AO4932 Asymmetric Dual N-Channel MOSFET General Description The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Features FET1(N-Channel) VDS= 30V FET2(N-Channel) 30V ID= 11A (VGS=10V) 8A (VGS=10V) RDS(ON) RDS(ON) < 12.5mΩ (VGS=10V) < 19mΩ (VGS=10V) < 15mΩ (VGS=4.5V) < 23mΩ (VGS=4.5V) SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Top View D2 G2 D2 S2/D1 S2/D1 S2/D1 G1 S1 D1 G1 D2 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max FE1 VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche energy L=0.1mH C TA=25°C ±12 ±20 V 11 8 9 6.5 IDM 60 40 IAS, IAR 15 19 A EAS, EAR 11 18 mJ 2 2 1.3 1.3 PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/9 Units V ID TA=70°C Avalanche Current C Power Dissipation B Max FET2 30 VGS TA=25°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State S2 RθJA RθJL -55 to 150 Typ 48 74 32 A W °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V Typ 30 0.5 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 60 TJ=125°C 500 VGS=10V, ID=11A nA 1.65 2.1 V 10 12.5 15 18 15 A Static Drain-Source On-Resistance VGS=4.5V, ID=9A 12 gFS Forward Transconductance VDS=5V, ID=11A 75 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=11A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs mΩ mΩ S 0.7 V 4 A 930 1170 1400 pF 90 128 170 pF 45 89 125 pF 0.7 1.4 2.1 Ω 16 20 24 nC 7 8.7 10.5 nC VGS=10V, VDS=15V, RL=1.4Ω, RGEN=3Ω 3.2 nC 3 nC 6 ns 2.4 ns 23 ns 4 IF=11A, dI/dt=500A/µs mA 100 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Coss Max ns 5.5 7 8.5 5 6.5 8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/9 www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 35 10V 30 25 2.75V 25 20 ID(A) ID (A) VDS=5V 30 4.5V 3V 2.5V 15 10 20 125°C 15 25°C 10 5 5 VGS=2.25V 0 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ Ω) 2.4 2.7 3 1.8 12 10 VGS=10V 8 6 VGS=10V ID=11A 1.6 1.4 17 VGS=4.5V5 ID=9A 1.2 2 10 1 0.8 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 25 ID=11A 1.0E+01 125°C 40 20 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 2.1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 14 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 25°C 5 1.0E-04 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/9 1.8 4 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=11A 1200 4 900 600 Coss 2 300 0 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 25 100.0 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 100µs 1.0 1ms 10ms 0.1 TA=25°C 10µs RDS(ON) limited 10.0 ID (Amps) Ciss Capacitance (pF) 6 TJ(Max)=150°C TA=25°C DC 100 Power (W) VGS (Volts) 8 10 10s 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 4/9 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-01 0.9 20A 0.8 10A 0.7 1.E-02 VDS=30V IR (A) VSD (V) 0.6 1.E-03 0.5 0.4 5A 0.3 VDS=15V 1.E-04 IS=1A 0.2 0.1 0 1.E-05 0 0 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 12 12 50 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 8 3 di/dt=800A/µs di/dt=800A/µs 10 10 125ºC 2.5 125ºC 6 4 2 S 1.5 125ºC 4 125ºC Irm 4 2 2 0 0 0 5 10 15 20 25 0 0 IS (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 Is=20A 125ºC 8 5 4 125ºC 2 Is=20A 125ºC 25ºC 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt 5/9 30 2.5 2 25ºC 6 trr 125ºC 4 2 Irm 25 8 trr (ns) 4 20 3 10 Irm (A) Qrr (nC) 6 15 12 8 25ºC Qrr 10 IS (A) Figure 15: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 40 6 0.5 0 30 10 1 25ºC 25ºC S 6 Qrr 2 25ºC trr S 2 25ºC 0 1.5 S 6 Irm (A) Qrr (nC) 25ºC trr (ns) 8 8 1 0.5 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 17: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current VGS=4.5V, ID=4A VDS=5V, ID=8A IS=1A,VGS=0V Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 10 µA 1.8 2.4 V 15.5 19 21 25 18.6 23 mΩ 1 V 2.5 A pF 40 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 5 1.2 Units V 1 TJ=125°C Static Drain-Source On-Resistance Max 30 TJ=55°C RDS(ON) Coss Typ A 30 0.75 mΩ S 600 740 888 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC 2 2.5 3 nC 2 3 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 5 ns 3.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 19 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 6/9 www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 4V 25 25 3.5V 5V 20 ID(A) ID (A) 20 3V 15 10 10 VGS=2.5V 5 125°C 5 25°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 15 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 40 ID=8A 1.0E+01 35 40 1.0E+00 25 125°C -IS (A) RDS(ON) (mΩ Ω) 30 1.0E-01 125°C 1.0E-02 20 1.0E-03 15 25°C 10 1.0E-04 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 7/9 25°C 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 800 600 400 Coss 2 200 0 0 Crss 0 3 6 g (nC) 9 12 Q Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TA=25°C 10µs RDS(ON) 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100 Power (W) 10.0 -ID (Amps) 30 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 0.01 PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8/9 www.freescale.net.cn AO4932 Asymmetric Dual N-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 9/9 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn