SHENZHENFREESCALE AON7932

AON7932
30V Dual Asymmetric
N-Channel MOSFET
General Description
The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized MOSFETs in a dual Power DFN3x3A package. The Q1
"High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET use advance trench
technology with a monolithically integrated Schotty to provide excellent RDS(ON) and low gate charge. The
AON7932 is well suited for use in compact DC/DC converter applications.
Features
Q1
Q2
VDS
30V
30V
ID (at VGS=10V)
26A
35A
RDS(ON) (at VGS=10V)
<20mΩ
<12mΩ
RDS(ON) (at VGS = 4.5V)
<30mΩ
<15mΩ
Top View
100% UIS Tested
Bottom View
100% Rg Tested
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Max Q2
Units
V
±20
±12
V
26
35
30
ID
TC=100°C
Pulsed Drain Current C
IDM
TA=25°C
Continuous Drain
Current
Max Q1
IDSM
TA=70°C
16
22
70
110
6.6
8.1
5.3
6.5
A
A
Avalanche Current C
IAS, IAR
18
17
A
Avalanche Energy L=0.1mH C
EAS, EAR
16
14
mJ
23
25
9
10
1.4
1.4
0.9
0.9
TC=25°C
Power Dissipation
B
Power Dissipation
A
PD
TC=100°C
TA=25°C
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
1 / 11
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
-55 to 150
Typ Q1
40
70
4.5
Max Q1
50
90
5.4
Typ Q2
40
70
4.2
W
W
°C
Max Q2
50
90
5
Units
°C/W
°C/W
°C/W
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Max
30
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
Units
V
VDS=30V, VGS=0V
IDSS
TJ=55°C
5
µA
100
nA
1.9
2.4
V
16
20
24
29
VGS=4.5V, ID=5.3A
23
30
mΩ
33
1
V
20
A
VGS=10V, ID=6.6A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=6.6A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
A
0.75
mΩ
S
300
380
460
pF
VGS=0V, VDS=15V, f=1MHz
110
160
210
pF
7
13
22
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.4
6.5
Qg(4.5V) Total Gate Charge
2.3
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=6.6A
VGS=10V, VDS=15V, RL=2.3Ω,
RGEN=3Ω
nC
nC
1.3
nC
1
nC
10
ns
3
ns
15
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=6.6A, dI/dt=500A/µs
6.8
8.5
10.2
Qrr
Body Diode Reverse Recovery Charge IF=6.6A, dI/dt=500A/µs
12.8
16
19.2
5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2 / 11
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
25
VDS=5V
10V
20
7V
15
4.5V
ID(A)
ID (A)
60
40
4V
125°C
10
3.5V
20
5
25°C
VGS=2.5V
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
1.5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
Normalized On-Resistance
30
VGS=4.5V
25
RDS(ON) (mΩ
Ω)
0.5
20
15
VGS=10V
10
VGS=10V
ID=6.6A
1.8
1.6
17
VGS=4.5V
5
ID=5.3A
1.4
2
10
1.2
1
0.8
0
3
6
9
12
15
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
18Temperature
Figure 4: On-Resistance vs. Junction
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
1.0E+02
ID=6.6A
1.0E+01
35
40
1.0E+00
125°C
1.0E-01
25
125°C
20
IS (A)
RDS(ON) (mΩ
Ω)
30
25°C
1.0E-02
1.0E-03
1.0E-04
15
25°C
1.0E-05
10
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3 / 11
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
VDS=15V
ID=6.6A
500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
400
300
100
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
160
100.0
RDS(ON)
limited
10.0
TJ(Max)=150°C
TC=25°C
10µs
100us
1ms
1.0
DC
Power (W)
ID (Amps)
Coss
200
120
TJ(Max)=150°C
TC=25°C
0.1
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.4°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4 / 11
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100.0
TA=100°C
10.0
TA=150°C
TA=125°C
25
20
15
10
5
0
1.0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
10000
30
TA=25°C
25
1000
20
Power (W)
Current rating ID(A)
150
15
17
5
2
10
100
10
10
5
1
0
0
25
50
75
100
125
0.00001
150
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
0 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=90°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5 / 11
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Max
30
0.5
TJ=55°C
500
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.1
ID(ON)
On state drain current
VGS=10V, VDS=5V
110
Units
V
VDS=30V, VGS=0V
IGSS
mA
100
nA
1.6
2.1
V
10
12
15
18
VGS=4.5V, ID=6.5A
12
15
mΩ
50
0.7
V
30
A
VGS=10V, ID=8.1A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=8.1A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
A
0.45
mΩ
S
810
1020
1230
pF
VGS=0V, VDS=15V, f=1MHz
77
111
150
pF
45
75
130
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19
23
Qg(4.5V) Total Gate Charge
9
nC
4
nC
3
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=8.1A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
nC
11
ns
5
ns
29
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8.1A, dI/dt=500A/µs
4
5.4
7
Qrr
Body Diode Reverse Recovery Charge IF=8.1A, dI/dt=500A/µs
4
5.3
7
6
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
6 / 11
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
60
3V
60
125°C
ID(A)
3.5V
ID (A)
80
25°C
40
40
Vgs=2.5V
20
20
0
0
0
1
2
3
4
0
5
20
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
3
4
5
2
16
VGS=4.5V
12
8
VGS=10V
4
VGS=10V
ID=8.1A
1.8
1.6
17
5
2
10
1.4
VGS=4.5V
ID=6.5A
1.2
1
0.8
0
0
3
0
6
9
12
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
ID=8.1A
35
125°C
1.0E+01
40
25
125°C
20
1.0E+00
IS (A)
30
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
25°C
1.0E-01
15
10
1.0E-02
25°C
5
1.0E-03
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
7 / 11
1
4
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=8.1A
1000
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
800
600
400
Crss
200
0
0
0
4
8
12
16
20
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
30
200
1000.0
10µs
100.0
10.0
TJ(Max)=150°C
TC=25°C
160
100µs
RDS(ON)
limited
1ms
DC
1.0
Power (W)
ID (Amps)
Coss
120
TJ(Max)=150°C
TC=25°C
0.1
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5°C/W
40
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
8 / 11
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
IAR (A) Peak Avalanche Current
TA=25°C
Power Dissipation (W)
TA=100°C
10
TA=150°C
TA=125°C
25
20
15
10
5
0
1
0.000001
0.00001
0.0001
0
0.001
25
50
10000
40
1000
75
100
125
150
TA=25°C
Power (W)
Current rating ID(A)
50
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
30
20
17
5
2
10
100
10
10
1
0
0.00001
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
9 / 11
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.9
20A
0.8
1.0E-02
10A
5A
0.7
0.6
IR (A)
VSD (V)
VDS=30V
1.0E-03
1.0E-04
VDS=15V
0.5
0.4
0.3
IS=1A
0.2
1.0E-05
0.1
0
1.0E-06
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
16
150
200
10
4
di/dt=800A/µs
di/dt=800A/µs
3.5
8
8
125ºC
3
25ºC
6
8
4
125ºC
Qrr
trr (ns)
125ºC
Irm (A)
12
Qrr (nC)
100
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
10
2.5
6
trr
25ºC
2
4
1.5
125ºC
4
2
2
Irm
10
15
20
25
0
0
0
30
15
10
15
20
25
30
10
4
Is=20A
Is=20A
3.5
12
125ºC
6
5
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
8
0.5
25ºC
0
5
1
S
25ºC
0
0
50
S
0
8
3
Qrr
125ºC
Irm
3
125ºC
4
1.5
125ºC
S
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
S
2
1
0.5
25ºC
0
200
2.5
6
25ºC
0
0
trr (ns)
6
2
10 / 11
25ºC
9
25ºC
4
Irm (A)
Qrr (nC)
trr
0
2
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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AON7932
30V Dual Asymmetric
N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
11 / 11
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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