.cn AO4720 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 120 TJ=125°C VGS=10V, ID=13A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=11A gFS Forward Transconductance VDS=5V, ID=13A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ 20 0.1 µA 1.62 2 V 9.3 11.0 13.8 17.3 14 17.5 A mΩ mΩ 37 0.40 1267 VGS=0V, VDS=15V, f=1MHz mA S 0.5 V 5 A 1600 pF 308 pF 118 pF 1.3 2.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 21 30 nC Qg(4.5V) Total Gate Charge 10.4 14 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=13A 3.0 nC 3.6 nC 5.2 ns VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 3.8 ns 21.2 ns 4.4 ns IF=13A, dI/dt=300A/µs 11.2 Body Diode Reverse Recovery Charge IF=13A, dI/dt=300A/µs 10.5 17 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev4: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AO4720 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V 6V 80 5V 60 4.5V 40 VDS=5V 25 7V 20 ID(A) ID (A) 100 15 125° 10 4V 25°C 20 5 VGS=3.5V 0 0 0 1 2 3 4 5 1 2 VDS (Volts) 4 5 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 18 Normalized On-Resistance 1.8 16 VGS=4.5V RDS(ON) (mΩ ) 3 14 12 VGS=10V 10 8 6 VGS=10V 1.6 ID=13A 1.4 VGS=4.5V 1.2 ID=11A 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 ID=13A 1.0E+01 125°C 25 20 125°C IS (A) RDS(ON) (mΩ ) 1.0E+00 15 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 25°C 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4720 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 1600 VDS=15V ID=13A 6 Capacitance (pF) VGS (Volts) 8 4 Ciss 1200 800 2 Coss 400 Crss 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 1000.0 RDS(ON) limited 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1ms 1.0 100µ 10ms 1s TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 80 10µs 10.0 0.1 10 100 Power (W) ID (Amps) 100.0 5 60 40 10s DC 20 0.0 0.1 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4/6 www.freescale.net.cn AO4720 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AO4720 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1.2 1 VDS=24V 20A VSD(V) IR (A) 0.8 VDS=12V 0.6 10A 5A 0.4 0.2 1.0E-02 0 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 8 di/dt=800A/us 2.5 Irm trr (ns) 4 Irm (A) 125ºC di/dt=800A/us 12 25ºC Qrr 10 2 3 4 5 6 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 15 6 15 1 125ºC 20 Qrr (nC) 0 2 125ºC 9 1.5 trr S 0 DYNAMIC IS=1A 25ºC 6 1 25ºC 25ºC 2 5 S 3 0.5 125ºC 0 0 0 5 10 15 20 25 10 125ºC 7 6 5 125º 10 25ºC 5 Qrr 4 3 0 0 200 400 600 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt 6/6 25 30 2.5 25ºC 2 9 trr 25ºC 6 1.5 1 2 1 Irm 20 Is=20A 125ºC 12 trr (ns) Qrr (nC) 25ºC 15 15 3 15 8 Is=20A 10 18 9 Irm (A) 20 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 0 0 30 S 0 3 S 125ºC 0 0 200 400 600 800 0.5 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.freescale.net.cn