AON4605 30V Complementary MOSFET General Description The AON4605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Features N-Channel P-Channel VDS= 30V -30V ID= 4.3A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 110mΩ (VGS=-10V) < 70mΩ (VGS=4.5V) < 180mΩ (VGS=-4.5V) D1 D2 Top View S1 1 8 D1 G1 2 7 D1 S2 G2 3 6 4 5 D2 D2 G1 G2 S1 n-channel S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol Drain-Source Voltage 30 VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/9 Steady-State Steady-State Units V ±20 ±20 V 4.3 -3.4 3.4 -2.7 18 -13 1.9 1.9 1.2 1.2 TJ, TSTG Symbol t ≤ 10s Max p-channel -30 RθJA RθJL -55 to 150 Typ 51.5 82 40 A W °C Max 65 100 50 Units °C/W °C/W °C/W www.freescale.net.cn AON4605 30V Complementary MOSFET N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 18 TJ=55°C 5 VGS=10V, ID=4.3A TJ=125°C VGS=4.5V, ID=2.5A 100 nA 2.5 V 36 50 57 80 48 70 A gFS Forward Transconductance VDS=5V, ID=4.5A 11 Diode Forward Voltage IS=1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 170 VGS=0V, VDS=15V, f=1MHz µA 2 VSD DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 2.5 A 210 35 pF pF 23 pF 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=4.3A 1.7 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=4.3A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=4.3A, dI/dt=100A/µs 2.5 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=3.4Ω, RGEN=3Ω 0.55 nC 1 nC 4.5 ns 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/9 www.freescale.net.cn AON4605 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 VDS=5V 10V 4V 4.5V 12 8 7V 6 ID(A) ID (A) 9 3.5V 4 6 125°C VGS=3V 3 2 25°C 0 0 0 1 2 3 4 1 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 70 Normalized On-Resistance 2 60 RDS(ON) (mΩ ) 2 VGS=4.5V 50 40 VGS=10V 30 1.8 VGS=10V ID=4.5A 1.6 1.4 1.2 VGS=4.5V ID=3A 1 17 5 2 10 0.8 0 2 4 6 8 10 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120 25 50 1.0E+02 ID=4.5A 1.0E+01 100 40 125°C 80 IS (A) RDS(ON) (mΩ ) 1.0E+00 1.0E-01 125°C 1.0E-02 60 1.0E-03 25°C 40 25°C 1.0E-04 20 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/9 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON4605 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=15V ID=4.5A 250 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 200 150 100 Coss 2 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs 100 RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 DC 0.1 1 10 10s 0.0 0.01 Power (W) ID (Amps) 10.0 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 4/9 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AON4605 30V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 5/9 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AON4605 30V Complementary MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-3.4A RDS(ON) -1.4 gFS Forward Transconductance Diode Forward Voltage IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 100 nA -2.4 V 77 110 100 140 125 180 A 6 -0.8 DYNAMIC PARAMETERS Ciss Input Capacitance 197 VGS=0V, VDS=-15V, f=1MHz µA -1.9 -13 VGS=-4.5V, ID=-2A VDS=-5V, ID=-3.4A IS=-1A,VGS=0V Units V -5 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C VSD Coss Typ mΩ mΩ S -1 V -2.5 A 240 42 pF pF 26 37 pF 7.2 11.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.3 5.2 nC Qg(4.5V) Total Gate Charge 2.2 3 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=-15V, ID=-3.4A 3.5 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-3.4A, dI/dt=100A/µs 11.3 Qrr Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs 4.4 Body Diode Reverse Recovery Time VGS=10V, VDS=-15V, RL=4.4Ω, RGEN=3Ω 0.7 nC 1.1 nC 7.5 ns 4.1 ns 11.8 ns 3.8 ns 14 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 6/9 www.freescale.net.cn AON4605 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 -10V VDS=-5V -6V -8V 12 8 -5V 6 -4.5V -ID(A) -ID (A) 9 4 6 125°C -4V 25°C 2 3 VGS=-3.5V 0 0 0 1 2 3 4 0 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 200 Normalized On-Resistance 1.6 180 160 RDS(ON) (mΩ ) 2 VGS=-4.5V 140 120 100 VGS=-10V 80 60 VGS=-10V ID=-3.4A 1.4 17 5 2 VGS=-4.5V 10 I =-2A 1.2 1 D 0.8 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 300 ID=-3.4A 1.0E+01 260 40 1.0E+00 -IS (A) RDS(ON) (mΩ ) 220 125°C 180 1.0E-02 25°C 140 1.0E-03 25°C 100 1.0E-04 60 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 7/9 125°C 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON4605 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=-15V ID=-3.4A 250 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 200 150 100 Coss 2 50 0 0 Crss 0 1 2 Q (nC) 3 4 g Figure 7: Gate-Charge Characteristics 0 5 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs 100 RDS(ON) limited 1.0 100µs 1ms DC 10ms Power (W) -ID (Amps) 10.0 10 0.1 TJ(Max)=150°C TA=25°C 10s 0.0 0.01 0.1 1 10 100 1 0.00001 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8/9 www.freescale.net.cn AON4605 30V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 9/9 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn