AO6432 30V N-Channel MOSFET General Description The AO6432 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. VDS (V) = 30V ID = 7.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) D Top View D 1 6 D D 2 5 D G 3 4 S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain A,F Current Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead 1/5 C ±20 V ID 6.0 IDM 38 W 1.28 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2.0 PD TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Units V 7.5 TA=70°C TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 48 74 54 °C Max 62.5 110 68 Units °C/W °C/W °C/W www.freescale.net.cn AO6432 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 On state drain current VGS=10V, VDS=5V 38 TJ=55°C VGS=10V, ID=7.5A 5 100 nA 2.6 V 17.3 24 25 34 35 A Static Drain-Source On-Resistance VGS=4.5V, ID=5.6A 25 gFS Forward Transconductance VDS=5V, ID=7.5A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.75 373 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=7.5A µA 2.1 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current Crss Max 30 IDSS ID(ON) Typ mΩ mΩ S 1 V 2.5 A 448 pF 67 pF 41 pF 2 2.8 Ω 7.2 11 nC 3.5 5 nC 1.3 nC Qgd Gate Drain Charge 1.7 tD(on) Turn-On DelayTime 4.5 6.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr nC ns VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω 2.7 4.5 ns 14.9 23 ns 2.9 5.5 ns IF=7.5A, dI/dt=100A/µs 10.5 12.6 Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs 4.5 5.4 ns nC Turn-Off Fall Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: May. 2012 2/5 www.freescale.net.cn AO6432 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V 6V 50 VDS=5V 12 VDS=5V 9 4.5V ID(A) ID (A) 40 30 6 20 VGS=3.5V 3 10 0 25° 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance VGS=4.5V 35 RDS(ON) (mΩ Ω) 2.5 3 1.8 40 30 25 20 15 1.6 VGS=10V Id=7.5A 5 10 15 4 4.5 20 67 41 1.2 1.8 1.2 1 VGS=4.5V Id=5.6A 4.5 0.8 0.6 0 3.5 11 5 1.4 VGS=10V 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 23 5.5 75 10.5 100 125 12.6 150 4.5 Temperature (°C) 5.4 175 Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=7.5A 1.0E+00 1.0E-01 40 125°C IS (A) RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics 45 50 25°C 125°C 125°C 125°C 1.0E-02 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 25°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics 3/5 www.freescale.net.cn AO6432 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=7.5A 500 Capacitance (pF) VGS (Volts) 8 6 4 300 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100.0 100µs 1.0 1ms 10ms 0.1 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=150°C TA=25°C RDS(ON) limited TJ(Max)=150°C TA=25°C 0.1s DC Power (W) 10.0 5 30 10µs ID (Amps) Coss 200 2 20 10 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance Ciss 400 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 4/5 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn AO6432 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 Isd L + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn