AO4476A 30V N-Channel MOSFET General Description The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS ID (at VGS=10V) 30V 15A RDS(ON) (at VGS=10V) < 7.7mΩ RDS(ON) (at VGS = 4.5V) < 10.8mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C ±20 V 12 A IDM 110 Avalanche Current C IAS, IAR 27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 36 mJ Pulsed Drain Current Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 3.1 PD TA=70°C Junction and Storage Temperature Range 1/6 Units V 15 ID TA=70°C Maximum 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4476A 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 110 TJ=55°C 5 100 nA 2.5 V 6.4 7.7 10 12 VGS=4.5V, ID=12A 8.6 10.8 mΩ 45 1 V 4 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=15A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.98 VGS=10V, ID=15A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ A 0.74 mΩ S 920 1150 1380 pF VGS=0V, VDS=15V, f=1MHz 125 180 235 pF 60 105 150 pF VGS=0V, VDS=0V, f=1MHz 0.55 1.1 1.65 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC 2 2.7 3.2 nC 3 5 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=15A VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω 6.5 ns 2 ns 17 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=15A, dI/dt=500A/µs 7 3.5 8.7 10.5 ns Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs 11 13.5 16 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AO4476A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 110 10V 100 5V VDS=5V 90 70 80 60 4V 60 ID(A) ID (A) 4.5V 6V 80 50 40 40 3.5V 30 125°C 10 VGS=3V 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 10 Normalized On-Resistance 12 RDS(ON) (mΩ Ω) 25°C 20 20 VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=15A 1.6 1.4 17 5 VGS=4.5V ID=12A 2 10 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=15A 1.0E+01 20 40 15 125°C 10 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 5 25°C 1.0E-05 0 2 3/6 1.0E-04 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4476A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 10 VDS=15V ID=15A 8 1400 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 Coss 200 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 70 TA=25°C 60 100.0 50 TA=150°C TA=100°C 40 30 ID (Amps) IAR (A) Peak Avalanche Current Crss 0 0 10.0 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 20 TA=125°C TJ(Max)=150°C TA=25°C 0.1 10 10s DC 0.0 0 0.01 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4476A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4476A 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn