AO4450 40V N-Channel MOSFET General Description The AO4450 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS 40V ID (at VGS=10V) 7A RDS(ON) (at VGS=10V) < 30mΩ RDS(ON) (at VGS=4.5V) < 38mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 45 IAS 14 A 10 mJ 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V 5.5 PD Junction and Storage Temperature Range ±20 IDM EAS TA=70°C Units V 7 ID TA=70°C C Maximum 40 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4450 40V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 45 TJ=55°C 5 ±100 nA 3 V 24 30 36 45 VGS=4.5V, ID=5A 30 38 mΩ 1 V 3.5 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=7A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 2.5 VGS=10V, ID=7A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ mΩ S 516 pF VGS=0V, VDS=20V, f=1MHz 82 pF 43 pF VGS=0V, VDS=0V, f=1MHz 4.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8.9 13 nC Qg(4.5V) Total Gate Charge 4.3 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=20V, ID=7A 2.4 nC 1.4 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs 10 VGS=10V, VDS=20V, RL=2.8Ω, RGEN=3Ω 6.4 ns 3.6 ns 16.2 ns 6.6 ns 18 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO4450 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 10V 5V 30 20 ID(A) 30 ID (A) VDS=5V 4.5V 4V 20 125°C 10 10 VGS=3.5V 25°C 0 0 0 1 2 3 4 1 5 40 3 4 5 Normalized On-Resistance 2.2 35 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 30 25 VGS=10V 2 VGS=10V ID=7A 1.8 17 5 2 VGS=4.5V 10 1.6 1.4 1.2 ID=5A 1 0.8 20 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 80 1.0E+02 ID=7A 1.0E+01 70 40 1.0E+00 50 125°C 40 1.0E-02 30 1.0E-04 20 1.0E-05 2 125°C 1.0E-01 1.0E-03 25°C 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 IS (A) RDS(ON) (mΩ Ω) 60 4 25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4450 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=20V ID=7A 700 8 Capacitance (pF) VGS (Volts) 600 6 4 Ciss 500 400 300 200 Coss 2 100 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 100.0 0 5 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 10000 TA=25°C 1.0 100µs 1000 1ms Power (W) RDS(ON) limited 10.0 ID (Amps) 10µs 10ms TJ(Max)=150°C TA=25°C 0.1 10s 100 10 DC 0.0 1 0.01 VDS 1 (Volts) 0.1 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 4/5 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AO4450 40V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 5/5 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn