AO4435 30V P-Channel MOSFET General Description The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS = -30V ID = -10.5A (VGS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current Power Dissipation A -30 Units V ±25 V Maximum -10.5 TA=70°C B TA=25°C ID -8 IDM -80 3.1 PD TA=70°C A W 2.0 Avalanche Current B IAR -20 A Repetitive avalanche energy 0.3mH B EAR 60 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 1/5 Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4435 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -30 Gate-Body leakage current VDS = 0V, VGS = ±25V VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -80 VGS = -20V, ID = -11A TJ=125°C 27 36 Maximum Body-Diode Continuous Current mΩ 22 -0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance A VGS = -5V, ID = -5A IS Rg 14 18 IS = -1A,VGS = 0V Output Capacitance 11 15 VDS = -5V, ID = -10A Reverse Transfer Capacitance V 19 Diode Forward Voltage Crss nA -3 15 Forward Transconductance Coss ±100 -2.3 VGS = -10V, ID = -10A gFS µA -5 Gate Threshold Voltage VSD Units -1 TJ = 55°C VGS(th) Static Drain-Source On-Resistance Max V VDS = -30V, VGS = 0V IGSS RDS(ON) Typ 1130 VGS=0V, VDS=-15V, f=1MHz S -1 V -3.5 A 1400 pF 240 pF 155 pF 5.8 8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 24 nC Qg(4.5V) Total Gate Charge 9.5 Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-10A 1 5.5 nC Qgd Gate Drain Charge 3.3 nC tD(on) Turn-On DelayTime 8.7 ns 8.5 ns 18 ns 7 ns VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-10A, dI/dt=100A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 12 Body Diode Reverse Recovery Time 30 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev7: Nov. 2010 2/5 www.freescale.net.cn AO4435 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 VDS= -5V -10V -8V 60 -6V -ID(A) -ID (A) 60 40 40 -4.5V 125°C 20 20 VGS= -4V 25°C 0 0 0 1 2 3 4 5 0 1 40 3 4 5 6 1.6 Normalized On-Resistance VGS=-5V 35 30 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 25 20 VGS=-10V 15 10 VGS=-10V ID=-10A 1.4 VGS=-20V ID=-11A 1.2 1.0 VGS=-5V ID=-5A 0.8 VGS=-20V 5 0.6 0 5 10 15 20 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 55 1E+01 ID=-11A 1E+00 45 35 -IS (A) RDS(ON) (mΩ ) 1E-01 25 125°C 1E-02 25°C 1E-03 125°C 1E-04 15 1E-05 25°C 1E-06 5 2 4 6 8 10 12 14 16 18 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4435 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 -VGS (Volts) Capacitance (pF) VDS=-15V ID=-10A 8 6 4 2 Ciss 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 1000 100 30 TJ(Max)=150°C TA=25°C 10µs 10 100µs 1 1ms 10ms 100ms TJ(Max)=150°C TA=25°C 0.1 Power (W) -ID (Amps) 25 1000 RDS(ON) limited 0.1 1 10 1 0.00001 10 100 -VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.01 Zθ JA Normalized Transient Thermal Resistance 20 -VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4/5 www.freescale.net.cn AO4435 30V P-Channel MOSFET G ate C harge Test C ircuit & W aveform Vgs Qg -10V - - VD C + VD C Qgd Q gs Vds + DUT V gs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn