SHENZHENFREESCALE AO6432

AO6432
30V N-Channel MOSFET
General Description
The AO6432 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used to bypass the source inductance.
VDS (V) = 30V
ID = 7.5A
(VGS = 10V)
RDS(ON) < 24mΩ
(VGS = 10V)
RDS(ON) < 35mΩ
(VGS = 4.5V)
D
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
A,F
Current
Pulsed Drain Current
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead
1/5
C
±20
V
ID
6.0
IDM
38
W
1.28
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
2.0
PD
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Units
V
7.5
TA=70°C
TA=25°C
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
48
74
54
°C
Max
62.5
110
68
Units
°C/W
°C/W
°C/W
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AO6432
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
On state drain current
VGS=10V, VDS=5V
38
TJ=55°C
VGS=10V, ID=7.5A
5
100
nA
2.6
V
17.3
24
25
34
35
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.6A
25
gFS
Forward Transconductance
VDS=5V, ID=7.5A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
0.75
373
VGS=0V, VDS=15V, f=1MHz
VGS=10V, VDS=15V, ID=7.5A
µA
2.1
RDS(ON)
TJ=125°C
Units
V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
Crss
Max
30
IDSS
ID(ON)
Typ
mΩ
mΩ
S
1
V
2.5
A
448
pF
67
pF
41
pF
2
2.8
Ω
7.2
11
nC
3.5
5
nC
1.3
nC
Qgd
Gate Drain Charge
1.7
tD(on)
Turn-On DelayTime
4.5
6.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
Qrr
nC
ns
VGS=10V, VDS=15V, RL=2Ω,
RGEN=3Ω
2.7
4.5
ns
14.9
23
ns
2.9
5.5
ns
IF=7.5A, dI/dt=100A/µs
10.5
12.6
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs
4.5
5.4
ns
nC
Turn-Off Fall Time
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev0: May. 2012
2/5
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AO6432
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
15
10V
6V
50
VDS=5V
12
VDS=5V
9
4.5V
ID(A)
ID (A)
40
30
6
20
VGS=3.5V
3
10
0
25°
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
Normalized On-Resistance
VGS=4.5V
35
RDS(ON) (mΩ
Ω)
2.5
3
1.8
40
30
25
20
15
1.6
VGS=10V
Id=7.5A
5
10
15
4
4.5
20
67
41
1.2
1.8
1.2
1
VGS=4.5V
Id=5.6A 4.5
0.8
0.6
0
3.5
11
5
1.4
VGS=10V
10
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
23
5.5
75 10.5
100
125 12.6
150
4.5
Temperature
(°C) 5.4
175
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
ID=7.5A
1.0E+00
1.0E-01
40
125°C
IS (A)
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics
45
50
25°C
125°C 125°C
125°C
1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-03
25°C
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY
LIABILITY ARISING
20
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
3/5
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AO6432
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
10
VDS=15V
ID=7.5A
500
Capacitance (pF)
VGS (Volts)
8
6
4
300
100
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
100.0
100µs
1.0
1ms
10ms
0.1
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
0.1s
DC
Power (W)
10.0
5
30
10µs
ID (Amps)
Coss
200
2
20
10
10s
0
0.0
0.01
0.1
1
VDS (Volts)
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
Ciss
400
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
4/5
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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AO6432
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
5/5
Isd
L
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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