SHENZHENFREESCALE AO4476A

AO4476A
30V N-Channel MOSFET
General Description
The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R DS(ON). This device is suitable for use as a high side switch in SMPS and general purpose
applications.
Features
VDS
ID (at VGS=10V)
30V
15A
RDS(ON) (at VGS=10V)
< 7.7mΩ
RDS(ON) (at VGS = 4.5V)
< 10.8mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
±20
V
12
A
IDM
110
Avalanche Current C
IAS, IAR
27
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
36
mJ
Pulsed Drain Current
Power Dissipation B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
3.1
PD
TA=70°C
Junction and Storage Temperature Range
1/6
Units
V
15
ID
TA=70°C
Maximum
30
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4476A
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
110
TJ=55°C
5
100
nA
2.5
V
6.4
7.7
10
12
VGS=4.5V, ID=12A
8.6
10.8
mΩ
45
1
V
4
A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=15A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
1.98
VGS=10V, ID=15A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
A
0.74
mΩ
S
920
1150
1380
pF
VGS=0V, VDS=15V, f=1MHz
125
180
235
pF
60
105
150
pF
VGS=0V, VDS=0V, f=1MHz
0.55
1.1
1.65
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
20
24
nC
Qg(4.5V) Total Gate Charge
7.6
9.5
11.4
nC
2
2.7
3.2
nC
3
5
7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=15A
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
6.5
ns
2
ns
17
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=15A, dI/dt=500A/µs
7
3.5
8.7
10.5
ns
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs
11
13.5
16
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AO4476A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
110
10V
100
5V
VDS=5V
90
70
80
60
4V
60
ID(A)
ID (A)
4.5V
6V
80
50
40
40
3.5V
30
125°C
10
VGS=3V
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
0.5
5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
10
Normalized On-Resistance
12
RDS(ON) (mΩ
Ω)
25°C
20
20
VGS=4.5V
8
6
VGS=10V
4
2
VGS=10V
ID=15A
1.6
1.4
17
5
VGS=4.5V
ID=12A 2
10
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=15A
1.0E+01
20
40
15
125°C
10
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
5
25°C
1.0E-05
0
2
3/6
1.0E-04
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4476A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
10
VDS=15V
ID=15A
8
1400
Ciss
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
400
2
Coss
200
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
70
TA=25°C
60
100.0
50
TA=150°C
TA=100°C
40
30
ID (Amps)
IAR (A) Peak Avalanche Current
Crss
0
0
10.0
10µs
RDS(ON)
limited
100µs
1ms
1.0
10ms
20
TA=125°C
TJ(Max)=150°C
TA=25°C
0.1
10
10s
DC
0.0
0
0.01
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note
C)
0.1
1
10
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
100
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
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AO4476A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
5/6
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AO4476A
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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