AO4452 100V N-Channel MOSFET General Description The AO4452 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS 100V ID (at VGS=10V) 8A RDS(ON) (at VGS=10V) < 25mΩ RDS(ON) (at VGS = 7V) < 31mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C ±25 V 6.5 A IDM 57 Avalanche Current C IAR 28 A Repetitive avalanche energy L=0.1mH C TA=25°C EAR 39 mJ Pulsed Drain Current Power Dissipation B TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/6 Units V 8 ID TA=70°C Maximum 100 3.1 PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4452 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 100 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 60 TJ=55°C 50 nA 4 V 20.5 25 36 43 VGS=7V, ID=6.5A 25 31 mΩ 1 V 5 A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=8A 23 VSD Diode Forward Voltage IS=1A,VGS=0V 0.66 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge S 1400 1770 2200 pF 115 165 215 pF 33 55 80 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.65 1.0 Ω 14 28 42 nC 4 9 14 nC 6 10 14 nC VGS=10V, VDS=50V, ID=8A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr 11 16 21 42 60 78 trr IF=8A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs IF=8A, dI/dt=100A/µs Body Diode Reverse Recovery Time 21 27 33 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 20 28 36 Qrr mΩ VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 100 Static Drain-Source On-Resistance Output Capacitance Units 3.2 VGS=10V, ID=8A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=50V, RL=6Ω, RGEN=3Ω 12 ns 4 ns 17 ns 5 ns ns nC ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AO4452 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 8V 10V 50 7V 40 40 30 ID(A) ID (A) VDS=5V 50 6.5V 125°C 30 20 20 25°C 10 10 VGS=6V 0 0 0 1 2 3 4 3 5 5 6 7 2.2 35 VGS=7V 30 25 VGS=10V 20 15 Normalized On On-Resistance 40 RDS(ON) (mΩ Ω) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 VGS=10V ID=8A 1.8 1.6 1.4 1.2 VGS=7V ID=6.5A 1 17 5 2 10 0.8 10 0 6 0 12 18 24 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 0 175 Temperature (°C) 18Temperature Figure 4: On-Resistance vs. Junction (Note E) 45 1.0E+02 ID=8A 1.0E+01 40 125°C 125°C IS (A) RDS(ON) (mΩ Ω) 40 1.0E+00 35 30 1.0E-01 1.0E-02 25 25°C 25°C 1.0E-03 20 1.0E-04 15 6 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 7 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4452 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=50V ID=8A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 1500 1000 Crss 2 500 0 Coss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 IAR (A) Peak Avalanche Current 100 TA=25°C TA=100°C ID (Amps) 100.0 100µs 1.0 1ms TA=150°C TJ(Max)=150°C TA=25°C 0.1 TA=125°C 10µs RDS(ON) limited 10.0 10ms DC 10s 0.0 10 0.01 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4452 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 300 24 15 di/dt=800A/µs 125ºC 250 1.6 125ºC 150 6 trr 25ºC 1.2 trr (ns) 12 S 9 25ºC Irm (A) 16 200 125ºC 20 12 Irm Qrr (nC) 2 di/dt=800A/µs 0.8 8 100 125ºC 3 Qrr 4 25ºC 50 0 0 5 10 15 20 25 25ºC 0 30 0 IS (A) Figure 13: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 150 30 25ºC Irm 0 0 200 400 600 800 125ºC Is=20A S 10 5 -2 0 1000 2 25ºC 15 2 di/dt (A/µ µs) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. di/dt 5/6 3 20 6 30 30 40 10 Qrr 0 25 trr (ns) 14 125ºC 20 IS (A) Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25 22 18 90 15 trr Irm (A) Qrr (nC) 25ºC 10 30 125ºC 120 60 5 26 Is=20A 0.4 S 125ºC 25ºC 1 S 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AO4452 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn