SHENZHENFREESCALE AON4605

AON4605
30V Complementary MOSFET
General Description
The AON4605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Features
N-Channel
P-Channel
VDS= 30V
-30V
ID= 4.3A (VGS=10V)
-3.4A (VGS=-10V)
RDS(ON)
RDS(ON)
< 50mΩ (VGS=10V)
< 110mΩ (VGS=-10V)
< 70mΩ (VGS=4.5V)
< 180mΩ (VGS=-4.5V)
D1
D2
Top View
S1
1
8
D1
G1
2
7
D1
S2
G2
3
6
4
5
D2
D2
G1
G2
S1
n-channel
S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
Drain-Source Voltage
30
VDS
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
ID
TA=70°C
C
IDM
TA=25°C
Power Dissipation B
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/9
Steady-State
Steady-State
Units
V
±20
±20
V
4.3
-3.4
3.4
-2.7
18
-13
1.9
1.9
1.2
1.2
TJ, TSTG
Symbol
t ≤ 10s
Max p-channel
-30
RθJA
RθJL
-55 to 150
Typ
51.5
82
40
A
W
°C
Max
65
100
50
Units
°C/W
°C/W
°C/W
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AON4605
30V Complementary MOSFET
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
18
TJ=55°C
5
VGS=10V, ID=4.3A
TJ=125°C
VGS=4.5V, ID=2.5A
100
nA
2.5
V
36
50
57
80
48
70
A
gFS
Forward Transconductance
VDS=5V, ID=4.5A
11
Diode Forward Voltage
IS=1A,VGS=0V
0.8
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
170
VGS=0V, VDS=15V, f=1MHz
µA
2
VSD
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
mΩ
S
1
V
2.5
A
210
35
pF
pF
23
pF
3.5
5.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
5
nC
Qg(4.5V) Total Gate Charge
2
3
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=4.3A
1.7
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=4.3A, dI/dt=100A/µs
7.5
Qrr
Body Diode Reverse Recovery Charge IF=4.3A, dI/dt=100A/µs
2.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=3.4Ω,
RGEN=3Ω
0.55
nC
1
nC
4.5
ns
1.5
ns
18.5
ns
15.5
ns
10
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
2/9
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AON4605
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
VDS=5V
10V
4V
4.5V
12
8
7V
6
ID(A)
ID (A)
9
3.5V
4
6
125°C
VGS=3V
3
2
25°C
0
0
0
1
2
3
4
1
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
70
Normalized On-Resistance
2
60
RDS(ON) (mΩ )
2
VGS=4.5V
50
40
VGS=10V
30
1.8
VGS=10V
ID=4.5A
1.6
1.4
1.2
VGS=4.5V
ID=3A
1
17
5
2
10
0.8
0
2
4
6
8
10
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
120
25
50
1.0E+02
ID=4.5A
1.0E+01
100
40
125°C
80
IS (A)
RDS(ON) (mΩ )
1.0E+00
1.0E-01
125°C
1.0E-02
60
1.0E-03
25°C
40
25°C
1.0E-04
20
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/9
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON4605
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
10
VDS=15V
ID=4.5A
250
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
200
150
100
Coss
2
50
Crss
0
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
TA=25°C
10µs
100
RDS(ON)
limited
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
DC
0.1
1
10
10s
0.0
0.01
Power (W)
ID (Amps)
10.0
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
4/9
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
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AON4605
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
5/9
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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AON4605
30V Complementary MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
ID(ON)
On state drain current
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3.4A
RDS(ON)
-1.4
gFS
Forward Transconductance
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
100
nA
-2.4
V
77
110
100
140
125
180
A
6
-0.8
DYNAMIC PARAMETERS
Ciss
Input Capacitance
197
VGS=0V, VDS=-15V, f=1MHz
µA
-1.9
-13
VGS=-4.5V, ID=-2A
VDS=-5V, ID=-3.4A
IS=-1A,VGS=0V
Units
V
-5
TJ=125°C
Static Drain-Source On-Resistance
Max
-1
TJ=55°C
VSD
Coss
Typ
mΩ
mΩ
S
-1
V
-2.5
A
240
42
pF
pF
26
37
pF
7.2
11.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.3
5.2
nC
Qg(4.5V) Total Gate Charge
2.2
3
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=-15V, ID=-3.4A
3.5
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-3.4A, dI/dt=100A/µs
11.3
Qrr
Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs
4.4
Body Diode Reverse Recovery Time
VGS=10V, VDS=-15V, RL=4.4Ω,
RGEN=3Ω
0.7
nC
1.1
nC
7.5
ns
4.1
ns
11.8
ns
3.8
ns
14
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
6/9
www.freescale.net.cn
AON4605
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
-10V
VDS=-5V
-6V
-8V
12
8
-5V
6
-4.5V
-ID(A)
-ID (A)
9
4
6
125°C
-4V
25°C
2
3
VGS=-3.5V
0
0
0
1
2
3
4
0
5
1
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
200
Normalized On-Resistance
1.6
180
160
RDS(ON) (mΩ )
2
VGS=-4.5V
140
120
100
VGS=-10V
80
60
VGS=-10V
ID=-3.4A
1.4
17
5
2
VGS=-4.5V
10
I =-2A
1.2
1
D
0.8
0
2
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
300
ID=-3.4A
1.0E+01
260
40
1.0E+00
-IS (A)
RDS(ON) (mΩ )
220
125°C
180
1.0E-02
25°C
140
1.0E-03
25°C
100
1.0E-04
60
1.0E-05
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
7/9
125°C
1.0E-01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON4605
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=-15V
ID=-3.4A
250
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
200
150
100
Coss
2
50
0
0
Crss
0
1
2 Q (nC) 3
4
g
Figure 7: Gate-Charge Characteristics
0
5
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
100
RDS(ON)
limited
1.0
100µs
1ms
DC
10ms
Power (W)
-ID (Amps)
10.0
10
0.1
TJ(Max)=150°C
TA=25°C
10s
0.0
0.01
0.1
1
10
100
1
0.00001
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
8/9
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AON4605
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
9/9
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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